InGaN/GaN light-emitting diode microwires of submillimeter length View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2017-01

AUTHORS

W. V. Lundin, S. N. Rodin, A. V. Sakharov, E. Yu. Lundina, S. O. Usov, Yu. M. Zadiranov, S. I. Troshkov, A. F. Tsatsulnikov

ABSTRACT

Microcrystalline wire-like InGaN/GaN light-emitting diodes designed as core–shell structures 400–600 μm in length are grown by metal–organic vapor-phase epitaxy on sapphire and silicon substrates. The technology of the titanium-nanolayer-induced ultrafast growth of nanowire and microwire crystals is used. As a current is passed through the microcrystals, an electroluminescence signal is observed in the blue–green spectral region. More... »

PAGES

100-103

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782617010122

DOI

http://dx.doi.org/10.1134/s1063782617010122

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1083746422


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