Influence of Isotropic Pressure on the Current–Voltage Characteristics of Surface-Barrier Diodes Sb–p-Si〈Mn〉–Au View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-08

AUTHORS

S. Zainabidinov, I. G. Tursunov, O. Khimmatkulov

ABSTRACT

The influence of hydrostatic pressure on the current–voltage characteristics of surface-barrier diode structures of the Sb–p-Si〈Mn〉–Au type are investigated. The potential-barrier height and the baric coefficient of its variation are found to be eϕδ = 0.75 eV and δ =–1.54 × 10–11 eV/Pa, respectively.

PAGES

1027-1030

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782618080262

DOI

http://dx.doi.org/10.1134/s1063782618080262

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1105320027


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