Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial InxGa1 – xN/Si(111) Heterostructures View Full Text


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Article Info

DATE

2018-12-24

AUTHORS

P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, M. A. Kondrashin, A. S. Lenshin, Yu. Yu. Khudyakov, A. M. Mizerov, I. N. Arsentyev, A. N. Beltiukov, Harald Leiste, Monika Rinke

ABSTRACT

Integrated heterostructures exhibiting nanocolumnar morphology of the InxGa1 – xN/Si(111) film are grown on a single-crystal silicon substrate (c-Si(111)) and a substrate with a nanoporous buffer sublayer (por-Si) by molecular-beam epitaxy with the plasma activation of nitrogen. Using a complex of structural and microscopic methods of analysis, it is shown that the growth of InxGa1 – xN nanocolumns on a nanoporous buffer layer offers a number of advantages over growth on c-Si. The por-Si substrate predetermines the preferential orientation of the growth of InxGa1 – xN nanocolumns closer to the Si(111) orientation direction and makes it possible to produce InxGa1 – xN nanocolumns with a higher degree of crystallographic uniformity and with a nanocolumn lateral size of ~40 nm unified over the entire surface. The growth of InxGa1 – xN nanocolumns on a por-Si layer yields a decrease in the strain components εxx and εzz and in the density of edge and screw dislocations compared to the corresponding parameters for InxGa1 – xN nanocolumns grown on c-Si. The InxGa1 – xN nanocolumnar layer fabricated on por-Si exhibits a 20% higher charge-carrier concentration compared to the layer grown on c-Si as well as a higher intensity of the photoluminescence quantum yield (+25%). More... »

PAGES

1653-1661

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s106378261813016x

DOI

http://dx.doi.org/10.1134/s106378261813016x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1110893921


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