Ontology type: schema:ScholarlyArticle
2016-12
AUTHORSI. V. Shtrom, A. D. Bouravleuv, Yu. B. Samsonenko, A. I. Khrebtov, I. P. Soshnikov, R. R. Reznik, G. E. Cirlin, V. Dhaka, A. Perros, H. Lipsanen
ABSTRACTIt is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence measurements shows that the photoluminescence-signal intensity can be increased by a factor of up to five by passivating the nanowires with a 25-Å-thick AlN layer. More... »
PAGES1619-1621
http://scigraph.springernature.com/pub.10.1134/s1063782616120186
DOIhttp://dx.doi.org/10.1134/s1063782616120186
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