Ontology type: schema:ScholarlyArticle
2018-04-17
AUTHORSS. N. Timoshnev, A. M. Mizerov, M. S. Sobolev, E. V. Nikitina
ABSTRACTThe studies of the growth kinetics of GaN layers grown on nitridated Si(111) substrates by plasmaassisted molecular beam epitaxy are presented. The nucleation and overgrowth of the separate GaN/Si(111) nanocolumns during single growth run is demonstrated. The technique of the in situ control of the GaN/Si(111) nanocolumns lateral size is proposed. More... »
PAGES660-663
http://scigraph.springernature.com/pub.10.1134/s1063782618050342
DOIhttp://dx.doi.org/10.1134/s1063782618050342
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