Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-01

AUTHORS

S. A. Blokhin, M. A. Bobrov, A. A. Blokhin, A. G. Kuzmenkov, A. P. Vasil’ev, Yu. M. Zadiranov, E. A. Evropeytsev, A. V. Sakharov, N. N. Ledentsov, L. Ya. Karachinsky, A. M. Ospennikov, N. A. Maleev, V. M. Ustinov

ABSTRACT

The emission-line width for 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells is studied. The width of the emission line for a laser with a 2-μm oxide current aperture attains it minimum (~110 MHz) at an output power of 0.8 mW. As the optical output power is further increased, anomalous broadening of the emission line is observed; this is apparently caused by an increase in the α-factor as a result of a decrease in the differential gain in the active region under conditions of increased concentration of charge carriers and of high internal optical losses in the microcavity. The α-factor is estimated using two independent methods. More... »

PAGES

93-99

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782618010062

DOI

http://dx.doi.org/10.1134/s1063782618010062

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1101041990


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