Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K View Full Text


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Article Info

DATE

2017-02-10

AUTHORS

K. D. Mynbaev, N. L. Bazhenov, A. A. Semakova, M. P. Mikhailova, N. D. Stoyanov, S. S. Kizhaev, S. S. Molchanov, A. P. Astakhova, A. V. Chernyaev, H. Lipsanen, V. E. Bougrov

ABSTRACT

The electroluminescence of InAs/InAsSbP and InAsSb/InAsSbP LED heterostructures grown on InAs substrates is studied in the temperature range T = 4.2–300 K. At low temperatures (T = 4.2–100 K), stimulated emission is observed for the InAs/InAsSbP and InAsSb/InAsSbP heterostructures with an optical cavity formed normal to the growth plane at wavelengths of, respectively, 3.03 and 3.55 μm. The emission becomes spontaneous at T > 70 K due to the resonant “switch-on” of the CHHS Auger recombination process in which the energy of a recombining electron–hole pair is transferred to a hole, with hole transition to the spin–orbit-split band. It remains spontaneous up to room temperature because of the influence exerted by other Auger processes. The results obtained show that InAs/InAs(Sb)/InAsSbP structures are promising for the fabrication of vertically emitting mid-IR lasers. More... »

PAGES

239-244

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782617020117

DOI

http://dx.doi.org/10.1134/s1063782617020117

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1083749374


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