Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-07-06

AUTHORS

M. P. Mikhailova, I. A. Andreev, G. G. Konovalov, L. V. Danilov, E. V. Ivanov, E. V. Kunitsyna, N. D. Il’inskaya, R. V. Levin, B. V. Pushnyi, Yu. P. Yakovlev

ABSTRACT

Significant photocurrent/photoconductivity amplification is observed at low reverse biases in a type-II n-GaSb/InAs/p-GaSb heterostructure with a single quantum well (QW), grown by metal-organic vapor phase epitaxy. A sharp increase in the photocurrent by more than two orders of magnitude occurs under exposure of the heterostructure to monochromatic light with a wavelength of 1.2–1.6 μm (at 77 K) and the application of a reverse bias in the range 5–200 mV. The optical gain depends on the applied voltage and increases to 2.5 × 102 at a reverse bias of 800 mV. Theoretical analysis demonstrated that the main role in the phenomenon is played by the screening of the external electric field by electrons accumulated in the deep InAs QW and by the mechanism of the tunneling transport of carriers with a small effective mass. It is shown that the effect under study is common to both isotype and anisotype type-II heterojunctions, including structures with QWs and superlattices. More... »

PAGES

1037-1042

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782618080146

DOI

http://dx.doi.org/10.1134/s1063782618080146

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1105323409


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189 schema:name Ioffe Institute, 194021, St. Petersburg, Russia
190 rdf:type schema:Organization
 




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