Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2017-02

AUTHORS

N. V. Kryzhanovskaya, Yu. S. Polubavkina, V. N. Nevedomskiy, E. V. Nikitina, A. A. Lazarenko, A. Yu. Egorov, M. V. Maximov, E. I. Moiseev, A. E. Zhukov

ABSTRACT

The structural and optical properties of GaP and GaPN layers synthesized by molecular-beam epitaxy on Si(100) substrates misoriented by 4° are studied. The possibility of producing GaP buffer layers that exhibit a high degree of heterointerface planarity and an outcropping dislocation density of no higher than ~2 × 108 cm–2 is shown. Emission from the Si/GaP/GaPN structure in the spectral range of 630–640 nm at room temperature is observed. Annealing during growth of the Si/GaP/GaPN structure makes it possible to enhance the room-temperature photoluminescence intensity by a factor of 2.6, with no shift of the maximum of the emission line. More... »

PAGES

267-271

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782617020087

DOI

http://dx.doi.org/10.1134/s1063782617020087

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1083756715


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