Ontology type: schema:ScholarlyArticle
2017-03-16
AUTHORSS. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maximov, S. S. Rouvimov, A. E. Zhukov
ABSTRACTThe deposition of InxGa1–xAs with an indium content of 0.3–0.5 and an average thickness of 3–27 single layers on a GaAs wafer by metalorganic chemical vapor deposition (MOCVD) at low temperatures results in the appearance of thickness and composition modulations in the layers being formed. Such structures can be considered to be intermediate nanostructures between ideal quantum wells and quantum dots. Depending on the average thickness and composition of the layers, the wavelength of the photoluminescence peak for the hybrid InGaAs quantum well–dots nanostructures varies from 950 to 1100 nm. The optimal average InxGa1–xAs thicknesses and compositions at which the emission wavelength is the longest with a high quantum efficiency retained are determined. More... »
PAGES357-362
http://scigraph.springernature.com/pub.10.1134/s1063782617030198
DOIhttp://dx.doi.org/10.1134/s1063782617030198
DIMENSIONShttps://app.dimensions.ai/details/publication/pub.1084223603
JSON-LD is the canonical representation for SciGraph data.
TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT
[
{
"@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json",
"about": [
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Physical Sciences",
"type": "DefinedTerm"
},
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Quantum Physics",
"type": "DefinedTerm"
}
],
"author": [
{
"affiliation": {
"alternateName": "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.423485.c",
"name": [
"St. Petersburg Academic University, 194021, St. Petersburg, Russia",
"Solar Dots Ltd, 194021, St. Petersburg, Russia",
"Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Mintairov",
"givenName": "S. A.",
"id": "sg:person.07536566153.48",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07536566153.48"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.32495.39",
"name": [
"St. Petersburg Academic University, 194021, St. Petersburg, Russia",
"Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Kalyuzhnyy",
"givenName": "N. A.",
"id": "sg:person.014537453054.16",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014537453054.16"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.423485.c",
"name": [
"St. Petersburg Academic University, 194021, St. Petersburg, Russia",
"Solar Dots Ltd, 194021, St. Petersburg, Russia",
"Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Nadtochiy",
"givenName": "A. M.",
"id": "sg:person.01114776037.19",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01114776037.19"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.32495.39",
"name": [
"St. Petersburg Academic University, 194021, St. Petersburg, Russia",
"Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Maximov",
"givenName": "M. V.",
"id": "sg:person.015106205514.66",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015106205514.66"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "University of Notre Dame, 46556, Notre Dame, Indiana, USA",
"id": "http://www.grid.ac/institutes/grid.131063.6",
"name": [
"University of Notre Dame, 46556, Notre Dame, Indiana, USA"
],
"type": "Organization"
},
"familyName": "Rouvimov",
"givenName": "S. S.",
"id": "sg:person.01321212003.20",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01321212003.20"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.32495.39",
"name": [
"St. Petersburg Academic University, 194021, St. Petersburg, Russia",
"Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Zhukov",
"givenName": "A. E.",
"id": "sg:person.011315427765.17",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011315427765.17"
],
"type": "Person"
}
],
"citation": [
{
"id": "sg:pub.10.1134/s1063782616090189",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1028001223",
"https://doi.org/10.1134/s1063782616090189"
],
"type": "CreativeWork"
},
{
"id": "sg:pub.10.1134/s1063782612100223",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1001454055",
"https://doi.org/10.1134/s1063782612100223"
],
"type": "CreativeWork"
},
{
"id": "sg:pub.10.1134/s106378261508014x",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1001292207",
"https://doi.org/10.1134/s106378261508014x"
],
"type": "CreativeWork"
}
],
"datePublished": "2017-03-16",
"datePublishedReg": "2017-03-16",
"description": "The deposition of InxGa1\u2013xAs with an indium content of 0.3\u20130.5 and an average thickness of 3\u201327 single layers on a GaAs wafer by metalorganic chemical vapor deposition (MOCVD) at low temperatures results in the appearance of thickness and composition modulations in the layers being formed. Such structures can be considered to be intermediate nanostructures between ideal quantum wells and quantum dots. Depending on the average thickness and composition of the layers, the wavelength of the photoluminescence peak for the hybrid InGaAs quantum well\u2013dots nanostructures varies from 950 to 1100 nm. The optimal average InxGa1\u2013xAs thicknesses and compositions at which the emission wavelength is the longest with a high quantum efficiency retained are determined.",
"genre": "article",
"id": "sg:pub.10.1134/s1063782617030198",
"inLanguage": "en",
"isAccessibleForFree": false,
"isPartOf": [
{
"id": "sg:journal.1136692",
"issn": [
"1063-7826",
"1090-6479"
],
"name": "Semiconductors",
"publisher": "Pleiades Publishing",
"type": "Periodical"
},
{
"issueNumber": "3",
"type": "PublicationIssue"
},
{
"type": "PublicationVolume",
"volumeNumber": "51"
}
],
"keywords": [
"metalorganic chemical vapor deposition",
"high quantum efficiency",
"quantum wells",
"chemical vapor deposition",
"dot nanostructures",
"optical properties",
"quantum efficiency",
"photoluminescence peak",
"low temperature results",
"quantum dots",
"indium content",
"emission wavelength",
"InxGa1-xAs",
"GaAs wafers",
"vapor deposition",
"composition modulation",
"wavelength",
"intermediate nanostructures",
"single layer",
"dots",
"nanostructures",
"average thickness",
"such structures",
"temperature results",
"thickness",
"deposition",
"InGaAs",
"layer",
"wafers",
"wells",
"peak",
"properties",
"modulation",
"structure",
"composition",
"efficiency",
"appearance",
"results",
"content"
],
"name": "Optical properties of hybrid quantum-well\u2013dots nanostructures grown by MOCVD",
"pagination": "357-362",
"productId": [
{
"name": "dimensions_id",
"type": "PropertyValue",
"value": [
"pub.1084223603"
]
},
{
"name": "doi",
"type": "PropertyValue",
"value": [
"10.1134/s1063782617030198"
]
}
],
"sameAs": [
"https://doi.org/10.1134/s1063782617030198",
"https://app.dimensions.ai/details/publication/pub.1084223603"
],
"sdDataset": "articles",
"sdDatePublished": "2022-05-10T10:17",
"sdLicense": "https://scigraph.springernature.com/explorer/license/",
"sdPublisher": {
"name": "Springer Nature - SN SciGraph project",
"type": "Organization"
},
"sdSource": "s3://com-springernature-scigraph/baseset/20220509/entities/gbq_results/article/article_743.jsonl",
"type": "ScholarlyArticle",
"url": "https://doi.org/10.1134/s1063782617030198"
}
]Download the RDF metadata as: json-ld nt turtle xml License info
JSON-LD is a popular format for linked data which is fully compatible with JSON.
curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782617030198'
N-Triples is a line-based linked data format ideal for batch operations.
curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782617030198'
Turtle is a human-readable linked data format.
curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782617030198'
RDF/XML is a standard XML format for linked data.
curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782617030198'
This table displays all metadata directly associated to this object as RDF triples.
154 TRIPLES
22 PREDICATES
67 URIs
56 LITERALS
6 BLANK NODES