High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: I. Physics of the switching process View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2017-09

AUTHORS

A. S. Kyuregyan

ABSTRACT

The switching of high-voltage silicon photodiodes, phototransistors, and photothyristors exposed to picosecond laser pulses quasi-homogeneous over illumination area is numerically simulated for the first time. An analysis of the results makes it possible to obtain “empirical” relations between the main switch parameters (energy of control pulses, light absorbance, and structure area) and the parameters characterizing the switching transition process in a circuit with resistive load. For some of these relations, approximate analytical formulas well describing the simulation results are derived. It is noted that the differences between switching processes in three types of structures appears only at long pulses at the final stage, when the blocking capability of photodiodes and phototransistors is recovered. More... »

PAGES

1208-1213

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782617090123

DOI

http://dx.doi.org/10.1134/s1063782617090123

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1091426813


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