Ontology type: schema:ScholarlyArticle
2018-12
AUTHORSV. P. Khvostikov, S. V. Sorokina, N. S. Potapovich, R. V. Levin, A. E. Marichev, N. Kh. Timoshina, B. V. Pushnyi
ABSTRACTPhotovoltaic laser-power converters with irradiation of the substrate side are developed based on lattice-matched GaInAs/InP heterostructures formed by metal-organic vapor-phase epitaxy. Variants of antireflection coatings with a reflection minimum at a wavelength of λ = 1064 nm as well as features of chip bonding using soldering pastes with different melting points are considered. The efficiency of 34.5% (1.2 W, λ =1064 nm) is achieved for the converters with the area of 3.5 × 3.5 mm2 at uniform radiation conditions. More... »
PAGES1748-1753
http://scigraph.springernature.com/pub.10.1134/s1063782618130079
DOIhttp://dx.doi.org/10.1134/s1063782618130079
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