Optimal Doping of Diode Current Interrupters View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2018-03

AUTHORS

A. S. Kyuregyan

ABSTRACT

An analytical solution to the problem of a decrease in energy losses Ω in diode current interrupters is derived for the stage of recovery of the blocking ability due to optimization of the dopant distribution N(x) over the structure thickness. The distribution N(x) close to optimal is found; it makes it possible to decrease Ω by 30–55% compared with standard design interrupters with homogeneously doped high-resistivity layers. More... »

PAGES

341-347

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782618030144

DOI

http://dx.doi.org/10.1134/s1063782618030144

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1101514239


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0103", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Numerical and Computational Mathematics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/01", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Mathematical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "All-Russian Electrotechnical Institute named after V.I.Lenin", 
          "id": "https://www.grid.ac/institutes/grid.469895.f", 
          "name": [
            "All-Russia Electrical Engineering Institute, 111250, Moscow, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kyuregyan", 
        "givenName": "A. S.", 
        "id": "sg:person.01204731551.81", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01204731551.81"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/1.1994972", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1006276853", 
          "https://doi.org/10.1134/1.1994972"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/1.1767881", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1046051827", 
          "https://doi.org/10.1134/1.1767881"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/1.1610132", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1048436237", 
          "https://doi.org/10.1134/1.1610132"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1070/pu2005v048n07abeh002471", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1058173770"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/proc.1967.5834", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061439279"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2018-03", 
    "datePublishedReg": "2018-03-01", 
    "description": "An analytical solution to the problem of a decrease in energy losses \u03a9 in diode current interrupters is derived for the stage of recovery of the blocking ability due to optimization of the dopant distribution N(x) over the structure thickness. The distribution N(x) close to optimal is found; it makes it possible to decrease \u03a9 by 30\u201355% compared with standard design interrupters with homogeneously doped high-resistivity layers.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1134/s1063782618030144", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": true, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "3", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "52"
      }
    ], 
    "name": "Optimal Doping of Diode Current Interrupters", 
    "pagination": "341-347", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "dfc81980bc63b43c56b030284b83c9cd0431485ff5040b6b5400ca9e78471b1f"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782618030144"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1101514239"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782618030144", 
      "https://app.dimensions.ai/details/publication/pub.1101514239"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-11T11:32", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000357_0000000357/records_99323_00000001.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://link.springer.com/10.1134%2FS1063782618030144"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782618030144'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782618030144'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782618030144'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782618030144'


 

This table displays all metadata directly associated to this object as RDF triples.

79 TRIPLES      21 PREDICATES      32 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782618030144 schema:about anzsrc-for:01
2 anzsrc-for:0103
3 schema:author N89c6918b66374455a53d31270bf89549
4 schema:citation sg:pub.10.1134/1.1610132
5 sg:pub.10.1134/1.1767881
6 sg:pub.10.1134/1.1994972
7 https://doi.org/10.1070/pu2005v048n07abeh002471
8 https://doi.org/10.1109/proc.1967.5834
9 schema:datePublished 2018-03
10 schema:datePublishedReg 2018-03-01
11 schema:description An analytical solution to the problem of a decrease in energy losses Ω in diode current interrupters is derived for the stage of recovery of the blocking ability due to optimization of the dopant distribution N(x) over the structure thickness. The distribution N(x) close to optimal is found; it makes it possible to decrease Ω by 30–55% compared with standard design interrupters with homogeneously doped high-resistivity layers.
12 schema:genre research_article
13 schema:inLanguage en
14 schema:isAccessibleForFree true
15 schema:isPartOf N171a4315ddda4bb49ddd179a2c19f9cd
16 Nc6a9b3fac7f0482388e1094452cb73eb
17 sg:journal.1136692
18 schema:name Optimal Doping of Diode Current Interrupters
19 schema:pagination 341-347
20 schema:productId N4d1b159f88f94a41b7c8ee810fa42644
21 Nd94e59d78b334412b2368507381f450d
22 Nececaa32ea584a0588b0c8d23099e9ea
23 schema:sameAs https://app.dimensions.ai/details/publication/pub.1101514239
24 https://doi.org/10.1134/s1063782618030144
25 schema:sdDatePublished 2019-04-11T11:32
26 schema:sdLicense https://scigraph.springernature.com/explorer/license/
27 schema:sdPublisher Nec44bf404d8340f8a2c5bafce64aa3b9
28 schema:url https://link.springer.com/10.1134%2FS1063782618030144
29 sgo:license sg:explorer/license/
30 sgo:sdDataset articles
31 rdf:type schema:ScholarlyArticle
32 N171a4315ddda4bb49ddd179a2c19f9cd schema:issueNumber 3
33 rdf:type schema:PublicationIssue
34 N4d1b159f88f94a41b7c8ee810fa42644 schema:name dimensions_id
35 schema:value pub.1101514239
36 rdf:type schema:PropertyValue
37 N89c6918b66374455a53d31270bf89549 rdf:first sg:person.01204731551.81
38 rdf:rest rdf:nil
39 Nc6a9b3fac7f0482388e1094452cb73eb schema:volumeNumber 52
40 rdf:type schema:PublicationVolume
41 Nd94e59d78b334412b2368507381f450d schema:name doi
42 schema:value 10.1134/s1063782618030144
43 rdf:type schema:PropertyValue
44 Nec44bf404d8340f8a2c5bafce64aa3b9 schema:name Springer Nature - SN SciGraph project
45 rdf:type schema:Organization
46 Nececaa32ea584a0588b0c8d23099e9ea schema:name readcube_id
47 schema:value dfc81980bc63b43c56b030284b83c9cd0431485ff5040b6b5400ca9e78471b1f
48 rdf:type schema:PropertyValue
49 anzsrc-for:01 schema:inDefinedTermSet anzsrc-for:
50 schema:name Mathematical Sciences
51 rdf:type schema:DefinedTerm
52 anzsrc-for:0103 schema:inDefinedTermSet anzsrc-for:
53 schema:name Numerical and Computational Mathematics
54 rdf:type schema:DefinedTerm
55 sg:journal.1136692 schema:issn 1063-7826
56 1090-6479
57 schema:name Semiconductors
58 rdf:type schema:Periodical
59 sg:person.01204731551.81 schema:affiliation https://www.grid.ac/institutes/grid.469895.f
60 schema:familyName Kyuregyan
61 schema:givenName A. S.
62 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01204731551.81
63 rdf:type schema:Person
64 sg:pub.10.1134/1.1610132 schema:sameAs https://app.dimensions.ai/details/publication/pub.1048436237
65 https://doi.org/10.1134/1.1610132
66 rdf:type schema:CreativeWork
67 sg:pub.10.1134/1.1767881 schema:sameAs https://app.dimensions.ai/details/publication/pub.1046051827
68 https://doi.org/10.1134/1.1767881
69 rdf:type schema:CreativeWork
70 sg:pub.10.1134/1.1994972 schema:sameAs https://app.dimensions.ai/details/publication/pub.1006276853
71 https://doi.org/10.1134/1.1994972
72 rdf:type schema:CreativeWork
73 https://doi.org/10.1070/pu2005v048n07abeh002471 schema:sameAs https://app.dimensions.ai/details/publication/pub.1058173770
74 rdf:type schema:CreativeWork
75 https://doi.org/10.1109/proc.1967.5834 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061439279
76 rdf:type schema:CreativeWork
77 https://www.grid.ac/institutes/grid.469895.f schema:alternateName All-Russian Electrotechnical Institute named after V.I.Lenin
78 schema:name All-Russia Electrical Engineering Institute, 111250, Moscow, Russia
79 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...