Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy View Full Text


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Article Info

DATE

2018-04-17

AUTHORS

S. N. Timoshnev, A. M. Mizerov, M. S. Sobolev, E. V. Nikitina

ABSTRACT

The studies of the growth kinetics of GaN layers grown on nitridated Si(111) substrates by plasmaassisted molecular beam epitaxy are presented. The nucleation and overgrowth of the separate GaN/Si(111) nanocolumns during single growth run is demonstrated. The technique of the in situ control of the GaN/Si(111) nanocolumns lateral size is proposed. More... »

PAGES

660-663

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782618050342

DOI

http://dx.doi.org/10.1134/s1063782618050342

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1103415000


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