Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-11-07

AUTHORS

P. A. Alekseev, M. S. Dunaevskiy, A. O. Mikhailov, S. P. Lebedev, A. A. Lebedev, I. V. Ilkiv, A. I. Khrebtov, A. D. Bouravleuv, G. E. Cirlin

ABSTRACT

The electrical properties of GaAs nanowires grown on a 6H-SiC (0001) substrate covered with graphene single layers and bilayers are studied. The nanowires are grown by molecular-beam epitaxy, with gold as a catalyst. The electrical properties are studied by measuring and analyzing the current–voltage characteristics of single nanowires vertically grown on a substrate. Numerical simulation of the experimental current–voltage curves revealed the presence of a ~0.6-V-high Schottky barrier between the nanowires and graphene. The appearance of the barrier is due to the formation of excess arsenic at the nanowire/graphene interface. More... »

PAGES

1611-1615

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782618120047

DOI

http://dx.doi.org/10.1134/s1063782618120047

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1109764836


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183 grid-institutes:grid.434964.8 schema:alternateName Institute for Analytical Instrumentation, Russian Academy of Sciences, 190103, St. Petersburg, Russia
184 schema:name ITMO University, 197101, St. Petersburg, Russia
185 Institute for Analytical Instrumentation, Russian Academy of Sciences, 190103, St. Petersburg, Russia
186 Ioffe Institute, 194021, St. Petersburg, Russia
187 St. Petersburg Academic University, 194021, St. Petersburg, Russia
188 rdf:type schema:Organization
 




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