Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects View Full Text


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Article Info

DATE

2018-11-07

AUTHORS

V. V. Kozlovski, A. A. Lebedev, K. S. Davydovskaya, Yu. V. Lyubimova

ABSTRACT

JBS diodes based on 4H-SiC irradiated with electrons and protons are studied. This is carried out by using the methods of capacitance–voltage and current–voltage characteristics. It is concluded that, for both kinds of irradiation, deep centers are formed in the upper half of the band gap of silicon carbide. This leads to a sharp decrease in the concentration of ionized carriers in the conduction band and to an exponential increase in the resistance of the base regions of the structures under study. More... »

PAGES

1635-1637

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782618120138

DOI

http://dx.doi.org/10.1134/s1063782618120138

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1109764840


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.32495.39", 
          "name": [
            "Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kozlovski", 
        "givenName": "V. V.", 
        "id": "sg:person.011730241573.99", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011730241573.99"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg State Electrotechnical University LETI named after V.I. Ulianov (Lenin), 197376, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.15447.33", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia", 
            "St. Petersburg State Electrotechnical University LETI named after V.I. Ulianov (Lenin), 197376, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lebedev", 
        "givenName": "A. A.", 
        "id": "sg:person.011264364575.18", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011264364575.18"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Davydovskaya", 
        "givenName": "K. S.", 
        "id": "sg:person.014020604067.18", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014020604067.18"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg National Research University of Information Technologies, Mechanics and Optics, 197101, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.35915.3b", 
          "name": [
            "St. Petersburg National Research University of Information Technologies, Mechanics and Optics, 197101, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lyubimova", 
        "givenName": "Yu. V.", 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s1027451015020123", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1047754974", 
          "https://doi.org/10.1134/s1027451015020123"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782614120069", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1050040548", 
          "https://doi.org/10.1134/s1063782614120069"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782616100122", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1019764057", 
          "https://doi.org/10.1134/s1063782616100122"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2018-11-07", 
    "datePublishedReg": "2018-11-07", 
    "description": "JBS diodes based on 4H-SiC irradiated with electrons and protons are studied. This is carried out by using the methods of capacitance\u2013voltage and current\u2013voltage characteristics. It is concluded that, for both kinds of irradiation, deep centers are formed in the upper half of the band gap of silicon carbide. This leads to a sharp decrease in the concentration of ionized carriers in the conduction band and to an exponential increase in the resistance of the base regions of the structures under study.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782618120138", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isFundedItemOf": [
      {
        "id": "sg:grant.5052789", 
        "type": "MonetaryGrant"
      }
    ], 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "12", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "52"
      }
    ], 
    "keywords": [
      "current-voltage characteristics", 
      "silicon carbide", 
      "upper half", 
      "half", 
      "decrease", 
      "study", 
      "band gap", 
      "center", 
      "increase", 
      "capacitive effects", 
      "defects", 
      "base region", 
      "effect", 
      "resistance", 
      "concentration", 
      "exponential increase", 
      "conductivity compensation", 
      "sharp decrease", 
      "deep centers", 
      "carbide", 
      "carriers", 
      "irradiation", 
      "conduction band", 
      "galvanic", 
      "JBS", 
      "characteristics", 
      "radiation", 
      "kind of irradiation", 
      "region", 
      "method", 
      "compensation", 
      "structure", 
      "gap", 
      "kind", 
      "electrons", 
      "band", 
      "protons", 
      "SiC Conductivity Compensation"
    ], 
    "name": "Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects", 
    "pagination": "1635-1637", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1109764840"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782618120138"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782618120138", 
      "https://app.dimensions.ai/details/publication/pub.1109764840"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2021-11-01T18:33", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20211101/entities/gbq_results/article/article_790.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782618120138"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

144 TRIPLES      22 PREDICATES      67 URIs      55 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782618120138 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author Na7ac9ec01bab4740a18053b7022fd1f1
5 schema:citation sg:pub.10.1134/s1027451015020123
6 sg:pub.10.1134/s1063782614120069
7 sg:pub.10.1134/s1063782616100122
8 schema:datePublished 2018-11-07
9 schema:datePublishedReg 2018-11-07
10 schema:description JBS diodes based on 4H-SiC irradiated with electrons and protons are studied. This is carried out by using the methods of capacitance–voltage and current–voltage characteristics. It is concluded that, for both kinds of irradiation, deep centers are formed in the upper half of the band gap of silicon carbide. This leads to a sharp decrease in the concentration of ionized carriers in the conduction band and to an exponential increase in the resistance of the base regions of the structures under study.
11 schema:genre article
12 schema:inLanguage en
13 schema:isAccessibleForFree false
14 schema:isPartOf N8b5a2e92c5c34556834d27bdee1e18c7
15 N8c26c03d4b3d41d3b5bdab7f76d02724
16 sg:journal.1136692
17 schema:keywords JBS
18 SiC Conductivity Compensation
19 band
20 band gap
21 base region
22 capacitive effects
23 carbide
24 carriers
25 center
26 characteristics
27 compensation
28 concentration
29 conduction band
30 conductivity compensation
31 current-voltage characteristics
32 decrease
33 deep centers
34 defects
35 effect
36 electrons
37 exponential increase
38 galvanic
39 gap
40 half
41 increase
42 irradiation
43 kind
44 kind of irradiation
45 method
46 protons
47 radiation
48 region
49 resistance
50 sharp decrease
51 silicon carbide
52 structure
53 study
54 upper half
55 schema:name Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects
56 schema:pagination 1635-1637
57 schema:productId N2cd9b76695ab4e20b5c4d1e9438cf1d0
58 N2dc8bfdf2d2b4ab2ab3d38d6e2b6c717
59 schema:sameAs https://app.dimensions.ai/details/publication/pub.1109764840
60 https://doi.org/10.1134/s1063782618120138
61 schema:sdDatePublished 2021-11-01T18:33
62 schema:sdLicense https://scigraph.springernature.com/explorer/license/
63 schema:sdPublisher Nd23ac45acb0d414c82e0df886da50519
64 schema:url https://doi.org/10.1134/s1063782618120138
65 sgo:license sg:explorer/license/
66 sgo:sdDataset articles
67 rdf:type schema:ScholarlyArticle
68 N04305d40e40b4f62bac53b0e4b67b4a8 rdf:first sg:person.011264364575.18
69 rdf:rest N789625ffd7ae42cea8d3ce984c200092
70 N12b3a06c984a45348d21561e2f118691 schema:affiliation grid-institutes:grid.35915.3b
71 schema:familyName Lyubimova
72 schema:givenName Yu. V.
73 rdf:type schema:Person
74 N2cd9b76695ab4e20b5c4d1e9438cf1d0 schema:name dimensions_id
75 schema:value pub.1109764840
76 rdf:type schema:PropertyValue
77 N2dc8bfdf2d2b4ab2ab3d38d6e2b6c717 schema:name doi
78 schema:value 10.1134/s1063782618120138
79 rdf:type schema:PropertyValue
80 N789625ffd7ae42cea8d3ce984c200092 rdf:first sg:person.014020604067.18
81 rdf:rest Na7166d5bed3a444b994469af2d098765
82 N8b5a2e92c5c34556834d27bdee1e18c7 schema:volumeNumber 52
83 rdf:type schema:PublicationVolume
84 N8c26c03d4b3d41d3b5bdab7f76d02724 schema:issueNumber 12
85 rdf:type schema:PublicationIssue
86 Na7166d5bed3a444b994469af2d098765 rdf:first N12b3a06c984a45348d21561e2f118691
87 rdf:rest rdf:nil
88 Na7ac9ec01bab4740a18053b7022fd1f1 rdf:first sg:person.011730241573.99
89 rdf:rest N04305d40e40b4f62bac53b0e4b67b4a8
90 Nd23ac45acb0d414c82e0df886da50519 schema:name Springer Nature - SN SciGraph project
91 rdf:type schema:Organization
92 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
93 schema:name Physical Sciences
94 rdf:type schema:DefinedTerm
95 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
96 schema:name Condensed Matter Physics
97 rdf:type schema:DefinedTerm
98 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
99 schema:name Quantum Physics
100 rdf:type schema:DefinedTerm
101 sg:grant.5052789 http://pending.schema.org/fundedItem sg:pub.10.1134/s1063782618120138
102 rdf:type schema:MonetaryGrant
103 sg:journal.1136692 schema:issn 1063-7826
104 1090-6479
105 schema:name Semiconductors
106 schema:publisher Pleiades Publishing
107 rdf:type schema:Periodical
108 sg:person.011264364575.18 schema:affiliation grid-institutes:grid.15447.33
109 schema:familyName Lebedev
110 schema:givenName A. A.
111 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011264364575.18
112 rdf:type schema:Person
113 sg:person.011730241573.99 schema:affiliation grid-institutes:grid.32495.39
114 schema:familyName Kozlovski
115 schema:givenName V. V.
116 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011730241573.99
117 rdf:type schema:Person
118 sg:person.014020604067.18 schema:affiliation grid-institutes:grid.423485.c
119 schema:familyName Davydovskaya
120 schema:givenName K. S.
121 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014020604067.18
122 rdf:type schema:Person
123 sg:pub.10.1134/s1027451015020123 schema:sameAs https://app.dimensions.ai/details/publication/pub.1047754974
124 https://doi.org/10.1134/s1027451015020123
125 rdf:type schema:CreativeWork
126 sg:pub.10.1134/s1063782614120069 schema:sameAs https://app.dimensions.ai/details/publication/pub.1050040548
127 https://doi.org/10.1134/s1063782614120069
128 rdf:type schema:CreativeWork
129 sg:pub.10.1134/s1063782616100122 schema:sameAs https://app.dimensions.ai/details/publication/pub.1019764057
130 https://doi.org/10.1134/s1063782616100122
131 rdf:type schema:CreativeWork
132 grid-institutes:grid.15447.33 schema:alternateName St. Petersburg State Electrotechnical University LETI named after V.I. Ulianov (Lenin), 197376, St. Petersburg, Russia
133 schema:name Ioffe Institute, 194021, St. Petersburg, Russia
134 St. Petersburg State Electrotechnical University LETI named after V.I. Ulianov (Lenin), 197376, St. Petersburg, Russia
135 rdf:type schema:Organization
136 grid-institutes:grid.32495.39 schema:alternateName Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia
137 schema:name Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia
138 rdf:type schema:Organization
139 grid-institutes:grid.35915.3b schema:alternateName St. Petersburg National Research University of Information Technologies, Mechanics and Optics, 197101, St. Petersburg, Russia
140 schema:name St. Petersburg National Research University of Information Technologies, Mechanics and Optics, 197101, St. Petersburg, Russia
141 rdf:type schema:Organization
142 grid-institutes:grid.423485.c schema:alternateName Ioffe Institute, 194021, St. Petersburg, Russia
143 schema:name Ioffe Institute, 194021, St. Petersburg, Russia
144 rdf:type schema:Organization
 




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