Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2017-02

AUTHORS

S. N. Yurkov, T. T. Mnatsakanov, M. E. Levinshtein, A. G. Tandoev, J. W. Palmour

ABSTRACT

The impact of non-1D effects caused by the spread of the gate current in the base layer on the gate switch-on current in 4H-SiC thyristors is considered. It is shown that a new switching mechanism implemented in 4H-SiC thyristors results in the dependence of the gate switch-on current on the thyristor parameters, with this dependence being fundamentally different from that in conventional silicon thyristors. More... »

PAGES

225-231

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782617020257

DOI

http://dx.doi.org/10.1134/s1063782617020257

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1083751214


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