Resistance Switching in Ag, Au, and Cu Films at the Percolation Threshold View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-05

AUTHORS

I. A. Gladskikh, M. G. Gushchin, T. A. Vartanyan

ABSTRACT

A straightforward method for thin metal films production and bringing them at the percolation threshold has been developed. The method is based on the controlled thermal annealing of initially conductive metal films. Electrical conductivity studies of thin silver, gold, and copper films at the percolation threshold revealed the existence of high-resistance states (1012 Ω) and low-resistance states (103 Ω) of the films. The switching between these states under bias is reversible. The characteristic switching times are 200 ns, 2 μs, and 60 μs for silver, gold, and copper films, correspondently. More... »

PAGES

671-674

Journal

TITLE

Semiconductors

ISSUE

5

VOLUME

52

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782618050093

DOI

http://dx.doi.org/10.1134/s1063782618050093

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1103411582


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