Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2017-11-03

AUTHORS

N. A. Maleev, V. A. Belyakov, A. P. Vasil’ev, M. A. Bobrov, S. A. Blokhin, M. M. Kulagina, A. G. Kuzmenkov, V. N. Nevedomskii, Yu. A. Guseva, S. N. Maleev, I. V. Ladenkov, E. L. Fefelova, A. G. Fefelov, V. M. Ustinov

ABSTRACT

The molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors is studied and optimized. The choice of the substrate-holder temperature, growth rate and III/V ratio in the synthesis of individual heterostructure regions, the thickness of AlAs inserts and barrier-layer quality are critical parameters to achieve the optimal characteristics of heterobarrier varactors. The proposed triple-barrier structures of heterobarrier varactors with thin InGaAs strained layers immediately adjacent to an InAlAs/AlAs/InAlAs heterobarrier, mismatched with respect to the InP lattice constant at an AlAs insert thickness of 2.5 nm, provides a leakage current density at the level of the best values for heterobarrier varactor structures with 12 barriers and an insert thickness of 3 nm. More... »

PAGES

1431-1434

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782617110185

DOI

http://dx.doi.org/10.1134/s1063782617110185

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1092506442


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