On the limit of the injection ability of silicon p+–n junctions as a result of fundamental physical effects View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2017-06

AUTHORS

T. T. Mnatsakanov, M. E. Levinshtein, V. B. Shuman, B. M. Seredin

ABSTRACT

Analytical expressions describing the dependences of the p+–n-junction leakage current on the doping level of the p+-type region are derived by taking into account a whole set of nonlinear physical effects: electron–hole scattering, Auger recombination, band-gap narrowing, and nonlinear dependences of the charge-carrier lifetime and mobility on the doping level. It is shown that the dependence for the leakage current has a minimum at which the injection ability of the p+-type emitter is at a maximum. The dependence of the extremum position on the main parameters of the heavily doped p+ layer is analyzed. The data obtained make it possible to optimize the structure of high-power silicon devices and to facilitate the adequacy of numerical calculations. More... »

PAGES

798-802

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782617060227

DOI

http://dx.doi.org/10.1134/s1063782617060227

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1085750405


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "All-Russian Electrotechnical Institute named after V.I.Lenin", 
          "id": "https://www.grid.ac/institutes/grid.469895.f", 
          "name": [
            "All-Russia Electrotechnical Institute, 111250, Moscow, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mnatsakanov", 
        "givenName": "T. T.", 
        "id": "sg:person.014522340505.49", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014522340505.49"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Levinshtein", 
        "givenName": "M. E.", 
        "id": "sg:person.013715361533.07", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013715361533.07"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shuman", 
        "givenName": "V. B.", 
        "id": "sg:person.010375634374.09", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010375634374.09"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Platov South-Russian State Polytechnic University", 
          "id": "https://www.grid.ac/institutes/grid.445743.5", 
          "name": [
            "Platov South-Russian State Polytechnic University, 346428, Novocherkassk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Seredin", 
        "givenName": "B. M.", 
        "id": "sg:person.010503254215.72", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010503254215.72"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/1.1641133", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1000583462", 
          "https://doi.org/10.1134/1.1641133"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1088/0268-1242/26/5/055024", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1010097957"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(94)e0059-n", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1012389831"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(76)90043-5", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1015164525"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(76)90043-5", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1015164525"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(68)90053-1", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1034837913"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(68)90053-1", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1034837913"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/16.992884", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061097929"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2017-06", 
    "datePublishedReg": "2017-06-01", 
    "description": "Analytical expressions describing the dependences of the p+\u2013n-junction leakage current on the doping level of the p+-type region are derived by taking into account a whole set of nonlinear physical effects: electron\u2013hole scattering, Auger recombination, band-gap narrowing, and nonlinear dependences of the charge-carrier lifetime and mobility on the doping level. It is shown that the dependence for the leakage current has a minimum at which the injection ability of the p+-type emitter is at a maximum. The dependence of the extremum position on the main parameters of the heavily doped p+ layer is analyzed. The data obtained make it possible to optimize the structure of high-power silicon devices and to facilitate the adequacy of numerical calculations.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1134/s1063782617060227", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "6", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "51"
      }
    ], 
    "name": "On the limit of the injection ability of silicon p+\u2013n junctions as a result of fundamental physical effects", 
    "pagination": "798-802", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "144e2a94eceac7b47270cc1cf5710a13664c05c7247e50209e19a28545587d24"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782617060227"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1085750405"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782617060227", 
      "https://app.dimensions.ai/details/publication/pub.1085750405"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-10T16:35", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8669_00000484.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1134/S1063782617060227"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782617060227'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782617060227'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782617060227'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782617060227'


 

This table displays all metadata directly associated to this object as RDF triples.

107 TRIPLES      21 PREDICATES      33 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782617060227 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author Nd64d9ae8e30242b19a00ee042288723a
4 schema:citation sg:pub.10.1134/1.1641133
5 https://doi.org/10.1016/0038-1101(68)90053-1
6 https://doi.org/10.1016/0038-1101(76)90043-5
7 https://doi.org/10.1016/0038-1101(94)e0059-n
8 https://doi.org/10.1088/0268-1242/26/5/055024
9 https://doi.org/10.1109/16.992884
10 schema:datePublished 2017-06
11 schema:datePublishedReg 2017-06-01
12 schema:description Analytical expressions describing the dependences of the p+–n-junction leakage current on the doping level of the p+-type region are derived by taking into account a whole set of nonlinear physical effects: electron–hole scattering, Auger recombination, band-gap narrowing, and nonlinear dependences of the charge-carrier lifetime and mobility on the doping level. It is shown that the dependence for the leakage current has a minimum at which the injection ability of the p+-type emitter is at a maximum. The dependence of the extremum position on the main parameters of the heavily doped p+ layer is analyzed. The data obtained make it possible to optimize the structure of high-power silicon devices and to facilitate the adequacy of numerical calculations.
13 schema:genre research_article
14 schema:inLanguage en
15 schema:isAccessibleForFree false
16 schema:isPartOf N0fbb12d0ca9d448b949587b8f2684f44
17 N987a6e2a570041fba85eb8774a7f6154
18 sg:journal.1136692
19 schema:name On the limit of the injection ability of silicon p+–n junctions as a result of fundamental physical effects
20 schema:pagination 798-802
21 schema:productId N2fab6ccf20d646ba98430eee6cfc5bff
22 Na8a73031a2024b4f9decca2e897d68d6
23 Nf26b9bd0b0f144f494f386a9bdbdebe8
24 schema:sameAs https://app.dimensions.ai/details/publication/pub.1085750405
25 https://doi.org/10.1134/s1063782617060227
26 schema:sdDatePublished 2019-04-10T16:35
27 schema:sdLicense https://scigraph.springernature.com/explorer/license/
28 schema:sdPublisher Nc4f598c0662b4d5fb79ddb0170dfe8d2
29 schema:url http://link.springer.com/10.1134/S1063782617060227
30 sgo:license sg:explorer/license/
31 sgo:sdDataset articles
32 rdf:type schema:ScholarlyArticle
33 N084c2ac4ac9b43f4a7db5b2d7bafed4c rdf:first sg:person.010375634374.09
34 rdf:rest N574b34f8ad164f1cb7981e14a264ff64
35 N0fbb12d0ca9d448b949587b8f2684f44 schema:issueNumber 6
36 rdf:type schema:PublicationIssue
37 N2fab6ccf20d646ba98430eee6cfc5bff schema:name doi
38 schema:value 10.1134/s1063782617060227
39 rdf:type schema:PropertyValue
40 N574b34f8ad164f1cb7981e14a264ff64 rdf:first sg:person.010503254215.72
41 rdf:rest rdf:nil
42 N987a6e2a570041fba85eb8774a7f6154 schema:volumeNumber 51
43 rdf:type schema:PublicationVolume
44 Na8a73031a2024b4f9decca2e897d68d6 schema:name dimensions_id
45 schema:value pub.1085750405
46 rdf:type schema:PropertyValue
47 Nc4f598c0662b4d5fb79ddb0170dfe8d2 schema:name Springer Nature - SN SciGraph project
48 rdf:type schema:Organization
49 Nd64d9ae8e30242b19a00ee042288723a rdf:first sg:person.014522340505.49
50 rdf:rest Nfbcdc44add7c46558364e7764726aeb1
51 Nf26b9bd0b0f144f494f386a9bdbdebe8 schema:name readcube_id
52 schema:value 144e2a94eceac7b47270cc1cf5710a13664c05c7247e50209e19a28545587d24
53 rdf:type schema:PropertyValue
54 Nfbcdc44add7c46558364e7764726aeb1 rdf:first sg:person.013715361533.07
55 rdf:rest N084c2ac4ac9b43f4a7db5b2d7bafed4c
56 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
57 schema:name Engineering
58 rdf:type schema:DefinedTerm
59 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
60 schema:name Materials Engineering
61 rdf:type schema:DefinedTerm
62 sg:journal.1136692 schema:issn 1063-7826
63 1090-6479
64 schema:name Semiconductors
65 rdf:type schema:Periodical
66 sg:person.010375634374.09 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
67 schema:familyName Shuman
68 schema:givenName V. B.
69 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010375634374.09
70 rdf:type schema:Person
71 sg:person.010503254215.72 schema:affiliation https://www.grid.ac/institutes/grid.445743.5
72 schema:familyName Seredin
73 schema:givenName B. M.
74 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010503254215.72
75 rdf:type schema:Person
76 sg:person.013715361533.07 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
77 schema:familyName Levinshtein
78 schema:givenName M. E.
79 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013715361533.07
80 rdf:type schema:Person
81 sg:person.014522340505.49 schema:affiliation https://www.grid.ac/institutes/grid.469895.f
82 schema:familyName Mnatsakanov
83 schema:givenName T. T.
84 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014522340505.49
85 rdf:type schema:Person
86 sg:pub.10.1134/1.1641133 schema:sameAs https://app.dimensions.ai/details/publication/pub.1000583462
87 https://doi.org/10.1134/1.1641133
88 rdf:type schema:CreativeWork
89 https://doi.org/10.1016/0038-1101(68)90053-1 schema:sameAs https://app.dimensions.ai/details/publication/pub.1034837913
90 rdf:type schema:CreativeWork
91 https://doi.org/10.1016/0038-1101(76)90043-5 schema:sameAs https://app.dimensions.ai/details/publication/pub.1015164525
92 rdf:type schema:CreativeWork
93 https://doi.org/10.1016/0038-1101(94)e0059-n schema:sameAs https://app.dimensions.ai/details/publication/pub.1012389831
94 rdf:type schema:CreativeWork
95 https://doi.org/10.1088/0268-1242/26/5/055024 schema:sameAs https://app.dimensions.ai/details/publication/pub.1010097957
96 rdf:type schema:CreativeWork
97 https://doi.org/10.1109/16.992884 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061097929
98 rdf:type schema:CreativeWork
99 https://www.grid.ac/institutes/grid.423485.c schema:alternateName Ioffe Institute
100 schema:name Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
101 rdf:type schema:Organization
102 https://www.grid.ac/institutes/grid.445743.5 schema:alternateName Platov South-Russian State Polytechnic University
103 schema:name Platov South-Russian State Polytechnic University, 346428, Novocherkassk, Russia
104 rdf:type schema:Organization
105 https://www.grid.ac/institutes/grid.469895.f schema:alternateName All-Russian Electrotechnical Institute named after V.I.Lenin
106 schema:name All-Russia Electrotechnical Institute, 111250, Moscow, Russia
107 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...