Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-04-17

AUTHORS

V. N. Jmerik, T. V. Shubina, D. V. Nechaev, A. N. Semenov, D. A. Kirilenko, V. Yu. Davydov, A. N. Smirnov, I. A. Eliseev, G. Posina, S. V. Ivanov

ABSTRACT

We report on a new approach to fabricate regular arrays of GaN nanorods (NRs) with InGaN QWs by plasma-assisted molecular-beam epitaxy (PA MBE) on micro-cone patterned sapphire substrates (μ-CPSSs). A two-stage PA MBE fabrication process of GaN NRs has been developed, starting with a high temperature nucleation layer growth at metal-rich conditions to aggregate selectively GaN nucleus on c-oriented areas of the μ-CPSSs and followed by growth of 1-μm-thick GaN NRs at strongly nitrogen-rich conditions exactly on the cone tips. These results are explained by energetically favorable GaN growth on the (000-) oriented sapphire surface. Both micro-photoluminescence and micro-cathodoluminescence confirm the formation of regular array of optically and spectrally isolated NRs without usage of any nanolithography. More... »

PAGES

667-670

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782618050123

DOI

http://dx.doi.org/10.1134/s1063782618050123

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1103402565


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