Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001) View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2017-08-25

AUTHORS

V. Yu. Davydov, D. Yu. Usachov, S. P. Lebedev, A. N. Smirnov, V. S. Levitskii, I. A. Eliseyev, P. A. Alekseev, M. S. Dunaevskiy, O. Yu. Vilkov, A. G. Rybkin, A. A. Lebedev

ABSTRACT

The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6H-SiC substrate in an argon environment are studied by Raman spectroscopy, atomic-force microscopy, the low-energy electron diffraction method, X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy and X-ray absorption spectroscopy at the carbon K edge. It is shown that the results of a systematic integrated study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films with a small fraction of bilayer graphene inclusions. More... »

PAGES

1072-1080

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782617080073

DOI

http://dx.doi.org/10.1134/s1063782617080073

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1091325158


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