Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2017-08-25

AUTHORS

A. A. Lebedev, B. Ya. Ber, G. A. Oganesyan, S. V. Belov, S. P. Lebedev, I. P. Nikitina, N. V. Seredova, L. V. Shakhov, V. V. Kozlovski

ABSTRACT

The effects of 8-MeV proton irradiation on n-3C-SiC epitaxial layers grown by sublimation on semi-insulating 4H-SiC substrates are studied. Changes in the sample parameters were recorded by the Hall-effect method and judged from photoluminescence spectra. The Hall method was employed to distinguish between the effects of irradiation on the charge-carrier concentration and mobility. It is found that the charge-carrier removal rate (Vd) is ~110 cm–1. Full compensation of the samples with an initial charge-carrier concentration of ~6.5 × 1017 cm–3 is observed at irradiation doses of ~6 × 1015 cm–2. It is found that the mobility at these doses decreased by only a factor of 2.5. Compared with 4H and 6H silicon carbide, no significant increase in the intensity of so-called defect-related photoluminescence is observed. More... »

PAGES

1044-1046

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782617080218

DOI

http://dx.doi.org/10.1134/s1063782617080218

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1091340167


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lebedev", 
        "givenName": "A. A.", 
        "id": "sg:person.011264364575.18", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011264364575.18"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ber", 
        "givenName": "B. Ya.", 
        "id": "sg:person.013474671571.59", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013474671571.59"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Oganesyan", 
        "givenName": "G. A.", 
        "id": "sg:person.010066675455.68", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010066675455.68"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Belov", 
        "givenName": "S. V.", 
        "id": "sg:person.012506501113.24", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012506501113.24"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "ITMO University, 197101, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.35915.3b", 
          "name": [
            "Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "ITMO University, 197101, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lebedev", 
        "givenName": "S. P.", 
        "id": "sg:person.012160272645.18", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012160272645.18"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Nikitina", 
        "givenName": "I. P.", 
        "id": "sg:person.011073042745.34", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011073042745.34"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Seredova", 
        "givenName": "N. V.", 
        "id": "sg:person.011722477425.06", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011722477425.06"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shakhov", 
        "givenName": "L. V.", 
        "id": "sg:person.011161653313.46", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011161653313.46"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.32495.39", 
          "name": [
            "Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kozlovski", 
        "givenName": "V. V.", 
        "id": "sg:person.011730241573.99", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011730241573.99"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s106378261509016x", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1046253956", 
          "https://doi.org/10.1134/s106378261509016x"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2017-08-25", 
    "datePublishedReg": "2017-08-25", 
    "description": "The effects of 8-MeV proton irradiation on n-3C-SiC epitaxial layers grown by sublimation on semi-insulating 4H-SiC substrates are studied. Changes in the sample parameters were recorded by the Hall-effect method and judged from photoluminescence spectra. The Hall method was employed to distinguish between the effects of irradiation on the charge-carrier concentration and mobility. It is found that the charge-carrier removal rate (Vd) is ~110 cm\u20131. Full compensation of the samples with an initial charge-carrier concentration of ~6.5 \u00d7 1017 cm\u20133 is observed at irradiation doses of ~6 \u00d7 1015 cm\u20132. It is found that the mobility at these doses decreased by only a factor of 2.5. Compared with 4H and 6H silicon carbide, no significant increase in the intensity of so-called defect-related photoluminescence is observed.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782617080218", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "8", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "51"
      }
    ], 
    "keywords": [
      "charge-carrier concentration", 
      "semi-insulating 4H-SiC substrate", 
      "effect of irradiation", 
      "significant increase", 
      "doses", 
      "Hall method", 
      "heteroepitaxial layers", 
      "silicon carbide", 
      "epitaxial layers", 
      "defect-related photoluminescence", 
      "removal rate", 
      "proton irradiation", 
      "photoluminescence spectra", 
      "mobility", 
      "effect", 
      "full compensation", 
      "layer", 
      "irradiation doses", 
      "concentration", 
      "carbide", 
      "irradiation", 
      "sample parameters", 
      "factors", 
      "increase", 
      "rate", 
      "photoluminescence", 
      "changes", 
      "cm-2", 
      "sublimation", 
      "substrate", 
      "compensation", 
      "samples", 
      "method", 
      "spectra", 
      "parameters", 
      "cm-3", 
      "intensity", 
      "protons", 
      "cm-1", 
      "n-3C-SiC epitaxial layers", 
      "Hall-effect method", 
      "charge-carrier removal rate", 
      "initial charge-carrier concentration", 
      "n-3C-SiC heteroepitaxial layers"
    ], 
    "name": "Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers", 
    "pagination": "1044-1046", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1091340167"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782617080218"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782617080218", 
      "https://app.dimensions.ai/details/publication/pub.1091340167"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2021-11-01T18:28", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20211101/entities/gbq_results/article/article_727.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782617080218"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

169 TRIPLES      22 PREDICATES      70 URIs      61 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782617080218 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 schema:author Nfbeedf3a57ec40208b7092b27415cd6d
4 schema:citation sg:pub.10.1134/s106378261509016x
5 schema:datePublished 2017-08-25
6 schema:datePublishedReg 2017-08-25
7 schema:description The effects of 8-MeV proton irradiation on n-3C-SiC epitaxial layers grown by sublimation on semi-insulating 4H-SiC substrates are studied. Changes in the sample parameters were recorded by the Hall-effect method and judged from photoluminescence spectra. The Hall method was employed to distinguish between the effects of irradiation on the charge-carrier concentration and mobility. It is found that the charge-carrier removal rate (Vd) is ~110 cm–1. Full compensation of the samples with an initial charge-carrier concentration of ~6.5 × 1017 cm–3 is observed at irradiation doses of ~6 × 1015 cm–2. It is found that the mobility at these doses decreased by only a factor of 2.5. Compared with 4H and 6H silicon carbide, no significant increase in the intensity of so-called defect-related photoluminescence is observed.
8 schema:genre article
9 schema:inLanguage en
10 schema:isAccessibleForFree false
11 schema:isPartOf N599d0e81ba5f4ce9adc1bedce59f2596
12 Nb15ef886a492437b9a9e88564a57495d
13 sg:journal.1136692
14 schema:keywords Hall method
15 Hall-effect method
16 carbide
17 changes
18 charge-carrier concentration
19 charge-carrier removal rate
20 cm-1
21 cm-2
22 cm-3
23 compensation
24 concentration
25 defect-related photoluminescence
26 doses
27 effect
28 effect of irradiation
29 epitaxial layers
30 factors
31 full compensation
32 heteroepitaxial layers
33 increase
34 initial charge-carrier concentration
35 intensity
36 irradiation
37 irradiation doses
38 layer
39 method
40 mobility
41 n-3C-SiC epitaxial layers
42 n-3C-SiC heteroepitaxial layers
43 parameters
44 photoluminescence
45 photoluminescence spectra
46 proton irradiation
47 protons
48 rate
49 removal rate
50 sample parameters
51 samples
52 semi-insulating 4H-SiC substrate
53 significant increase
54 silicon carbide
55 spectra
56 sublimation
57 substrate
58 schema:name Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers
59 schema:pagination 1044-1046
60 schema:productId Na5eb8d700b5147f1aa557452a252e71f
61 Nd90f03008f324210a465642ffa01083b
62 schema:sameAs https://app.dimensions.ai/details/publication/pub.1091340167
63 https://doi.org/10.1134/s1063782617080218
64 schema:sdDatePublished 2021-11-01T18:28
65 schema:sdLicense https://scigraph.springernature.com/explorer/license/
66 schema:sdPublisher N2ad2613a02fe445bb02219c07d8ede64
67 schema:url https://doi.org/10.1134/s1063782617080218
68 sgo:license sg:explorer/license/
69 sgo:sdDataset articles
70 rdf:type schema:ScholarlyArticle
71 N0694344cadc24e28b28799240f04b6f0 rdf:first sg:person.011722477425.06
72 rdf:rest N9b5b5acd7f7146db97d68f0c026d3180
73 N183de66abb79412ba8693bbccec2a5d1 rdf:first sg:person.011730241573.99
74 rdf:rest rdf:nil
75 N2ad2613a02fe445bb02219c07d8ede64 schema:name Springer Nature - SN SciGraph project
76 rdf:type schema:Organization
77 N599d0e81ba5f4ce9adc1bedce59f2596 schema:volumeNumber 51
78 rdf:type schema:PublicationVolume
79 N697e12ce5a584ffabd2b9675e410bd7f rdf:first sg:person.010066675455.68
80 rdf:rest Nda1111ee29454df288f4094c5f5f3071
81 N95478dbe8f104df28f05bac6c83024da rdf:first sg:person.013474671571.59
82 rdf:rest N697e12ce5a584ffabd2b9675e410bd7f
83 N9b5b5acd7f7146db97d68f0c026d3180 rdf:first sg:person.011161653313.46
84 rdf:rest N183de66abb79412ba8693bbccec2a5d1
85 Na5eb8d700b5147f1aa557452a252e71f schema:name doi
86 schema:value 10.1134/s1063782617080218
87 rdf:type schema:PropertyValue
88 Nb15ef886a492437b9a9e88564a57495d schema:issueNumber 8
89 rdf:type schema:PublicationIssue
90 Nb30800129cb4494d8546f605a762ee14 rdf:first sg:person.011073042745.34
91 rdf:rest N0694344cadc24e28b28799240f04b6f0
92 Nc84664cc34544048ab02dfe015960cc4 rdf:first sg:person.012160272645.18
93 rdf:rest Nb30800129cb4494d8546f605a762ee14
94 Nd90f03008f324210a465642ffa01083b schema:name dimensions_id
95 schema:value pub.1091340167
96 rdf:type schema:PropertyValue
97 Nda1111ee29454df288f4094c5f5f3071 rdf:first sg:person.012506501113.24
98 rdf:rest Nc84664cc34544048ab02dfe015960cc4
99 Nfbeedf3a57ec40208b7092b27415cd6d rdf:first sg:person.011264364575.18
100 rdf:rest N95478dbe8f104df28f05bac6c83024da
101 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
102 schema:name Physical Sciences
103 rdf:type schema:DefinedTerm
104 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
105 schema:name Condensed Matter Physics
106 rdf:type schema:DefinedTerm
107 sg:journal.1136692 schema:issn 1063-7826
108 1090-6479
109 schema:name Semiconductors
110 schema:publisher Pleiades Publishing
111 rdf:type schema:Periodical
112 sg:person.010066675455.68 schema:affiliation grid-institutes:grid.423485.c
113 schema:familyName Oganesyan
114 schema:givenName G. A.
115 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010066675455.68
116 rdf:type schema:Person
117 sg:person.011073042745.34 schema:affiliation grid-institutes:grid.423485.c
118 schema:familyName Nikitina
119 schema:givenName I. P.
120 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011073042745.34
121 rdf:type schema:Person
122 sg:person.011161653313.46 schema:affiliation grid-institutes:grid.423485.c
123 schema:familyName Shakhov
124 schema:givenName L. V.
125 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011161653313.46
126 rdf:type schema:Person
127 sg:person.011264364575.18 schema:affiliation grid-institutes:grid.423485.c
128 schema:familyName Lebedev
129 schema:givenName A. A.
130 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011264364575.18
131 rdf:type schema:Person
132 sg:person.011722477425.06 schema:affiliation grid-institutes:grid.423485.c
133 schema:familyName Seredova
134 schema:givenName N. V.
135 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011722477425.06
136 rdf:type schema:Person
137 sg:person.011730241573.99 schema:affiliation grid-institutes:grid.32495.39
138 schema:familyName Kozlovski
139 schema:givenName V. V.
140 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011730241573.99
141 rdf:type schema:Person
142 sg:person.012160272645.18 schema:affiliation grid-institutes:grid.35915.3b
143 schema:familyName Lebedev
144 schema:givenName S. P.
145 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012160272645.18
146 rdf:type schema:Person
147 sg:person.012506501113.24 schema:affiliation grid-institutes:grid.423485.c
148 schema:familyName Belov
149 schema:givenName S. V.
150 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012506501113.24
151 rdf:type schema:Person
152 sg:person.013474671571.59 schema:affiliation grid-institutes:grid.423485.c
153 schema:familyName Ber
154 schema:givenName B. Ya.
155 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013474671571.59
156 rdf:type schema:Person
157 sg:pub.10.1134/s106378261509016x schema:sameAs https://app.dimensions.ai/details/publication/pub.1046253956
158 https://doi.org/10.1134/s106378261509016x
159 rdf:type schema:CreativeWork
160 grid-institutes:grid.32495.39 schema:alternateName Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia
161 schema:name Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia
162 rdf:type schema:Organization
163 grid-institutes:grid.35915.3b schema:alternateName ITMO University, 197101, St. Petersburg, Russia
164 schema:name ITMO University, 197101, St. Petersburg, Russia
165 Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
166 rdf:type schema:Organization
167 grid-institutes:grid.423485.c schema:alternateName Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
168 schema:name Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
169 rdf:type schema:Organization
 




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