Quasi-Classical Model of the Static Electrical Conductivity of Heavily Doped Degenerate Semiconductors at Low Temperatures View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2018-05-15

AUTHORS

N. A. Poklonski, S. A. Vyrko, A. N. Dzeraviaha

ABSTRACT

Germanium, silicon, gallium arsenide, and indium antimonide n-type crystals on the metal side of the insulator–metal transition (Mott transition) are considered. In the quasi-classical approximation, the static (direct current) electrical conductivity and the drift mobility of electrons of the c band, and electrostatic fluctuations of their potential energy and the mobility edge are calculated. It is considered that a single event of the elastic Coulomb scattering of a mobile electron occurs only in a spherical region of the crystal matrix with an impurity ion at the center. The results of calculations using the proposed formulas without using fitting parameters are numerically consistent with experimental data in a wide range of concentrations of hydrogenlike donors at their weak and moderate compensation by acceptors. More... »

PAGES

692-701

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782618060192

DOI

http://dx.doi.org/10.1134/s1063782618060192

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1104021754


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Belarusian State University, 220030, Minsk, Belarus", 
          "id": "http://www.grid.ac/institutes/grid.17678.3f", 
          "name": [
            "Belarusian State University, 220030, Minsk, Belarus"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Poklonski", 
        "givenName": "N. A.", 
        "id": "sg:person.015505352225.90", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015505352225.90"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Belarusian State University, 220030, Minsk, Belarus", 
          "id": "http://www.grid.ac/institutes/grid.17678.3f", 
          "name": [
            "Belarusian State University, 220030, Minsk, Belarus"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Vyrko", 
        "givenName": "S. A.", 
        "id": "sg:person.0742524034.73", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0742524034.73"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Belarusian State University, 220030, Minsk, Belarus", 
          "id": "http://www.grid.ac/institutes/grid.17678.3f", 
          "name": [
            "Belarusian State University, 220030, Minsk, Belarus"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Dzeraviaha", 
        "givenName": "A. N.", 
        "id": "sg:person.012267351302.44", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012267351302.44"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1007/978-3-540-85428-9", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1008447473", 
          "https://doi.org/10.1007/978-3-540-85428-9"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/978-3-642-18865-7", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1016936870", 
          "https://doi.org/10.1007/978-3-642-18865-7"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/1.1641133", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1000583462", 
          "https://doi.org/10.1134/1.1641133"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/bf00885032", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1037597883", 
          "https://doi.org/10.1007/bf00885032"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782616060191", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1007795197", 
          "https://doi.org/10.1134/s1063782616060191"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/bf01677931", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1045549768", 
          "https://doi.org/10.1007/bf01677931"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/1.1521229", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1007258165", 
          "https://doi.org/10.1134/1.1521229"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/978-3-642-03303-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1027891678", 
          "https://doi.org/10.1007/978-3-642-03303-2"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/978-3-662-02403-4", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1047888670", 
          "https://doi.org/10.1007/978-3-662-02403-4"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/978-0-387-47314-7", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1037490029", 
          "https://doi.org/10.1007/978-0-387-47314-7"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/1.1767252", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062736390", 
          "https://doi.org/10.1134/1.1767252"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/978-3-662-09855-4", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1014616730", 
          "https://doi.org/10.1007/978-3-662-09855-4"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1023/a:1019715602928", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1014162614", 
          "https://doi.org/10.1023/a:1019715602928"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2018-05-15", 
    "datePublishedReg": "2018-05-15", 
    "description": "Germanium, silicon, gallium arsenide, and indium antimonide n-type crystals on the metal side of the insulator\u2013metal transition (Mott transition) are considered. In the quasi-classical approximation, the static (direct current) electrical conductivity and the drift mobility of electrons of the c band, and electrostatic fluctuations of their potential energy and the mobility edge are calculated. It is considered that a single event of the elastic Coulomb scattering of a mobile electron occurs only in a spherical region of the crystal matrix with an impurity ion at the center. The results of calculations using the proposed formulas without using fitting parameters are numerically consistent with experimental data in a wide range of concentrations of hydrogenlike donors at their weak and moderate compensation by acceptors.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782618060192", 
    "inLanguage": "en", 
    "isAccessibleForFree": true, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "6", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "52"
      }
    ], 
    "keywords": [
      "static electrical conductivity", 
      "quasi-classical model", 
      "quasi-classical approximation", 
      "insulator-metal transition", 
      "electrostatic fluctuations", 
      "elastic Coulomb", 
      "degenerate semiconductors", 
      "mobile electrons", 
      "impurity ions", 
      "drift mobility", 
      "results of calculations", 
      "mobility edge", 
      "gallium arsenide", 
      "electrons", 
      "crystal matrix", 
      "fitting parameters", 
      "type crystals", 
      "potential energy", 
      "spherical region", 
      "metal side", 
      "experimental data", 
      "low temperature", 
      "moderate compensation", 
      "electrical conductivity", 
      "single event", 
      "semiconductors", 
      "germanium", 
      "Coulomb", 
      "arsenide", 
      "silicon", 
      "ions", 
      "crystals", 
      "energy", 
      "calculations", 
      "approximation", 
      "transition", 
      "conductivity", 
      "band", 
      "fluctuations", 
      "wide range", 
      "edge", 
      "formula", 
      "temperature", 
      "matrix", 
      "acceptor", 
      "parameters", 
      "range", 
      "model", 
      "mobility", 
      "region", 
      "compensation", 
      "center", 
      "results", 
      "side", 
      "data", 
      "donors", 
      "concentration", 
      "events"
    ], 
    "name": "Quasi-Classical Model of the Static Electrical Conductivity of Heavily Doped Degenerate Semiconductors at Low Temperatures", 
    "pagination": "692-701", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1104021754"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782618060192"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782618060192", 
      "https://app.dimensions.ai/details/publication/pub.1104021754"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-20T07:34", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_765.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782618060192"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782618060192'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782618060192'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782618060192'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782618060192'


 

This table displays all metadata directly associated to this object as RDF triples.

186 TRIPLES      22 PREDICATES      97 URIs      75 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782618060192 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author N2d980a417aa64ce884f0f9ee15e5f461
5 schema:citation sg:pub.10.1007/978-0-387-47314-7
6 sg:pub.10.1007/978-3-540-85428-9
7 sg:pub.10.1007/978-3-642-03303-2
8 sg:pub.10.1007/978-3-642-18865-7
9 sg:pub.10.1007/978-3-662-02403-4
10 sg:pub.10.1007/978-3-662-09855-4
11 sg:pub.10.1007/bf00885032
12 sg:pub.10.1007/bf01677931
13 sg:pub.10.1023/a:1019715602928
14 sg:pub.10.1134/1.1521229
15 sg:pub.10.1134/1.1641133
16 sg:pub.10.1134/1.1767252
17 sg:pub.10.1134/s1063782616060191
18 schema:datePublished 2018-05-15
19 schema:datePublishedReg 2018-05-15
20 schema:description Germanium, silicon, gallium arsenide, and indium antimonide n-type crystals on the metal side of the insulator–metal transition (Mott transition) are considered. In the quasi-classical approximation, the static (direct current) electrical conductivity and the drift mobility of electrons of the c band, and electrostatic fluctuations of their potential energy and the mobility edge are calculated. It is considered that a single event of the elastic Coulomb scattering of a mobile electron occurs only in a spherical region of the crystal matrix with an impurity ion at the center. The results of calculations using the proposed formulas without using fitting parameters are numerically consistent with experimental data in a wide range of concentrations of hydrogenlike donors at their weak and moderate compensation by acceptors.
21 schema:genre article
22 schema:inLanguage en
23 schema:isAccessibleForFree true
24 schema:isPartOf N7432ea5e0dda430b979038987bd991a1
25 Nc3945f70e36c4dc4aa937a1578e24c07
26 sg:journal.1136692
27 schema:keywords Coulomb
28 acceptor
29 approximation
30 arsenide
31 band
32 calculations
33 center
34 compensation
35 concentration
36 conductivity
37 crystal matrix
38 crystals
39 data
40 degenerate semiconductors
41 donors
42 drift mobility
43 edge
44 elastic Coulomb
45 electrical conductivity
46 electrons
47 electrostatic fluctuations
48 energy
49 events
50 experimental data
51 fitting parameters
52 fluctuations
53 formula
54 gallium arsenide
55 germanium
56 impurity ions
57 insulator-metal transition
58 ions
59 low temperature
60 matrix
61 metal side
62 mobile electrons
63 mobility
64 mobility edge
65 model
66 moderate compensation
67 parameters
68 potential energy
69 quasi-classical approximation
70 quasi-classical model
71 range
72 region
73 results
74 results of calculations
75 semiconductors
76 side
77 silicon
78 single event
79 spherical region
80 static electrical conductivity
81 temperature
82 transition
83 type crystals
84 wide range
85 schema:name Quasi-Classical Model of the Static Electrical Conductivity of Heavily Doped Degenerate Semiconductors at Low Temperatures
86 schema:pagination 692-701
87 schema:productId N5573e6c4768a43c9aee8bef3648e9634
88 Na326479fadfc47d8b22507d6e398d1d6
89 schema:sameAs https://app.dimensions.ai/details/publication/pub.1104021754
90 https://doi.org/10.1134/s1063782618060192
91 schema:sdDatePublished 2022-05-20T07:34
92 schema:sdLicense https://scigraph.springernature.com/explorer/license/
93 schema:sdPublisher N8581c0ab5a684a4698a6896a36cc0161
94 schema:url https://doi.org/10.1134/s1063782618060192
95 sgo:license sg:explorer/license/
96 sgo:sdDataset articles
97 rdf:type schema:ScholarlyArticle
98 N00b957520ea8406ca390005f209e332c rdf:first sg:person.0742524034.73
99 rdf:rest N035a85243d7c49a198e77c6fa5ef6b27
100 N035a85243d7c49a198e77c6fa5ef6b27 rdf:first sg:person.012267351302.44
101 rdf:rest rdf:nil
102 N2d980a417aa64ce884f0f9ee15e5f461 rdf:first sg:person.015505352225.90
103 rdf:rest N00b957520ea8406ca390005f209e332c
104 N5573e6c4768a43c9aee8bef3648e9634 schema:name dimensions_id
105 schema:value pub.1104021754
106 rdf:type schema:PropertyValue
107 N7432ea5e0dda430b979038987bd991a1 schema:volumeNumber 52
108 rdf:type schema:PublicationVolume
109 N8581c0ab5a684a4698a6896a36cc0161 schema:name Springer Nature - SN SciGraph project
110 rdf:type schema:Organization
111 Na326479fadfc47d8b22507d6e398d1d6 schema:name doi
112 schema:value 10.1134/s1063782618060192
113 rdf:type schema:PropertyValue
114 Nc3945f70e36c4dc4aa937a1578e24c07 schema:issueNumber 6
115 rdf:type schema:PublicationIssue
116 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
117 schema:name Physical Sciences
118 rdf:type schema:DefinedTerm
119 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
120 schema:name Condensed Matter Physics
121 rdf:type schema:DefinedTerm
122 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
123 schema:name Quantum Physics
124 rdf:type schema:DefinedTerm
125 sg:journal.1136692 schema:issn 1063-7826
126 1090-6479
127 schema:name Semiconductors
128 schema:publisher Pleiades Publishing
129 rdf:type schema:Periodical
130 sg:person.012267351302.44 schema:affiliation grid-institutes:grid.17678.3f
131 schema:familyName Dzeraviaha
132 schema:givenName A. N.
133 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012267351302.44
134 rdf:type schema:Person
135 sg:person.015505352225.90 schema:affiliation grid-institutes:grid.17678.3f
136 schema:familyName Poklonski
137 schema:givenName N. A.
138 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015505352225.90
139 rdf:type schema:Person
140 sg:person.0742524034.73 schema:affiliation grid-institutes:grid.17678.3f
141 schema:familyName Vyrko
142 schema:givenName S. A.
143 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0742524034.73
144 rdf:type schema:Person
145 sg:pub.10.1007/978-0-387-47314-7 schema:sameAs https://app.dimensions.ai/details/publication/pub.1037490029
146 https://doi.org/10.1007/978-0-387-47314-7
147 rdf:type schema:CreativeWork
148 sg:pub.10.1007/978-3-540-85428-9 schema:sameAs https://app.dimensions.ai/details/publication/pub.1008447473
149 https://doi.org/10.1007/978-3-540-85428-9
150 rdf:type schema:CreativeWork
151 sg:pub.10.1007/978-3-642-03303-2 schema:sameAs https://app.dimensions.ai/details/publication/pub.1027891678
152 https://doi.org/10.1007/978-3-642-03303-2
153 rdf:type schema:CreativeWork
154 sg:pub.10.1007/978-3-642-18865-7 schema:sameAs https://app.dimensions.ai/details/publication/pub.1016936870
155 https://doi.org/10.1007/978-3-642-18865-7
156 rdf:type schema:CreativeWork
157 sg:pub.10.1007/978-3-662-02403-4 schema:sameAs https://app.dimensions.ai/details/publication/pub.1047888670
158 https://doi.org/10.1007/978-3-662-02403-4
159 rdf:type schema:CreativeWork
160 sg:pub.10.1007/978-3-662-09855-4 schema:sameAs https://app.dimensions.ai/details/publication/pub.1014616730
161 https://doi.org/10.1007/978-3-662-09855-4
162 rdf:type schema:CreativeWork
163 sg:pub.10.1007/bf00885032 schema:sameAs https://app.dimensions.ai/details/publication/pub.1037597883
164 https://doi.org/10.1007/bf00885032
165 rdf:type schema:CreativeWork
166 sg:pub.10.1007/bf01677931 schema:sameAs https://app.dimensions.ai/details/publication/pub.1045549768
167 https://doi.org/10.1007/bf01677931
168 rdf:type schema:CreativeWork
169 sg:pub.10.1023/a:1019715602928 schema:sameAs https://app.dimensions.ai/details/publication/pub.1014162614
170 https://doi.org/10.1023/a:1019715602928
171 rdf:type schema:CreativeWork
172 sg:pub.10.1134/1.1521229 schema:sameAs https://app.dimensions.ai/details/publication/pub.1007258165
173 https://doi.org/10.1134/1.1521229
174 rdf:type schema:CreativeWork
175 sg:pub.10.1134/1.1641133 schema:sameAs https://app.dimensions.ai/details/publication/pub.1000583462
176 https://doi.org/10.1134/1.1641133
177 rdf:type schema:CreativeWork
178 sg:pub.10.1134/1.1767252 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062736390
179 https://doi.org/10.1134/1.1767252
180 rdf:type schema:CreativeWork
181 sg:pub.10.1134/s1063782616060191 schema:sameAs https://app.dimensions.ai/details/publication/pub.1007795197
182 https://doi.org/10.1134/s1063782616060191
183 rdf:type schema:CreativeWork
184 grid-institutes:grid.17678.3f schema:alternateName Belarusian State University, 220030, Minsk, Belarus
185 schema:name Belarusian State University, 220030, Minsk, Belarus
186 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...