Ontology type: schema:ScholarlyArticle
2018-12-24
AUTHORSP. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, M. A. Kondrashin, A. S. Lenshin, Yu. Yu. Khudyakov, A. M. Mizerov, I. N. Arsentyev, A. N. Beltiukov, Harald Leiste, Monika Rinke
ABSTRACTIntegrated heterostructures exhibiting nanocolumnar morphology of the InxGa1 – xN/Si(111) film are grown on a single-crystal silicon substrate (c-Si(111)) and a substrate with a nanoporous buffer sublayer (por-Si) by molecular-beam epitaxy with the plasma activation of nitrogen. Using a complex of structural and microscopic methods of analysis, it is shown that the growth of InxGa1 – xN nanocolumns on a nanoporous buffer layer offers a number of advantages over growth on c-Si. The por-Si substrate predetermines the preferential orientation of the growth of InxGa1 – xN nanocolumns closer to the Si(111) orientation direction and makes it possible to produce InxGa1 – xN nanocolumns with a higher degree of crystallographic uniformity and with a nanocolumn lateral size of ~40 nm unified over the entire surface. The growth of InxGa1 – xN nanocolumns on a por-Si layer yields a decrease in the strain components εxx and εzz and in the density of edge and screw dislocations compared to the corresponding parameters for InxGa1 – xN nanocolumns grown on c-Si. The InxGa1 – xN nanocolumnar layer fabricated on por-Si exhibits a 20% higher charge-carrier concentration compared to the layer grown on c-Si as well as a higher intensity of the photoluminescence quantum yield (+25%). More... »
PAGES1653-1661
http://scigraph.springernature.com/pub.10.1134/s106378261813016x
DOIhttp://dx.doi.org/10.1134/s106378261813016x
DIMENSIONShttps://app.dimensions.ai/details/publication/pub.1110893921
JSON-LD is the canonical representation for SciGraph data.
TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT
[
{
"@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json",
"about": [
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Physical Sciences",
"type": "DefinedTerm"
},
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Condensed Matter Physics",
"type": "DefinedTerm"
},
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Quantum Physics",
"type": "DefinedTerm"
}
],
"author": [
{
"affiliation": {
"alternateName": "Voronezh State University, 394006, Voronezh, Russia",
"id": "http://www.grid.ac/institutes/grid.20567.36",
"name": [
"Voronezh State University, 394006, Voronezh, Russia"
],
"type": "Organization"
},
"familyName": "Seredin",
"givenName": "P. V.",
"id": "sg:person.011470617720.97",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011470617720.97"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Voronezh State University, 394006, Voronezh, Russia",
"id": "http://www.grid.ac/institutes/grid.20567.36",
"name": [
"Voronezh State University, 394006, Voronezh, Russia"
],
"type": "Organization"
},
"familyName": "Goloshchapov",
"givenName": "D. L.",
"id": "sg:person.011402214177.21",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011402214177.21"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Voronezh State University, 394006, Voronezh, Russia",
"id": "http://www.grid.ac/institutes/grid.20567.36",
"name": [
"Voronezh State University, 394006, Voronezh, Russia"
],
"type": "Organization"
},
"familyName": "Zolotukhin",
"givenName": "D. S.",
"id": "sg:person.010550766217.11",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010550766217.11"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Voronezh State University, 394006, Voronezh, Russia",
"id": "http://www.grid.ac/institutes/grid.20567.36",
"name": [
"Voronezh State University, 394006, Voronezh, Russia"
],
"type": "Organization"
},
"familyName": "Kondrashin",
"givenName": "M. A.",
"id": "sg:person.015234152147.36",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015234152147.36"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Voronezh State University, 394006, Voronezh, Russia",
"id": "http://www.grid.ac/institutes/grid.20567.36",
"name": [
"Voronezh State University, 394006, Voronezh, Russia"
],
"type": "Organization"
},
"familyName": "Lenshin",
"givenName": "A. S.",
"id": "sg:person.07357370217.30",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07357370217.30"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Voronezh State University, 394006, Voronezh, Russia",
"id": "http://www.grid.ac/institutes/grid.20567.36",
"name": [
"Voronezh State University, 394006, Voronezh, Russia"
],
"type": "Organization"
},
"familyName": "Khudyakov",
"givenName": "Yu. Yu.",
"id": "sg:person.013514653621.56",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013514653621.56"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.4886.2",
"name": [
"St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Mizerov",
"givenName": "A. M.",
"id": "sg:person.011570622443.35",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011570622443.35"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Institute, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Arsentyev",
"givenName": "I. N.",
"id": "sg:person.014154626406.31",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014154626406.31"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Physical Technical Institute, Ural Branch, Russian Academy of Sciences, 426000, Izhevsk, Russia",
"id": "http://www.grid.ac/institutes/grid.426536.0",
"name": [
"Physical Technical Institute, Ural Branch, Russian Academy of Sciences, 426000, Izhevsk, Russia"
],
"type": "Organization"
},
"familyName": "Beltiukov",
"givenName": "A. N.",
"id": "sg:person.015170317205.05",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015170317205.05"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Karlsruhe Nano Micro Facility, 76344, Eggenstein-Leopoldshafen, Germany",
"id": "http://www.grid.ac/institutes/grid.7892.4",
"name": [
"Karlsruhe Nano Micro Facility, 76344, Eggenstein-Leopoldshafen, Germany"
],
"type": "Organization"
},
"familyName": "Leiste",
"givenName": "Harald",
"id": "sg:person.07703324712.23",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07703324712.23"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Karlsruhe Nano Micro Facility, 76344, Eggenstein-Leopoldshafen, Germany",
"id": "http://www.grid.ac/institutes/grid.7892.4",
"name": [
"Karlsruhe Nano Micro Facility, 76344, Eggenstein-Leopoldshafen, Germany"
],
"type": "Organization"
},
"familyName": "Rinke",
"givenName": "Monika",
"id": "sg:person.015267562567.82",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015267562567.82"
],
"type": "Person"
}
],
"citation": [
{
"id": "sg:pub.10.1134/s106378261301020x",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1013128337",
"https://doi.org/10.1134/s106378261301020x"
],
"type": "CreativeWork"
},
{
"id": "sg:pub.10.1134/s106378261206019x",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1041581815",
"https://doi.org/10.1134/s106378261206019x"
],
"type": "CreativeWork"
},
{
"id": "sg:pub.10.1134/s1063782614080211",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1020148518",
"https://doi.org/10.1134/s1063782614080211"
],
"type": "CreativeWork"
},
{
"id": "sg:pub.10.1134/s1063782613010211",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1000682174",
"https://doi.org/10.1134/s1063782613010211"
],
"type": "CreativeWork"
},
{
"id": "sg:pub.10.1134/s1063782610080270",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1035909446",
"https://doi.org/10.1134/s1063782610080270"
],
"type": "CreativeWork"
},
{
"id": "sg:pub.10.1134/s1063783413100296",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1019850357",
"https://doi.org/10.1134/s1063783413100296"
],
"type": "CreativeWork"
},
{
"id": "sg:pub.10.1134/s1063784214020145",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1042472887",
"https://doi.org/10.1134/s1063784214020145"
],
"type": "CreativeWork"
},
{
"id": "sg:pub.10.1038/s41598-017-15561-9",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1092558590",
"https://doi.org/10.1038/s41598-017-15561-9"
],
"type": "CreativeWork"
},
{
"id": "sg:pub.10.1134/s1027451012090078",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1022768453",
"https://doi.org/10.1134/s1027451012090078"
],
"type": "CreativeWork"
}
],
"datePublished": "2018-12-24",
"datePublishedReg": "2018-12-24",
"description": "Integrated heterostructures exhibiting nanocolumnar morphology of the InxGa1\u00a0\u2013\u00a0xN/Si(111) film are grown on a single-crystal silicon substrate (c-Si(111)) and a substrate with a nanoporous buffer sublayer (por-Si) by molecular-beam epitaxy with the plasma activation of nitrogen. Using a complex of structural and microscopic methods of analysis, it is shown that the growth of InxGa1\u00a0\u2013\u00a0xN nanocolumns on a nanoporous buffer layer offers a number of advantages over growth on c-Si. The por-Si substrate predetermines the preferential orientation of the growth of InxGa1\u00a0\u2013\u00a0xN nanocolumns closer to the Si(111) orientation direction and makes it possible to produce InxGa1\u00a0\u2013\u00a0xN nanocolumns with a higher degree of crystallographic uniformity and with a nanocolumn lateral size of ~40 nm unified over the entire surface. The growth of InxGa1\u00a0\u2013\u00a0xN nanocolumns on a por-Si layer yields a decrease in the strain components \u03b5xx and \u03b5zz and in the density of edge and screw dislocations compared to the corresponding parameters for InxGa1\u00a0\u2013\u00a0xN nanocolumns grown on c-Si. The InxGa1\u00a0\u2013\u00a0xN nanocolumnar layer fabricated on por-Si exhibits a 20% higher charge-carrier concentration compared to the layer grown on c-Si as well as a higher intensity of the photoluminescence quantum yield (+25%).",
"genre": "article",
"id": "sg:pub.10.1134/s106378261813016x",
"inLanguage": "en",
"isAccessibleForFree": false,
"isPartOf": [
{
"id": "sg:journal.1136692",
"issn": [
"1063-7826",
"1090-6479"
],
"name": "Semiconductors",
"publisher": "Pleiades Publishing",
"type": "Periodical"
},
{
"issueNumber": "13",
"type": "PublicationIssue"
},
{
"type": "PublicationVolume",
"volumeNumber": "52"
}
],
"keywords": [
"growth of InxGa1",
"buffer layer",
"single-crystal silicon substrates",
"Si buffer layer",
"high charge carrier concentration",
"por-Si layer",
"integrated heterostructures",
"molecular beam epitaxy",
"InxGa1-xN/",
"buffer sublayer",
"silicon substrate",
"charge carrier concentration",
"crystallographic uniformity",
"nanocolumnar morphology",
"plasma activation",
"por-Si",
"preferential orientation",
"lateral size",
"screw dislocations",
"Si",
"nanocolumns",
"layer",
"entire surface",
"InxGa1",
"heterostructures",
"orientation direction",
"number of advantages",
"photoluminescence quantum yield",
"substrate",
"sublayer",
"epitaxy",
"films",
"\u03b5xx",
"morphology",
"\u03b5zz",
"uniformity",
"surface",
"dislocations",
"high intensity",
"density",
"parameters",
"density of edges",
"microscopic methods",
"advantages",
"high degree",
"edge",
"structure",
"direction",
"orientation",
"method",
"size",
"quantum yield",
"nitrogen",
"growth",
"intensity",
"effect",
"concentration",
"analysis",
"yield",
"decrease",
"degree",
"xn/",
"number",
"complexes",
"activation"
],
"name": "Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial InxGa1 \u2013 xN/Si(111) Heterostructures",
"pagination": "1653-1661",
"productId": [
{
"name": "dimensions_id",
"type": "PropertyValue",
"value": [
"pub.1110893921"
]
},
{
"name": "doi",
"type": "PropertyValue",
"value": [
"10.1134/s106378261813016x"
]
}
],
"sameAs": [
"https://doi.org/10.1134/s106378261813016x",
"https://app.dimensions.ai/details/publication/pub.1110893921"
],
"sdDataset": "articles",
"sdDatePublished": "2022-05-20T07:34",
"sdLicense": "https://scigraph.springernature.com/explorer/license/",
"sdPublisher": {
"name": "Springer Nature - SN SciGraph project",
"type": "Organization"
},
"sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_769.jsonl",
"type": "ScholarlyArticle",
"url": "https://doi.org/10.1134/s106378261813016x"
}
]Download the RDF metadata as: json-ld nt turtle xml License info
JSON-LD is a popular format for linked data which is fully compatible with JSON.
curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s106378261813016x'
N-Triples is a line-based linked data format ideal for batch operations.
curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s106378261813016x'
Turtle is a human-readable linked data format.
curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s106378261813016x'
RDF/XML is a standard XML format for linked data.
curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s106378261813016x'
This table displays all metadata directly associated to this object as RDF triples.
245 TRIPLES
22 PREDICATES
100 URIs
82 LITERALS
6 BLANK NODES