Ontology type: schema:ScholarlyArticle
2018-09-06
AUTHORSM. A. Mintairov, V. V. Evstropov, S. A. Mintairov, R. A. Salii, M. Z. Shvarts, N. A. Kalyuzhnyy
ABSTRACTPhotovoltaic structures on the basis of GaAs p–i–n junctions with a different number of In0.4Ga0.6As layers in the space-charge region forming quantum-confined objects are experimentally and theoretically investigated. For all structures, the dependences of the open-circuit voltage on the solar-irradiation concentration are analyzed. It is shown that the implantation of quantum objects leads to the dominance of recombination in them over recombination in the matrix, which manifests itself in a drop in the open-circuit-voltage. An increase in the number of In0.4Ga0.6As layers leads to a proportional increase in the recombination rate, which is expressed in a proportional increase in the “saturation” current and corresponds to the model proposed in the study. More... »
PAGES1244-1248
http://scigraph.springernature.com/pub.10.1134/s1063782618100135
DOIhttp://dx.doi.org/10.1134/s1063782618100135
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