Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-09-06

AUTHORS

M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, R. A. Salii, M. Z. Shvarts, N. A. Kalyuzhnyy

ABSTRACT

Photovoltaic structures on the basis of GaAs p–i–n junctions with a different number of In0.4Ga0.6As layers in the space-charge region forming quantum-confined objects are experimentally and theoretically investigated. For all structures, the dependences of the open-circuit voltage on the solar-irradiation concentration are analyzed. It is shown that the implantation of quantum objects leads to the dominance of recombination in them over recombination in the matrix, which manifests itself in a drop in the open-circuit-voltage. An increase in the number of In0.4Ga0.6As layers leads to a proportional increase in the recombination rate, which is expressed in a proportional increase in the “saturation” current and corresponds to the model proposed in the study. More... »

PAGES

1244-1248

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782618100135

DOI

http://dx.doi.org/10.1134/s1063782618100135

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1106824422


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mintairov", 
        "givenName": "M. A.", 
        "id": "sg:person.013224043671.45", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013224043671.45"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Evstropov", 
        "givenName": "V. V.", 
        "id": "sg:person.013245131377.70", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013245131377.70"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mintairov", 
        "givenName": "S. A.", 
        "id": "sg:person.07536566153.48", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07536566153.48"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Salii", 
        "givenName": "R. A.", 
        "id": "sg:person.016373405407.44", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016373405407.44"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shvarts", 
        "givenName": "M. Z.", 
        "id": "sg:person.016332220465.73", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016332220465.73"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kalyuzhnyy", 
        "givenName": "N. A.", 
        "id": "sg:person.014537453054.16", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014537453054.16"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/1.1521237", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1038708650", 
          "https://doi.org/10.1134/1.1521237"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2018-09-06", 
    "datePublishedReg": "2018-09-06", 
    "description": "Photovoltaic structures on the basis of GaAs p\u2013i\u2013n junctions with a different number of In0.4Ga0.6As layers in the space-charge region forming quantum-confined objects are experimentally and theoretically investigated. For all structures, the dependences of the open-circuit voltage on the solar-irradiation concentration are analyzed. It is shown that the implantation of quantum objects leads to the dominance of recombination in them over recombination in the matrix, which manifests itself in a drop in the open-circuit-voltage. An increase in the number of In0.4Ga0.6As layers leads to a proportional increase in the recombination rate, which is expressed in a proportional increase in the \u201csaturation\u201d current and corresponds to the model proposed in the study.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782618100135", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isFundedItemOf": [
      {
        "id": "sg:grant.6959404", 
        "type": "MonetaryGrant"
      }
    ], 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "10", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "52"
      }
    ], 
    "keywords": [
      "GaAs p", 
      "space charge region", 
      "InGaAs quantum", 
      "photovoltaic structures", 
      "open-circuit voltage", 
      "quantum", 
      "recombination rate", 
      "different numbers", 
      "recombination", 
      "objects", 
      "voltage", 
      "regularity", 
      "layer", 
      "modeling", 
      "structure", 
      "matrix", 
      "dependence", 
      "number", 
      "model", 
      "saturation", 
      "junction", 
      "implantation", 
      "region", 
      "basis", 
      "drop", 
      "increase", 
      "concentration", 
      "rate", 
      "dominance", 
      "study", 
      "proportional increase"
    ], 
    "name": "Recombination in GaAs p\u2013i\u2013n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities", 
    "pagination": "1244-1248", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1106824422"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782618100135"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782618100135", 
      "https://app.dimensions.ai/details/publication/pub.1106824422"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-20T07:33", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_755.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782618100135"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782618100135'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782618100135'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782618100135'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782618100135'


 

This table displays all metadata directly associated to this object as RDF triples.

131 TRIPLES      22 PREDICATES      57 URIs      48 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782618100135 schema:about anzsrc-for:02
2 anzsrc-for:0206
3 schema:author N129f53e78dce49fca0d49c3e1de93307
4 schema:citation sg:pub.10.1134/1.1521237
5 schema:datePublished 2018-09-06
6 schema:datePublishedReg 2018-09-06
7 schema:description Photovoltaic structures on the basis of GaAs p–i–n junctions with a different number of In0.4Ga0.6As layers in the space-charge region forming quantum-confined objects are experimentally and theoretically investigated. For all structures, the dependences of the open-circuit voltage on the solar-irradiation concentration are analyzed. It is shown that the implantation of quantum objects leads to the dominance of recombination in them over recombination in the matrix, which manifests itself in a drop in the open-circuit-voltage. An increase in the number of In0.4Ga0.6As layers leads to a proportional increase in the recombination rate, which is expressed in a proportional increase in the “saturation” current and corresponds to the model proposed in the study.
8 schema:genre article
9 schema:inLanguage en
10 schema:isAccessibleForFree false
11 schema:isPartOf N03bac16958054edf9419ed6ab51279df
12 N1a5984f3f87448ea924ab982fa3eb98a
13 sg:journal.1136692
14 schema:keywords GaAs p
15 InGaAs quantum
16 basis
17 concentration
18 dependence
19 different numbers
20 dominance
21 drop
22 implantation
23 increase
24 junction
25 layer
26 matrix
27 model
28 modeling
29 number
30 objects
31 open-circuit voltage
32 photovoltaic structures
33 proportional increase
34 quantum
35 rate
36 recombination
37 recombination rate
38 region
39 regularity
40 saturation
41 space charge region
42 structure
43 study
44 voltage
45 schema:name Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities
46 schema:pagination 1244-1248
47 schema:productId N05f90c752ef04acfb070d9ac9adfc324
48 N8f9c9a6ac4414234987518ac2c1477c7
49 schema:sameAs https://app.dimensions.ai/details/publication/pub.1106824422
50 https://doi.org/10.1134/s1063782618100135
51 schema:sdDatePublished 2022-05-20T07:33
52 schema:sdLicense https://scigraph.springernature.com/explorer/license/
53 schema:sdPublisher N5cc88984e9a346aaaa79d3c677adc5ab
54 schema:url https://doi.org/10.1134/s1063782618100135
55 sgo:license sg:explorer/license/
56 sgo:sdDataset articles
57 rdf:type schema:ScholarlyArticle
58 N03bac16958054edf9419ed6ab51279df schema:volumeNumber 52
59 rdf:type schema:PublicationVolume
60 N05f90c752ef04acfb070d9ac9adfc324 schema:name dimensions_id
61 schema:value pub.1106824422
62 rdf:type schema:PropertyValue
63 N129f53e78dce49fca0d49c3e1de93307 rdf:first sg:person.013224043671.45
64 rdf:rest Neffe13e440d24307afca172729e39a5d
65 N1a5984f3f87448ea924ab982fa3eb98a schema:issueNumber 10
66 rdf:type schema:PublicationIssue
67 N2f0e34c72c5f41deadbef04de8367633 rdf:first sg:person.016373405407.44
68 rdf:rest Nf7b83c3900b64ace8e08d5a7e20b49ea
69 N5cc88984e9a346aaaa79d3c677adc5ab schema:name Springer Nature - SN SciGraph project
70 rdf:type schema:Organization
71 N8f9c9a6ac4414234987518ac2c1477c7 schema:name doi
72 schema:value 10.1134/s1063782618100135
73 rdf:type schema:PropertyValue
74 Na00223eb052e4c2c979fff83933fd0af rdf:first sg:person.014537453054.16
75 rdf:rest rdf:nil
76 Ncfd07bf9ab024ae69916a42505325e8f rdf:first sg:person.07536566153.48
77 rdf:rest N2f0e34c72c5f41deadbef04de8367633
78 Neffe13e440d24307afca172729e39a5d rdf:first sg:person.013245131377.70
79 rdf:rest Ncfd07bf9ab024ae69916a42505325e8f
80 Nf7b83c3900b64ace8e08d5a7e20b49ea rdf:first sg:person.016332220465.73
81 rdf:rest Na00223eb052e4c2c979fff83933fd0af
82 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
83 schema:name Physical Sciences
84 rdf:type schema:DefinedTerm
85 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
86 schema:name Quantum Physics
87 rdf:type schema:DefinedTerm
88 sg:grant.6959404 http://pending.schema.org/fundedItem sg:pub.10.1134/s1063782618100135
89 rdf:type schema:MonetaryGrant
90 sg:journal.1136692 schema:issn 1063-7826
91 1090-6479
92 schema:name Semiconductors
93 schema:publisher Pleiades Publishing
94 rdf:type schema:Periodical
95 sg:person.013224043671.45 schema:affiliation grid-institutes:grid.423485.c
96 schema:familyName Mintairov
97 schema:givenName M. A.
98 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013224043671.45
99 rdf:type schema:Person
100 sg:person.013245131377.70 schema:affiliation grid-institutes:grid.423485.c
101 schema:familyName Evstropov
102 schema:givenName V. V.
103 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013245131377.70
104 rdf:type schema:Person
105 sg:person.014537453054.16 schema:affiliation grid-institutes:grid.423485.c
106 schema:familyName Kalyuzhnyy
107 schema:givenName N. A.
108 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014537453054.16
109 rdf:type schema:Person
110 sg:person.016332220465.73 schema:affiliation grid-institutes:grid.423485.c
111 schema:familyName Shvarts
112 schema:givenName M. Z.
113 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016332220465.73
114 rdf:type schema:Person
115 sg:person.016373405407.44 schema:affiliation grid-institutes:grid.423485.c
116 schema:familyName Salii
117 schema:givenName R. A.
118 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016373405407.44
119 rdf:type schema:Person
120 sg:person.07536566153.48 schema:affiliation grid-institutes:grid.423485.c
121 schema:familyName Mintairov
122 schema:givenName S. A.
123 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07536566153.48
124 rdf:type schema:Person
125 sg:pub.10.1134/1.1521237 schema:sameAs https://app.dimensions.ai/details/publication/pub.1038708650
126 https://doi.org/10.1134/1.1521237
127 rdf:type schema:CreativeWork
128 grid-institutes:grid.423485.c schema:alternateName Ioffe Institute, 194021, St. Petersburg, Russia
129 schema:name Ioffe Institute, 194021, St. Petersburg, Russia
130 Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences, 194021, St. Petersburg, Russia
131 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...