Ontology type: schema:ScholarlyArticle
2018-08-22
AUTHORSE. V. Kunitsyna, I. A. Andreev, G. G. Konovalov, E. V. Ivanov, A. A. Pivovarova, N. D. Il’inskaya, Yu. P. Yakovlev
ABSTRACTGaSb/GaAlAsSb uncooled photodiodes for the 1.1–1.85 μm spectral range are fabricated and studied. A unique method for the growth of GaSb from lead solution-melts makes it possible to obtain a low carrier concentration in the active region: n = 2 × 1015 cm–3. The capacitance of the photodiodes is 70–110 pF for a sensitive -area diameter of 300 μm and 150–250 pF for a diameter of 500 μm. The photodiodes are characterized by a high (for GaSb devices) spectral sensitivity Sλ = 0.95 A/W at the maximum, a relatively low reverse dark current density j = (4–9) × 10–3 A/cm2 at Urev = 1.0–2.0 V, and high-speed performance (response time 5–10 ns). More... »
PAGES1215-1220
http://scigraph.springernature.com/pub.10.1134/s1063782618090099
DOIhttp://dx.doi.org/10.1134/s1063782618090099
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