Features of the Selective Growth of GaN Nanorods on Patterned c-Sapphire Substrates of Various Configurations View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-12-24

AUTHORS

A. N. Semenov, D. V. Nechaev, S. I. Troshkov, A. V. Nashchekin, P. N. Brunkov, V. N. Jmerik, S. V. Ivanov

ABSTRACT

The growth features of GaN nanorods on patterned c-sapphire substrates with a regular microcone array having a different density and base diameter in the ranges of (1–5) × 107 cm–2 and 2.5–3.5 μm, respectively, are investigated. The kinetics is studied and the selective-growth regimes are determined for single GaN nanorods with a diameter of 30–100 nm at the vertices of microcones under radically lower growth rates on their slopes. The effect of the configuration of microcones, the substrate temperature, the roughness of the initial surface, and the presence of indium as a surfactant on the degree of growth selectivity is investigated. More... »

PAGES

1770-1774

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782618130158

DOI

http://dx.doi.org/10.1134/s1063782618130158

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1110893920


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