Avalanche Breakdown Stability of High Voltage (1430 V) 4H-SiC p+–n0–n+ Diodes View Full Text


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Article Info

DATE

2018-11-07

AUTHORS

P. A. Ivanov, T. P. Samsonova, A. S. Potapov

ABSTRACT

The electrothermal breakdown in high-voltage (1430 V) 4H-SiC p+–n0–n+ diodes with an n0-base thickness of 7.5 μm, a donor concentration of 8.0 × 1015 cm–3, and 4.9 × 10–4 cm2 in area are studied. The stability of the diodes to avalanche breakdown is characterized by the maximum energy of a single avalanche current pulse that can be scattered by a diode until its catastrophic destruction. At a pulse duration of ~1 μs, the energy maximum is 1.4 mJ (2.9 J/cm2). It is shown that diode destruction is caused by local overheating of the diode structure to a temperature of ~1600 K at which the intrinsic carrier concentration becomes higher than the doping donor concentrations in the blocking n0-type base. More... »

PAGES

1630-1634

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782618120126

DOI

http://dx.doi.org/10.1134/s1063782618120126

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1109764834


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