High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: II. Energy efficiency View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2017-09

AUTHORS

A. S. Kyuregyan

ABSTRACT

The energy efficiency of optoelectronic switches based on high-voltage silicon photodiodes, phototransistors, and photothyristors controlled by picosecond laser pulses during the formation of voltage pulses on resistive load RL is studied for the first time. It is shown that at the given values of the resistive load RL, pulse amplitude UR and duration tR, there exist optimum device areas, energies, and absorbances of control radiation providing a maximum total switch efficiency of ~0.92. All three switch types feature almost the same efficiency at short tR; at longer tR, photothyristors have a noticeable advantage. More... »

PAGES

1214-1217

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782617090135

DOI

http://dx.doi.org/10.1134/s1063782617090135

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1091422785


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