Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on ... View Full Text


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Article Info

DATE

2018-09-06

AUTHORS

M. V. Maximov, A. M. Nadtochiy, Yu. M. Shernyakov, A. S. Payusov, A. P. Vasil’ev, V. M. Ustinov, A. A. Serin, N. Yu. Gordeev, A. E. Zhukov

ABSTRACT

The characteristics of lasers of the 1.44–1.46-μm optical range grown on GaAs substrates using a metamorphic buffer are studied. The active region of the laser contains 10 rows of InAs/In0.4Ga0.6As/In0.2Ga0.8As quantum dots. It is shown that the use of special selective high-temperature annealing along with the application of short-period In0.2Ga0.8As/In0.2Al0.3Ga0.5As short-period superlattices makes it possible to substantially decrease the density of threading dislocations in the active region. A threshold current density of 1300 A cm–2, external differential quantum efficiency of 38%, and maximal pulsed-mode output power of 13 W are attained for a laser with a broad area 3 mm in length. More... »

PAGES

1311-1316

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782618100093

DOI

http://dx.doi.org/10.1134/s1063782618100093

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1106817742


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0205", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Optical Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "St. Petersburg Academic University, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.35135.31", 
          "name": [
            "St. Petersburg Academic University, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Maximov", 
        "givenName": "M. V.", 
        "id": "sg:person.015106205514.66", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015106205514.66"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg Academic University, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.35135.31", 
          "name": [
            "St. Petersburg Academic University, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Nadtochiy", 
        "givenName": "A. M.", 
        "id": "sg:person.01114776037.19", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01114776037.19"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shernyakov", 
        "givenName": "Yu. M.", 
        "id": "sg:person.014411372640.54", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014411372640.54"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Payusov", 
        "givenName": "A. S.", 
        "id": "sg:person.01260404165.29", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01260404165.29"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Submicron Heterostructures for Mircoelectronics, Research & Engineering Center,\nRussian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "Submicron Heterostructures for Mircoelectronics, Research & Engineering Center,\nRussian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Vasil\u2019ev", 
        "givenName": "A. P.", 
        "id": "sg:person.014334030356.12", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014334030356.12"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg Electrotechnical University \u201cLETI\u201d, 197376, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.15447.33", 
          "name": [
            "Submicron Heterostructures for Mircoelectronics, Research & Engineering Center,\nRussian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "St. Petersburg Electrotechnical University \u201cLETI\u201d, 197376, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ustinov", 
        "givenName": "V. M.", 
        "id": "sg:person.012211352412.34", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012211352412.34"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Serin", 
        "givenName": "A. A.", 
        "id": "sg:person.015541716704.69", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015541716704.69"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Gordeev", 
        "givenName": "N. Yu.", 
        "id": "sg:person.010536465737.08", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010536465737.08"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg Academic University, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.35135.31", 
          "name": [
            "St. Petersburg Academic University, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zhukov", 
        "givenName": "A. E.", 
        "id": "sg:person.011315427765.17", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011315427765.17"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/1.1766381", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1041911429", 
          "https://doi.org/10.1134/1.1766381"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782611020187", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1006629101", 
          "https://doi.org/10.1134/s1063782611020187"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nphoton.2016.21", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1014020736", 
          "https://doi.org/10.1038/nphoton.2016.21"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2018-09-06", 
    "datePublishedReg": "2018-09-06", 
    "description": "The characteristics of lasers of the 1.44\u20131.46-\u03bcm optical range grown on GaAs substrates using a metamorphic buffer are studied. The active region of the laser contains 10 rows of InAs/In0.4Ga0.6As/In0.2Ga0.8As quantum dots. It is shown that the use of special selective high-temperature annealing along with the application of short-period In0.2Ga0.8As/In0.2Al0.3Ga0.5As short-period superlattices makes it possible to substantially decrease the density of threading dislocations in the active region. A\u00a0threshold current density of 1300 A cm\u20132, external differential quantum efficiency of 38%, and maximal pulsed-mode output power of 13 W are attained for a laser with a broad area 3 mm in length.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782618100093", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isFundedItemOf": [
      {
        "id": "sg:grant.6742726", 
        "type": "MonetaryGrant"
      }
    ], 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "10", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "52"
      }
    ], 
    "keywords": [
      "external differential quantum efficiency", 
      "quantum dots", 
      "active region", 
      "differential quantum efficiency", 
      "threshold current density", 
      "GaAs substrates", 
      "characteristics of laser", 
      "short-period superlattices", 
      "metamorphic lasers", 
      "optical range", 
      "quantum efficiency", 
      "high-temperature annealing", 
      "laser", 
      "output power", 
      "metamorphic buffer", 
      "current density", 
      "dots", 
      "Range Based", 
      "superlattices", 
      "density", 
      "substrate", 
      "annealing", 
      "region", 
      "characteristics", 
      "growth parameters", 
      "dislocations", 
      "efficiency", 
      "Based", 
      "design", 
      "power", 
      "range", 
      "applications", 
      "parameters", 
      "broad areas", 
      "length", 
      "rows", 
      "effect", 
      "area", 
      "use", 
      "buffer"
    ], 
    "name": "Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-\u03bcm Optical Range Based on Quantum Dots Grown on GaAs Substrates", 
    "pagination": "1311-1316", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1106817742"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782618100093"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782618100093", 
      "https://app.dimensions.ai/details/publication/pub.1106817742"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-10T10:21", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220509/entities/gbq_results/article/article_773.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782618100093"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

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This table displays all metadata directly associated to this object as RDF triples.

178 TRIPLES      22 PREDICATES      68 URIs      57 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782618100093 schema:about anzsrc-for:02
2 anzsrc-for:0205
3 schema:author Nb0e9285551f74b7b9613860ab48a83e3
4 schema:citation sg:pub.10.1038/nphoton.2016.21
5 sg:pub.10.1134/1.1766381
6 sg:pub.10.1134/s1063782611020187
7 schema:datePublished 2018-09-06
8 schema:datePublishedReg 2018-09-06
9 schema:description The characteristics of lasers of the 1.44–1.46-μm optical range grown on GaAs substrates using a metamorphic buffer are studied. The active region of the laser contains 10 rows of InAs/In0.4Ga0.6As/In0.2Ga0.8As quantum dots. It is shown that the use of special selective high-temperature annealing along with the application of short-period In0.2Ga0.8As/In0.2Al0.3Ga0.5As short-period superlattices makes it possible to substantially decrease the density of threading dislocations in the active region. A threshold current density of 1300 A cm–2, external differential quantum efficiency of 38%, and maximal pulsed-mode output power of 13 W are attained for a laser with a broad area 3 mm in length.
10 schema:genre article
11 schema:inLanguage en
12 schema:isAccessibleForFree false
13 schema:isPartOf N056551d3c424410b93d96fe2e6804581
14 Ndbfcb267d9484455b7c47cd9e055c532
15 sg:journal.1136692
16 schema:keywords Based
17 GaAs substrates
18 Range Based
19 active region
20 annealing
21 applications
22 area
23 broad areas
24 buffer
25 characteristics
26 characteristics of laser
27 current density
28 density
29 design
30 differential quantum efficiency
31 dislocations
32 dots
33 effect
34 efficiency
35 external differential quantum efficiency
36 growth parameters
37 high-temperature annealing
38 laser
39 length
40 metamorphic buffer
41 metamorphic lasers
42 optical range
43 output power
44 parameters
45 power
46 quantum dots
47 quantum efficiency
48 range
49 region
50 rows
51 short-period superlattices
52 substrate
53 superlattices
54 threshold current density
55 use
56 schema:name Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates
57 schema:pagination 1311-1316
58 schema:productId N01dd4786233a4d9f94946f6ae8201c4c
59 N4d047601e34846a380133566d39b8d76
60 schema:sameAs https://app.dimensions.ai/details/publication/pub.1106817742
61 https://doi.org/10.1134/s1063782618100093
62 schema:sdDatePublished 2022-05-10T10:21
63 schema:sdLicense https://scigraph.springernature.com/explorer/license/
64 schema:sdPublisher N6de6bc4fe93e4d8ebe4cdff724573cd6
65 schema:url https://doi.org/10.1134/s1063782618100093
66 sgo:license sg:explorer/license/
67 sgo:sdDataset articles
68 rdf:type schema:ScholarlyArticle
69 N01dd4786233a4d9f94946f6ae8201c4c schema:name dimensions_id
70 schema:value pub.1106817742
71 rdf:type schema:PropertyValue
72 N056551d3c424410b93d96fe2e6804581 schema:issueNumber 10
73 rdf:type schema:PublicationIssue
74 N0bdb338e26304a72bec952c9f9ceef8c rdf:first sg:person.014411372640.54
75 rdf:rest N41e4b4e0f2c4449285e759961811213d
76 N196e80fc43d146edb49ea57b7ba1272a rdf:first sg:person.012211352412.34
77 rdf:rest Nce7da2b023254ff5a74a3461c1a723d3
78 N41e4b4e0f2c4449285e759961811213d rdf:first sg:person.01260404165.29
79 rdf:rest N8633a91331b542fe90a1457f54e5270f
80 N4d047601e34846a380133566d39b8d76 schema:name doi
81 schema:value 10.1134/s1063782618100093
82 rdf:type schema:PropertyValue
83 N5169fd1235a245dc913c536c5919f738 rdf:first sg:person.01114776037.19
84 rdf:rest N0bdb338e26304a72bec952c9f9ceef8c
85 N6de6bc4fe93e4d8ebe4cdff724573cd6 schema:name Springer Nature - SN SciGraph project
86 rdf:type schema:Organization
87 N8633a91331b542fe90a1457f54e5270f rdf:first sg:person.014334030356.12
88 rdf:rest N196e80fc43d146edb49ea57b7ba1272a
89 Na7fe9829b7c341b383421faf372f4046 rdf:first sg:person.011315427765.17
90 rdf:rest rdf:nil
91 Nb0e9285551f74b7b9613860ab48a83e3 rdf:first sg:person.015106205514.66
92 rdf:rest N5169fd1235a245dc913c536c5919f738
93 Nce7da2b023254ff5a74a3461c1a723d3 rdf:first sg:person.015541716704.69
94 rdf:rest Ne2339b96e128430b962e9331fadec950
95 Ndbfcb267d9484455b7c47cd9e055c532 schema:volumeNumber 52
96 rdf:type schema:PublicationVolume
97 Ne2339b96e128430b962e9331fadec950 rdf:first sg:person.010536465737.08
98 rdf:rest Na7fe9829b7c341b383421faf372f4046
99 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
100 schema:name Physical Sciences
101 rdf:type schema:DefinedTerm
102 anzsrc-for:0205 schema:inDefinedTermSet anzsrc-for:
103 schema:name Optical Physics
104 rdf:type schema:DefinedTerm
105 sg:grant.6742726 http://pending.schema.org/fundedItem sg:pub.10.1134/s1063782618100093
106 rdf:type schema:MonetaryGrant
107 sg:journal.1136692 schema:issn 1063-7826
108 1090-6479
109 schema:name Semiconductors
110 schema:publisher Pleiades Publishing
111 rdf:type schema:Periodical
112 sg:person.010536465737.08 schema:affiliation grid-institutes:grid.423485.c
113 schema:familyName Gordeev
114 schema:givenName N. Yu.
115 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010536465737.08
116 rdf:type schema:Person
117 sg:person.01114776037.19 schema:affiliation grid-institutes:grid.35135.31
118 schema:familyName Nadtochiy
119 schema:givenName A. M.
120 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01114776037.19
121 rdf:type schema:Person
122 sg:person.011315427765.17 schema:affiliation grid-institutes:grid.35135.31
123 schema:familyName Zhukov
124 schema:givenName A. E.
125 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011315427765.17
126 rdf:type schema:Person
127 sg:person.012211352412.34 schema:affiliation grid-institutes:grid.15447.33
128 schema:familyName Ustinov
129 schema:givenName V. M.
130 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012211352412.34
131 rdf:type schema:Person
132 sg:person.01260404165.29 schema:affiliation grid-institutes:grid.423485.c
133 schema:familyName Payusov
134 schema:givenName A. S.
135 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01260404165.29
136 rdf:type schema:Person
137 sg:person.014334030356.12 schema:affiliation grid-institutes:grid.4886.2
138 schema:familyName Vasil’ev
139 schema:givenName A. P.
140 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014334030356.12
141 rdf:type schema:Person
142 sg:person.014411372640.54 schema:affiliation grid-institutes:grid.423485.c
143 schema:familyName Shernyakov
144 schema:givenName Yu. M.
145 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014411372640.54
146 rdf:type schema:Person
147 sg:person.015106205514.66 schema:affiliation grid-institutes:grid.35135.31
148 schema:familyName Maximov
149 schema:givenName M. V.
150 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015106205514.66
151 rdf:type schema:Person
152 sg:person.015541716704.69 schema:affiliation grid-institutes:grid.423485.c
153 schema:familyName Serin
154 schema:givenName A. A.
155 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015541716704.69
156 rdf:type schema:Person
157 sg:pub.10.1038/nphoton.2016.21 schema:sameAs https://app.dimensions.ai/details/publication/pub.1014020736
158 https://doi.org/10.1038/nphoton.2016.21
159 rdf:type schema:CreativeWork
160 sg:pub.10.1134/1.1766381 schema:sameAs https://app.dimensions.ai/details/publication/pub.1041911429
161 https://doi.org/10.1134/1.1766381
162 rdf:type schema:CreativeWork
163 sg:pub.10.1134/s1063782611020187 schema:sameAs https://app.dimensions.ai/details/publication/pub.1006629101
164 https://doi.org/10.1134/s1063782611020187
165 rdf:type schema:CreativeWork
166 grid-institutes:grid.15447.33 schema:alternateName St. Petersburg Electrotechnical University “LETI”, 197376, St. Petersburg, Russia
167 schema:name St. Petersburg Electrotechnical University “LETI”, 197376, St. Petersburg, Russia
168 Submicron Heterostructures for Mircoelectronics, Research & Engineering Center, Russian Academy of Sciences, 194021, St. Petersburg, Russia
169 rdf:type schema:Organization
170 grid-institutes:grid.35135.31 schema:alternateName St. Petersburg Academic University, 194021, St. Petersburg, Russia
171 schema:name St. Petersburg Academic University, 194021, St. Petersburg, Russia
172 rdf:type schema:Organization
173 grid-institutes:grid.423485.c schema:alternateName Ioffe Institute, 194021, St. Petersburg, Russia
174 schema:name Ioffe Institute, 194021, St. Petersburg, Russia
175 rdf:type schema:Organization
176 grid-institutes:grid.4886.2 schema:alternateName Submicron Heterostructures for Mircoelectronics, Research & Engineering Center, Russian Academy of Sciences, 194021, St. Petersburg, Russia
177 schema:name Submicron Heterostructures for Mircoelectronics, Research & Engineering Center, Russian Academy of Sciences, 194021, St. Petersburg, Russia
178 rdf:type schema:Organization
 




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