Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2017-08

AUTHORS

T. T. Mnatsakanov, A. G. Tandoev, M. E. Levinshtein, S. N. Yurkov, J. W. Palmour

ABSTRACT

An analytical expression is derived for the current–voltage characteristic of a Schottky diode at a high injection level of minority carriers. It is shown that, even at very high current densities, the higher the base doping level, the larger the voltage drop across the diode. The physical mechanism responsible for this “paradoxical” result is analyzed. The validity of the analytical result is confirmed by a numerical calculation with software that takes into account the whole set of nonlinear effects caused by a high injection level in the base layer and by heavy doping of the emitter region. More... »

PAGES

1081-1086

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782617080231

DOI

http://dx.doi.org/10.1134/s1063782617080231

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1091324445


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0301", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Analytical Chemistry", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/03", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Chemical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "All-Russian Electrotechnical Institute named after V.I.Lenin", 
          "id": "https://www.grid.ac/institutes/grid.469895.f", 
          "name": [
            "All-Russia Electrotechnical Institute, 111250, Moscow, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mnatsakanov", 
        "givenName": "T. T.", 
        "id": "sg:person.014522340505.49", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014522340505.49"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "All-Russian Electrotechnical Institute named after V.I.Lenin", 
          "id": "https://www.grid.ac/institutes/grid.469895.f", 
          "name": [
            "All-Russia Electrotechnical Institute, 111250, Moscow, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tandoev", 
        "givenName": "A. G.", 
        "id": "sg:person.016100723201.13", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016100723201.13"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Levinshtein", 
        "givenName": "M. E.", 
        "id": "sg:person.013715361533.07", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013715361533.07"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "All-Russian Electrotechnical Institute named after V.I.Lenin", 
          "id": "https://www.grid.ac/institutes/grid.469895.f", 
          "name": [
            "All-Russia Electrotechnical Institute, 111250, Moscow, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Yurkov", 
        "givenName": "S. N.", 
        "id": "sg:person.010426143615.24", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010426143615.24"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "name": [
            "Wolfspeed, A Cree Company, 3026 East Cornwallis Rd., Research Triangle Park, 27709, New York, NC, USA"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Palmour", 
        "givenName": "J. W.", 
        "id": "sg:person.012013341615.29", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012013341615.29"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1088/0268-1242/24/7/075006", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1003606182"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1088/0268-1242/24/7/075006", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1003606182"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/pssa.200925339", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1004395816"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/pssa.200925339", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1004395816"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(90)90007-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1005596723"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(90)90007-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1005596723"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.sse.2008.08.002", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1018013900"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(85)90023-1", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1020496932"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(85)90023-1", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1020496932"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(69)90027-6", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1022312189"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(69)90027-6", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1022312189"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(87)90215-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1027805422"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(87)90215-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1027805422"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(65)90146-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1031057668"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(65)90146-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1031057668"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.sse.2004.05.077", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1036555888"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1088/0022-3727/48/23/235103", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1042308283"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1088/0268-1242/23/8/085011", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1043804628"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/pssb.2221430124", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1047623963"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.sse.2016.04.004", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1050330403"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.3081642", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057910986"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/ted.2002.804715", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061590716"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/ted.2011.2181390", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061594810"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1142/9789812773371_0004", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1088766855"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2017-08", 
    "datePublishedReg": "2017-08-01", 
    "description": "An analytical expression is derived for the current\u2013voltage characteristic of a Schottky diode at a high injection level of minority carriers. It is shown that, even at very high current densities, the higher the base doping level, the larger the voltage drop across the diode. The physical mechanism responsible for this \u201cparadoxical\u201d result is analyzed. The validity of the analytical result is confirmed by a numerical calculation with software that takes into account the whole set of nonlinear effects caused by a high injection level in the base layer and by heavy doping of the emitter region.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1134/s1063782617080231", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "8", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "51"
      }
    ], 
    "name": "Current\u2013voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers", 
    "pagination": "1081-1086", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "5e2d5ceb849b8bb20dffac8703bc74f9ea06ff6e0f9864ee349cc1595e814c71"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782617080231"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1091324445"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782617080231", 
      "https://app.dimensions.ai/details/publication/pub.1091324445"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-10T17:27", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8672_00000493.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1134/S1063782617080231"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782617080231'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782617080231'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782617080231'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782617080231'


 

This table displays all metadata directly associated to this object as RDF triples.

145 TRIPLES      21 PREDICATES      44 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782617080231 schema:about anzsrc-for:03
2 anzsrc-for:0301
3 schema:author Nd81870bb914241e4b7798297e1ee52bf
4 schema:citation https://doi.org/10.1002/pssa.200925339
5 https://doi.org/10.1002/pssb.2221430124
6 https://doi.org/10.1016/0038-1101(65)90146-2
7 https://doi.org/10.1016/0038-1101(69)90027-6
8 https://doi.org/10.1016/0038-1101(85)90023-1
9 https://doi.org/10.1016/0038-1101(87)90215-2
10 https://doi.org/10.1016/0038-1101(90)90007-2
11 https://doi.org/10.1016/j.sse.2004.05.077
12 https://doi.org/10.1016/j.sse.2008.08.002
13 https://doi.org/10.1016/j.sse.2016.04.004
14 https://doi.org/10.1063/1.3081642
15 https://doi.org/10.1088/0022-3727/48/23/235103
16 https://doi.org/10.1088/0268-1242/23/8/085011
17 https://doi.org/10.1088/0268-1242/24/7/075006
18 https://doi.org/10.1109/ted.2002.804715
19 https://doi.org/10.1109/ted.2011.2181390
20 https://doi.org/10.1142/9789812773371_0004
21 schema:datePublished 2017-08
22 schema:datePublishedReg 2017-08-01
23 schema:description An analytical expression is derived for the current–voltage characteristic of a Schottky diode at a high injection level of minority carriers. It is shown that, even at very high current densities, the higher the base doping level, the larger the voltage drop across the diode. The physical mechanism responsible for this “paradoxical” result is analyzed. The validity of the analytical result is confirmed by a numerical calculation with software that takes into account the whole set of nonlinear effects caused by a high injection level in the base layer and by heavy doping of the emitter region.
24 schema:genre research_article
25 schema:inLanguage en
26 schema:isAccessibleForFree false
27 schema:isPartOf N33f83c61c2154fb5a7cf35cf5fd0f752
28 Nd02ccb5df2db462c95112c9645c042bc
29 sg:journal.1136692
30 schema:name Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers
31 schema:pagination 1081-1086
32 schema:productId N2a8648036c8d4ff98d5b17a9fd908d93
33 N56962d9c32fa45b7913d342cb6f392cd
34 Na566a12325674ca3a9f0327f88b4720c
35 schema:sameAs https://app.dimensions.ai/details/publication/pub.1091324445
36 https://doi.org/10.1134/s1063782617080231
37 schema:sdDatePublished 2019-04-10T17:27
38 schema:sdLicense https://scigraph.springernature.com/explorer/license/
39 schema:sdPublisher Na97619004c4744849fbd71515e6c64db
40 schema:url http://link.springer.com/10.1134/S1063782617080231
41 sgo:license sg:explorer/license/
42 sgo:sdDataset articles
43 rdf:type schema:ScholarlyArticle
44 N2a8648036c8d4ff98d5b17a9fd908d93 schema:name readcube_id
45 schema:value 5e2d5ceb849b8bb20dffac8703bc74f9ea06ff6e0f9864ee349cc1595e814c71
46 rdf:type schema:PropertyValue
47 N33f83c61c2154fb5a7cf35cf5fd0f752 schema:volumeNumber 51
48 rdf:type schema:PublicationVolume
49 N3b40de52fdd4414b9f8d9cd52100bcfe rdf:first sg:person.010426143615.24
50 rdf:rest Na754c127ea884cb68ed1d220ff71def2
51 N41617f62017943979c24270c3490ff6c schema:name Wolfspeed, A Cree Company, 3026 East Cornwallis Rd., Research Triangle Park, 27709, New York, NC, USA
52 rdf:type schema:Organization
53 N56962d9c32fa45b7913d342cb6f392cd schema:name doi
54 schema:value 10.1134/s1063782617080231
55 rdf:type schema:PropertyValue
56 N632aaa76d68648e98650dd36a025a76c rdf:first sg:person.016100723201.13
57 rdf:rest Nac88559287e843a0ad69417196e2cfd3
58 Na566a12325674ca3a9f0327f88b4720c schema:name dimensions_id
59 schema:value pub.1091324445
60 rdf:type schema:PropertyValue
61 Na754c127ea884cb68ed1d220ff71def2 rdf:first sg:person.012013341615.29
62 rdf:rest rdf:nil
63 Na97619004c4744849fbd71515e6c64db schema:name Springer Nature - SN SciGraph project
64 rdf:type schema:Organization
65 Nac88559287e843a0ad69417196e2cfd3 rdf:first sg:person.013715361533.07
66 rdf:rest N3b40de52fdd4414b9f8d9cd52100bcfe
67 Nd02ccb5df2db462c95112c9645c042bc schema:issueNumber 8
68 rdf:type schema:PublicationIssue
69 Nd81870bb914241e4b7798297e1ee52bf rdf:first sg:person.014522340505.49
70 rdf:rest N632aaa76d68648e98650dd36a025a76c
71 anzsrc-for:03 schema:inDefinedTermSet anzsrc-for:
72 schema:name Chemical Sciences
73 rdf:type schema:DefinedTerm
74 anzsrc-for:0301 schema:inDefinedTermSet anzsrc-for:
75 schema:name Analytical Chemistry
76 rdf:type schema:DefinedTerm
77 sg:journal.1136692 schema:issn 1063-7826
78 1090-6479
79 schema:name Semiconductors
80 rdf:type schema:Periodical
81 sg:person.010426143615.24 schema:affiliation https://www.grid.ac/institutes/grid.469895.f
82 schema:familyName Yurkov
83 schema:givenName S. N.
84 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010426143615.24
85 rdf:type schema:Person
86 sg:person.012013341615.29 schema:affiliation N41617f62017943979c24270c3490ff6c
87 schema:familyName Palmour
88 schema:givenName J. W.
89 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012013341615.29
90 rdf:type schema:Person
91 sg:person.013715361533.07 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
92 schema:familyName Levinshtein
93 schema:givenName M. E.
94 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013715361533.07
95 rdf:type schema:Person
96 sg:person.014522340505.49 schema:affiliation https://www.grid.ac/institutes/grid.469895.f
97 schema:familyName Mnatsakanov
98 schema:givenName T. T.
99 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014522340505.49
100 rdf:type schema:Person
101 sg:person.016100723201.13 schema:affiliation https://www.grid.ac/institutes/grid.469895.f
102 schema:familyName Tandoev
103 schema:givenName A. G.
104 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016100723201.13
105 rdf:type schema:Person
106 https://doi.org/10.1002/pssa.200925339 schema:sameAs https://app.dimensions.ai/details/publication/pub.1004395816
107 rdf:type schema:CreativeWork
108 https://doi.org/10.1002/pssb.2221430124 schema:sameAs https://app.dimensions.ai/details/publication/pub.1047623963
109 rdf:type schema:CreativeWork
110 https://doi.org/10.1016/0038-1101(65)90146-2 schema:sameAs https://app.dimensions.ai/details/publication/pub.1031057668
111 rdf:type schema:CreativeWork
112 https://doi.org/10.1016/0038-1101(69)90027-6 schema:sameAs https://app.dimensions.ai/details/publication/pub.1022312189
113 rdf:type schema:CreativeWork
114 https://doi.org/10.1016/0038-1101(85)90023-1 schema:sameAs https://app.dimensions.ai/details/publication/pub.1020496932
115 rdf:type schema:CreativeWork
116 https://doi.org/10.1016/0038-1101(87)90215-2 schema:sameAs https://app.dimensions.ai/details/publication/pub.1027805422
117 rdf:type schema:CreativeWork
118 https://doi.org/10.1016/0038-1101(90)90007-2 schema:sameAs https://app.dimensions.ai/details/publication/pub.1005596723
119 rdf:type schema:CreativeWork
120 https://doi.org/10.1016/j.sse.2004.05.077 schema:sameAs https://app.dimensions.ai/details/publication/pub.1036555888
121 rdf:type schema:CreativeWork
122 https://doi.org/10.1016/j.sse.2008.08.002 schema:sameAs https://app.dimensions.ai/details/publication/pub.1018013900
123 rdf:type schema:CreativeWork
124 https://doi.org/10.1016/j.sse.2016.04.004 schema:sameAs https://app.dimensions.ai/details/publication/pub.1050330403
125 rdf:type schema:CreativeWork
126 https://doi.org/10.1063/1.3081642 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057910986
127 rdf:type schema:CreativeWork
128 https://doi.org/10.1088/0022-3727/48/23/235103 schema:sameAs https://app.dimensions.ai/details/publication/pub.1042308283
129 rdf:type schema:CreativeWork
130 https://doi.org/10.1088/0268-1242/23/8/085011 schema:sameAs https://app.dimensions.ai/details/publication/pub.1043804628
131 rdf:type schema:CreativeWork
132 https://doi.org/10.1088/0268-1242/24/7/075006 schema:sameAs https://app.dimensions.ai/details/publication/pub.1003606182
133 rdf:type schema:CreativeWork
134 https://doi.org/10.1109/ted.2002.804715 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061590716
135 rdf:type schema:CreativeWork
136 https://doi.org/10.1109/ted.2011.2181390 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061594810
137 rdf:type schema:CreativeWork
138 https://doi.org/10.1142/9789812773371_0004 schema:sameAs https://app.dimensions.ai/details/publication/pub.1088766855
139 rdf:type schema:CreativeWork
140 https://www.grid.ac/institutes/grid.423485.c schema:alternateName Ioffe Institute
141 schema:name Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
142 rdf:type schema:Organization
143 https://www.grid.ac/institutes/grid.469895.f schema:alternateName All-Russian Electrotechnical Institute named after V.I.Lenin
144 schema:name All-Russia Electrotechnical Institute, 111250, Moscow, Russia
145 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...