Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-09-06

AUTHORS

W. V. Lundin, A. F. Tsatsulnikov, S. N. Rodin, A. V. Sakharov, S. O. Usov, M. I. Mitrofanov, I. V. Levitskii, V. P. Evtikhiev

ABSTRACT

The selective epitaxial growth of GaN by metalorganic vapor-phase epitaxy combined with ion-beam etching is investigated. To this end, partially masked GaN epitaxial layers are fabricated by depositing a thin Si3N4 layer onto the surface in a single technological process with the growth of GaN and the subsequent opening of windows of different shapes in this layer by an ion beam. Selective epitaxial growth regimes are studied. It is shown that, in a situation where the total area of the windows in the mask is small relative to the total area of the sample, the required epitaxy duration should be 5–10 s, which impairs the reproducibility of the parameters of the epitaxial process. It is also shown that the mechanism of the selective growth of submicrometer objects differs significantly from that for planar layers and selectively grown layers with dimensions of ~1 μm or greater. The effect of precursor (trimethylgallium and ammonia) fluxes on the character of selective epitaxy is examined. To investigate the possibilities of varying mask topology for fabricating model objects with regard to photonic crystals, the impact of the shape and orientation of the windows in the Si3N4 mask on the character of selective epitaxy is studied. More... »

PAGES

1357-1362

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s106378261810007x

DOI

http://dx.doi.org/10.1134/s106378261810007x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1106809913


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