Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-10-18

AUTHORS

G. E. Cirlin, R. R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, K. P. Kotlyar, I. V. Ilkiv, I. P. Soshnikov, D. A. Kirilenko, N. V. Kryzhanovskaya

ABSTRACT

Data on the growth and physical properties of nanostructures of the type “InAsP insert embedded in InP nanowire (NW)” grown on Si (111) surfaces by Au-assisted molecular-beam epitaxy are presented. It is found that nearly 100%-coherent NWs can be grown with a widely varying surface density. A relationship between the optical and structural properties of the NWs is revealed. It is shown that the NWs under study are formed of a purely wurtzite phase. The suggested technology opens up new opportunities for the integration of direct-gap III–V materials and silicon. More... »

PAGES

1416-1419

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782618110258

DOI

http://dx.doi.org/10.1134/s1063782618110258

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1107705628


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