Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes View Full Text


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Article Info

DATE

2018-09-06

AUTHORS

P. A. Ivanov, A. S. Potapov, M. F. Kudoyarov, T. P. Samsonova

ABSTRACT

The effect of low-dose proton irradiation (irradiation dose 1010–1.8 × 1011 cm–2) on the capacitance–voltage, forward current–voltage, and reverse-recovery characteristics of 4H-SiC p–no junction diodes is studied. Irradiation is performed with 1.8-MeV protons through a 10-μm-thick Ni-film (the proton energy and Ni-film thickness were chosen so that the projected proton range in silicon carbide is approximately equal to the p–no junction depth). It is shown that proton irradiation in the above doses (i) does not change the concentration of majority carriers, (ii) leads to a dramatic decrease in the lifetime of nonequilibrium carriers (at a low injection level) (by several tens of times at the highest irradiation dose), and (iii) decreases the reverse-recovery charge at a high injection level (by up to a factor of 3 at the highest irradiation dose). More... »

PAGES

1307-1310

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782618100056

DOI

http://dx.doi.org/10.1134/s1063782618100056

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1106802504


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