Effect of H+ implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2017-03-16

AUTHORS

N. I. Klyui, V. B. Lozinskii, A. I. Liptuga, V. N. Dikusha, A. P. Oksanych, M. G. Kogdas’, A. L. Perekhrest, S. E. Pritchin

ABSTRACT

The optical properties of semi-insulating GaAs crystals subjected to multienergy hydrogen-ion implantation and treatment in a high-frequency electromagnetic field are studied in the infrared spectral region. It is established that such combined treatment provides a means for substantially increasing the transmittance of GaAs crystals to values characteristic of crystals of high optical quality. On the basis of analysis of the infrared transmittance and reflectance data, Raman spectroscopy data, and atomic-force microscopy data on the surface morphology of the crystals, a physical model is proposed to interpret the effects experimentally observed in the crystals. The model takes into account the interaction of radiation defects with the initial structural defects in the crystals as well as the effect of compensation of defect centers by hydrogen during high-frequency treatment. More... »

PAGES

305-309

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782617030113

DOI

http://dx.doi.org/10.1134/s1063782617030113

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1084223595


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0299", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Other Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kyiv, Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.418751.e", 
          "name": [
            "College of Physics, Jilin University, 130012, Changchun, China", 
            "Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kyiv, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Klyui", 
        "givenName": "N. I.", 
        "id": "sg:person.07400026723.51", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07400026723.51"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kyiv, Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.418751.e", 
          "name": [
            "College of Physics, Jilin University, 130012, Changchun, China", 
            "Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kyiv, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lozinskii", 
        "givenName": "V. B.", 
        "id": "sg:person.014635010557.71", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014635010557.71"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kyiv, Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.418751.e", 
          "name": [
            "Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kyiv, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Liptuga", 
        "givenName": "A. I.", 
        "id": "sg:person.016655271054.50", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016655271054.50"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kyiv, Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.418751.e", 
          "name": [
            "Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kyiv, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Dikusha", 
        "givenName": "V. N.", 
        "id": "sg:person.07373356651.81", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07373356651.81"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Kremenchug National University, 39600, Kremenchug, Ukraine", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Kremenchug National University, 39600, Kremenchug, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Oksanych", 
        "givenName": "A. P.", 
        "id": "sg:person.011563700251.24", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011563700251.24"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Kremenchug National University, 39600, Kremenchug, Ukraine", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Kremenchug National University, 39600, Kremenchug, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kogdas\u2019", 
        "givenName": "M. G.", 
        "id": "sg:person.013754221651.11", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013754221651.11"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Kremenchug National University, 39600, Kremenchug, Ukraine", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Kremenchug National University, 39600, Kremenchug, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Perekhrest", 
        "givenName": "A. L.", 
        "id": "sg:person.016144543251.30", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016144543251.30"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Kremenchug National University, 39600, Kremenchug, Ukraine", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Kremenchug National University, 39600, Kremenchug, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Pritchin", 
        "givenName": "S. E.", 
        "id": "sg:person.014135451237.13", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014135451237.13"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1007/s11664-010-1334-x", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1031686310", 
          "https://doi.org/10.1007/s11664-010-1334-x"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1557/proc-104-313", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1067905282", 
          "https://doi.org/10.1557/proc-104-313"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063785012110235", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1031371435", 
          "https://doi.org/10.1134/s1063785012110235"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2017-03-16", 
    "datePublishedReg": "2017-03-16", 
    "description": "The optical properties of semi-insulating GaAs crystals subjected to multienergy hydrogen-ion implantation and treatment in a high-frequency electromagnetic field are studied in the infrared spectral region. It is established that such combined treatment provides a means for substantially increasing the transmittance of GaAs crystals to values characteristic of crystals of high optical quality. On the basis of analysis of the infrared transmittance and reflectance data, Raman spectroscopy data, and atomic-force microscopy data on the surface morphology of the crystals, a physical model is proposed to interpret the effects experimentally observed in the crystals. The model takes into account the interaction of radiation defects with the initial structural defects in the crystals as well as the effect of compensation of defect centers by hydrogen during high-frequency treatment.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782617030113", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "3", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "51"
      }
    ], 
    "keywords": [
      "optical properties", 
      "GaAs crystals", 
      "semi-insulating GaAs crystals", 
      "spectral region", 
      "high optical quality", 
      "atomic force microscopy data", 
      "hydrogen ion implantation", 
      "infrared spectral region", 
      "IR spectral region", 
      "high-frequency electromagnetic field", 
      "Raman spectroscopy data", 
      "radiation defects", 
      "optical quality", 
      "defect centers", 
      "infrared transmittance", 
      "electromagnetic field", 
      "spectroscopy data", 
      "surface morphology", 
      "initial structural defects", 
      "microscopy data", 
      "crystals", 
      "transmittance", 
      "structural defects", 
      "physical model", 
      "reflectance data", 
      "high-frequency treatment", 
      "effect of compensation", 
      "properties", 
      "hydrogen", 
      "basis of analysis", 
      "field", 
      "implantation", 
      "defects", 
      "region", 
      "compensation", 
      "morphology", 
      "model", 
      "interaction", 
      "effect", 
      "account", 
      "data", 
      "means", 
      "center", 
      "values", 
      "quality", 
      "analysis", 
      "basis", 
      "treatment"
    ], 
    "name": "Effect of H+ implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region", 
    "pagination": "305-309", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1084223595"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782617030113"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782617030113", 
      "https://app.dimensions.ai/details/publication/pub.1084223595"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-10-01T06:43", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20221001/entities/gbq_results/article/article_737.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782617030113"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

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This table displays all metadata directly associated to this object as RDF triples.

170 TRIPLES      21 PREDICATES      75 URIs      64 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782617030113 schema:about anzsrc-for:02
2 anzsrc-for:0299
3 schema:author Ndfdbd97e857a493e986586655a46efc4
4 schema:citation sg:pub.10.1007/s11664-010-1334-x
5 sg:pub.10.1134/s1063785012110235
6 sg:pub.10.1557/proc-104-313
7 schema:datePublished 2017-03-16
8 schema:datePublishedReg 2017-03-16
9 schema:description The optical properties of semi-insulating GaAs crystals subjected to multienergy hydrogen-ion implantation and treatment in a high-frequency electromagnetic field are studied in the infrared spectral region. It is established that such combined treatment provides a means for substantially increasing the transmittance of GaAs crystals to values characteristic of crystals of high optical quality. On the basis of analysis of the infrared transmittance and reflectance data, Raman spectroscopy data, and atomic-force microscopy data on the surface morphology of the crystals, a physical model is proposed to interpret the effects experimentally observed in the crystals. The model takes into account the interaction of radiation defects with the initial structural defects in the crystals as well as the effect of compensation of defect centers by hydrogen during high-frequency treatment.
10 schema:genre article
11 schema:isAccessibleForFree false
12 schema:isPartOf N6833de385f2f46178b4b3e0237979ad2
13 Nbe273c0a5de64ceb938b7091b4518bc7
14 sg:journal.1136692
15 schema:keywords GaAs crystals
16 IR spectral region
17 Raman spectroscopy data
18 account
19 analysis
20 atomic force microscopy data
21 basis
22 basis of analysis
23 center
24 compensation
25 crystals
26 data
27 defect centers
28 defects
29 effect
30 effect of compensation
31 electromagnetic field
32 field
33 high optical quality
34 high-frequency electromagnetic field
35 high-frequency treatment
36 hydrogen
37 hydrogen ion implantation
38 implantation
39 infrared spectral region
40 infrared transmittance
41 initial structural defects
42 interaction
43 means
44 microscopy data
45 model
46 morphology
47 optical properties
48 optical quality
49 physical model
50 properties
51 quality
52 radiation defects
53 reflectance data
54 region
55 semi-insulating GaAs crystals
56 spectral region
57 spectroscopy data
58 structural defects
59 surface morphology
60 transmittance
61 treatment
62 values
63 schema:name Effect of H+ implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region
64 schema:pagination 305-309
65 schema:productId N2b6c9119f6424b0fa0c4283f564e1526
66 Nea8bedb625634c8cb32e69e63ac1fb65
67 schema:sameAs https://app.dimensions.ai/details/publication/pub.1084223595
68 https://doi.org/10.1134/s1063782617030113
69 schema:sdDatePublished 2022-10-01T06:43
70 schema:sdLicense https://scigraph.springernature.com/explorer/license/
71 schema:sdPublisher N38421eb14a9e4880a14944ae1096e4c8
72 schema:url https://doi.org/10.1134/s1063782617030113
73 sgo:license sg:explorer/license/
74 sgo:sdDataset articles
75 rdf:type schema:ScholarlyArticle
76 N20c9acb9ef0844269d48d1931d88862c rdf:first sg:person.011563700251.24
77 rdf:rest N95f48c20d1904d8e9665a0acc17de560
78 N2a950fbed2554d0e9265a1237e57398a rdf:first sg:person.07373356651.81
79 rdf:rest N20c9acb9ef0844269d48d1931d88862c
80 N2b6c9119f6424b0fa0c4283f564e1526 schema:name dimensions_id
81 schema:value pub.1084223595
82 rdf:type schema:PropertyValue
83 N38421eb14a9e4880a14944ae1096e4c8 schema:name Springer Nature - SN SciGraph project
84 rdf:type schema:Organization
85 N390323b1f5714236bf95a8cc0062cc88 rdf:first sg:person.016144543251.30
86 rdf:rest N70f179980fd8400f87f6ccc628299057
87 N6833de385f2f46178b4b3e0237979ad2 schema:issueNumber 3
88 rdf:type schema:PublicationIssue
89 N70f179980fd8400f87f6ccc628299057 rdf:first sg:person.014135451237.13
90 rdf:rest rdf:nil
91 N95f48c20d1904d8e9665a0acc17de560 rdf:first sg:person.013754221651.11
92 rdf:rest N390323b1f5714236bf95a8cc0062cc88
93 Naf81da57c36c4edea7c9484c546c1bbd rdf:first sg:person.014635010557.71
94 rdf:rest Nbbcd44c802d541988b72280e51d2c086
95 Nbbcd44c802d541988b72280e51d2c086 rdf:first sg:person.016655271054.50
96 rdf:rest N2a950fbed2554d0e9265a1237e57398a
97 Nbe273c0a5de64ceb938b7091b4518bc7 schema:volumeNumber 51
98 rdf:type schema:PublicationVolume
99 Ndfdbd97e857a493e986586655a46efc4 rdf:first sg:person.07400026723.51
100 rdf:rest Naf81da57c36c4edea7c9484c546c1bbd
101 Nea8bedb625634c8cb32e69e63ac1fb65 schema:name doi
102 schema:value 10.1134/s1063782617030113
103 rdf:type schema:PropertyValue
104 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
105 schema:name Physical Sciences
106 rdf:type schema:DefinedTerm
107 anzsrc-for:0299 schema:inDefinedTermSet anzsrc-for:
108 schema:name Other Physical Sciences
109 rdf:type schema:DefinedTerm
110 sg:journal.1136692 schema:issn 1063-7826
111 1090-6479
112 schema:name Semiconductors
113 schema:publisher Pleiades Publishing
114 rdf:type schema:Periodical
115 sg:person.011563700251.24 schema:affiliation grid-institutes:None
116 schema:familyName Oksanych
117 schema:givenName A. P.
118 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011563700251.24
119 rdf:type schema:Person
120 sg:person.013754221651.11 schema:affiliation grid-institutes:None
121 schema:familyName Kogdas’
122 schema:givenName M. G.
123 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013754221651.11
124 rdf:type schema:Person
125 sg:person.014135451237.13 schema:affiliation grid-institutes:None
126 schema:familyName Pritchin
127 schema:givenName S. E.
128 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014135451237.13
129 rdf:type schema:Person
130 sg:person.014635010557.71 schema:affiliation grid-institutes:grid.418751.e
131 schema:familyName Lozinskii
132 schema:givenName V. B.
133 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014635010557.71
134 rdf:type schema:Person
135 sg:person.016144543251.30 schema:affiliation grid-institutes:None
136 schema:familyName Perekhrest
137 schema:givenName A. L.
138 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016144543251.30
139 rdf:type schema:Person
140 sg:person.016655271054.50 schema:affiliation grid-institutes:grid.418751.e
141 schema:familyName Liptuga
142 schema:givenName A. I.
143 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016655271054.50
144 rdf:type schema:Person
145 sg:person.07373356651.81 schema:affiliation grid-institutes:grid.418751.e
146 schema:familyName Dikusha
147 schema:givenName V. N.
148 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07373356651.81
149 rdf:type schema:Person
150 sg:person.07400026723.51 schema:affiliation grid-institutes:grid.418751.e
151 schema:familyName Klyui
152 schema:givenName N. I.
153 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07400026723.51
154 rdf:type schema:Person
155 sg:pub.10.1007/s11664-010-1334-x schema:sameAs https://app.dimensions.ai/details/publication/pub.1031686310
156 https://doi.org/10.1007/s11664-010-1334-x
157 rdf:type schema:CreativeWork
158 sg:pub.10.1134/s1063785012110235 schema:sameAs https://app.dimensions.ai/details/publication/pub.1031371435
159 https://doi.org/10.1134/s1063785012110235
160 rdf:type schema:CreativeWork
161 sg:pub.10.1557/proc-104-313 schema:sameAs https://app.dimensions.ai/details/publication/pub.1067905282
162 https://doi.org/10.1557/proc-104-313
163 rdf:type schema:CreativeWork
164 grid-institutes:None schema:alternateName Kremenchug National University, 39600, Kremenchug, Ukraine
165 schema:name Kremenchug National University, 39600, Kremenchug, Ukraine
166 rdf:type schema:Organization
167 grid-institutes:grid.418751.e schema:alternateName Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kyiv, Ukraine
168 schema:name College of Physics, Jilin University, 130012, Changchun, China
169 Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kyiv, Ukraine
170 rdf:type schema:Organization
 




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