Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut View Full Text


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Article Info

DATE

2018-11

AUTHORS

Yu. N. Drozdov, O. I. Khrikin, P. A. Yunin

ABSTRACT

The deformation of a (0001)GaN epitaxial layer on the (110) sapphire a-cut is studied by X-ray diffractometry. Anisotropic-layer deformation is calculated by reference data on the thermal expansion coefficients of gallium nitride and sapphire. A comparison of the calculated and experimental deformation confirms the hypothesis on the thermoelastic character of GaN deformation on the sapphire a-cut. This result makes it possible, in particular, to assess theoretically the elastic deformation and piezoelectric field in pseudomorphic heterostructures with GaN layers on the sapphire a-cut as a virtual substrate or a buffer layer. More... »

PAGES

1491-1494

References to SciGraph publications

  • 2016-01. On the use of an external reference sample in the X-ray diffraction analysis of epitaxial layers in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/s1063782618110088

    DOI

    http://dx.doi.org/10.1134/s1063782618110088

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1107700287


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