Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2016-11

AUTHORS

A. N. Kosarev, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

ABSTRACT

The photoluminescence of InAs semiconductor quantum dots overgrown by GaAs in the low-temperature mode (LT-GaAs) using various spacer layers or without them is studied. Spacer layers are thin GaAs or AlAs layers grown at temperatures normal for molecular-beam epitaxy (MBE). Direct overgrowth leads to photoluminescence disappearance. When using a thin GaAs spacer layer, the photoluminescence from InAs quantum dots is partially recovered; however, its intensity appears lower by two orders of magnitude than in the reference sample in which the quantum-dot array is overgrown at normal temperature. The use of wider-gap AlAs as a spacer-layer material leads to the enhancement of photoluminescence from InAs quantum dots, but it is still more than ten times lower than that of reference-sample emission. A model taking into account carrier generation by light, diffusion and tunneling from quantum dots to the LT-GaAs layer is constructed. More... »

PAGES

1499-1505

Journal

TITLE

Semiconductors

ISSUE

11

VOLUME

50

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782616110154

DOI

http://dx.doi.org/10.1134/s1063782616110154

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1051765201


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