Current–voltage characteristics of high-voltage 4H-SiC p+–n0–n+ diodes in the avalanche breakdown mode View Full Text


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Article Info

DATE

2017-03-16

AUTHORS

P. A. Ivanov, A. S. Potapov, T. P. Samsonova, I. V. Grekhov

ABSTRACT

p+–n0–n+ 4H-SiC diodes with homogeneous avalanche breakdown at 1860 V are fabricated. The pulse current–voltage characteristics are measured in the avalanche-breakdown mode up to a current density of 4000 A/cm2. It is shown that the avalanche-breakdown voltage increases with increasing temperature. The following diode parameters are determined: the avalanche resistance (8.6 × 10–2 Ω cm2), the electron drift velocity in the n0 base at electric fields higher than 106 V/cm (7.8 × 106 cm/s), and the relative temperature coefficient of the breakdown voltage (2.1 × 10–4 K–1). More... »

PAGES

374-378

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782617030095

DOI

http://dx.doi.org/10.1134/s1063782617030095

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1084223593


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