GaInAsP/InP-Based Laser Power Converters (λ = 1064 nm) View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-12

AUTHORS

V. P. Khvostikov, S. V. Sorokina, N. S. Potapovich, R. V. Levin, A. E. Marichev, N. Kh. Timoshina, B. V. Pushnyi

ABSTRACT

Photovoltaic laser-power converters with irradiation of the substrate side are developed based on lattice-matched GaInAs/InP heterostructures formed by metal-organic vapor-phase epitaxy. Variants of antireflection coatings with a reflection minimum at a wavelength of λ = 1064 nm as well as features of chip bonding using soldering pastes with different melting points are considered. The efficiency of 34.5% (1.2 W, λ =1064 nm) is achieved for the converters with the area of 3.5 × 3.5 mm2 at uniform radiation conditions. More... »

PAGES

1748-1753

References to SciGraph publications

Journal

TITLE

Semiconductors

ISSUE

13

VOLUME

52

Author Affiliations

From Grant

  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/s1063782618130079

    DOI

    http://dx.doi.org/10.1134/s1063782618130079

    DIMENSIONS

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