On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP ... View Full Text


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Article Info

DATE

2017-10-07

AUTHORS

F. I. Zubov, E. S. Semenova, I. V. Kulkova, K. Yvind, N. V. Kryzhanovskaya, M. V. Maximov, A. E. Zhukov

ABSTRACT

We report on a study of lasers with an emission wavelength of about 1.5 μm and high temperature stability, synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer are used as the active region of the laser. A quaternary InGaAsP solid solution with a band-gap width of 1.15 eV serves as the waveguide/matrix layer. A high characteristic temperature of the threshold current, T0 = 205 K, is reached in the temperature range 20–50°C in ridge-waveguide laser diodes. A correlation between the values of T0 and the band-gap width of the waveguide layers is found. More... »

PAGES

1332-1336

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782617100207

DOI

http://dx.doi.org/10.1134/s1063782617100207

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1092113829


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