effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the ... View Full Text


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Article Info

DATE

2016-10-11

AUTHORS

A. F. Tsatsulnikov, V. W. Lundin, E. E. Zavarin, M. A. Yagovkina, A. V. Sakharov, S. O. Usov, V. E. Zemlyakov, V. I. Egorkin, K. A. Bulashevich, S. Yu. Karpov, V. M. Ustinov

ABSTRACT

The effect of the layer thickness and composition in AlGaN/AlN/GaN and InAlN/AlN/GaN transistor heterostructures with a two-dimensional electron gas on their electrical and the static parameters of test transistors fabricated from such heterostructures are experimentally and theoretically studied. It is shown that the use of an InAlN barrier layer instead of AlGaN results in a more than twofold increase in the carrier concentration in the channel, which leads to a corresponding increase in the saturation current. In situ dielectric-coating deposition on the InAlN/AlN/GaN heterostructure surface during growth process allows an increase in the maximum saturation current and breakdown voltages while retaining high transconductance. More... »

PAGES

1383-1389

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782616100237

DOI

http://dx.doi.org/10.1134/s1063782616100237

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1006472615


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
            "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tsatsulnikov", 
        "givenName": "A. F.", 
        "id": "sg:person.015475065541.13", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015475065541.13"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lundin", 
        "givenName": "V. W.", 
        "id": "sg:person.014407423647.66", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014407423647.66"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zavarin", 
        "givenName": "E. E.", 
        "id": "sg:person.015451372144.61", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015451372144.61"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Yagovkina", 
        "givenName": "M. A.", 
        "id": "sg:person.016026355533.82", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016026355533.82"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sakharov", 
        "givenName": "A. V.", 
        "id": "sg:person.010201114167.20", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010201114167.20"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Saint-Petersburg State University of Information Technologies, Mechanics and Optics, ul. Sablinskaya 14, 197101, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.35915.3b", 
          "name": [
            "Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
            "Saint-Petersburg State University of Information Technologies, Mechanics and Optics, ul. Sablinskaya 14, 197101, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Usov", 
        "givenName": "S. O.", 
        "id": "sg:person.011162335741.78", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011162335741.78"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "National Research University of Electronic Technology (MIET), 4806 proezd 5, 124498, Zelenograd, Moscow oblast, Russia", 
          "id": "http://www.grid.ac/institutes/grid.436529.f", 
          "name": [
            "National Research University of Electronic Technology (MIET), 4806 proezd 5, 124498, Zelenograd, Moscow oblast, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zemlyakov", 
        "givenName": "V. E.", 
        "id": "sg:person.015574213725.02", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015574213725.02"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "National Research University of Electronic Technology (MIET), 4806 proezd 5, 124498, Zelenograd, Moscow oblast, Russia", 
          "id": "http://www.grid.ac/institutes/grid.436529.f", 
          "name": [
            "National Research University of Electronic Technology (MIET), 4806 proezd 5, 124498, Zelenograd, Moscow oblast, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Egorkin", 
        "givenName": "V. I.", 
        "id": "sg:person.013613345543.43", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013613345543.43"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "\u201cSoft-Impact\u201d Ltd., ul. Engelsa 27, korp. 12v, 194156, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "\u201cSoft-Impact\u201d Ltd., ul. Engelsa 27, korp. 12v, 194156, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Bulashevich", 
        "givenName": "K. A.", 
        "id": "sg:person.015336773365.62", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015336773365.62"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "\u201cSoft-Impact\u201d Ltd., ul. Engelsa 27, korp. 12v, 194156, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "\u201cSoft-Impact\u201d Ltd., ul. Engelsa 27, korp. 12v, 194156, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Karpov", 
        "givenName": "S. Yu.", 
        "id": "sg:person.010360535403.74", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010360535403.74"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.502986.0", 
          "name": [
            "Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ustinov", 
        "givenName": "V. M.", 
        "id": "sg:person.012211352412.34", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012211352412.34"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s1063782610070201", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1016453723", 
          "https://doi.org/10.1134/s1063782610070201"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063785015030116", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1002237782", 
          "https://doi.org/10.1134/s1063785015030116"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782616020263", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1031646426", 
          "https://doi.org/10.1134/s1063782616020263"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2016-10-11", 
    "datePublishedReg": "2016-10-11", 
    "description": "The effect of the layer thickness and composition in AlGaN/AlN/GaN and InAlN/AlN/GaN transistor heterostructures with a two-dimensional electron gas on their electrical and the static parameters of test transistors fabricated from such heterostructures are experimentally and theoretically studied. It is shown that the use of an InAlN barrier layer instead of AlGaN results in a more than twofold increase in the carrier concentration in the channel, which leads to a corresponding increase in the saturation current. In situ dielectric-coating deposition on the InAlN/AlN/GaN heterostructure surface during growth process allows an increase in the maximum saturation current and breakdown voltages while retaining high transconductance.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782616100237", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "10", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "50"
      }
    ], 
    "keywords": [
      "InAlN barrier layer", 
      "characteristics of transistors", 
      "two-dimensional electron gas", 
      "AlGaN/AlN/GaN", 
      "barrier layer", 
      "AlN/GaN", 
      "GaN/AlGaN", 
      "electrical properties", 
      "layer thickness", 
      "high transconductance", 
      "such heterostructures", 
      "GaN transistors", 
      "breakdown voltage", 
      "carrier concentration", 
      "maximum saturation", 
      "test transistors", 
      "transistors", 
      "electron gas", 
      "heterostructure surface", 
      "growth process", 
      "AlGaN", 
      "heterostructures", 
      "static parameters", 
      "gas", 
      "transconductance", 
      "layer", 
      "thickness", 
      "voltage", 
      "parameters", 
      "GaN", 
      "surface", 
      "deposition", 
      "properties", 
      "saturation", 
      "increase", 
      "characteristics", 
      "process", 
      "effect", 
      "corresponding increase", 
      "channels", 
      "composition", 
      "concentration", 
      "use", 
      "basis", 
      "twofold increase", 
      "InAlN/AlN/GaN transistor", 
      "AlN/GaN transistor", 
      "situ dielectric-coating deposition", 
      "dielectric-coating deposition", 
      "AlN/GaN heterostructure surface", 
      "GaN heterostructure surface", 
      "AlN/GaN/AlGaN", 
      "AlN/GaN/InAlN heterostructures", 
      "GaN/InAlN heterostructures", 
      "InAlN heterostructures"
    ], 
    "name": "effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis", 
    "pagination": "1383-1389", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1006472615"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782616100237"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782616100237", 
      "https://app.dimensions.ai/details/publication/pub.1006472615"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2021-12-01T19:35", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20211201/entities/gbq_results/article/article_699.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782616100237"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

213 TRIPLES      22 PREDICATES      84 URIs      72 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782616100237 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author N54552184e8844bd3a84f30b630239050
5 schema:citation sg:pub.10.1134/s1063782610070201
6 sg:pub.10.1134/s1063782616020263
7 sg:pub.10.1134/s1063785015030116
8 schema:datePublished 2016-10-11
9 schema:datePublishedReg 2016-10-11
10 schema:description The effect of the layer thickness and composition in AlGaN/AlN/GaN and InAlN/AlN/GaN transistor heterostructures with a two-dimensional electron gas on their electrical and the static parameters of test transistors fabricated from such heterostructures are experimentally and theoretically studied. It is shown that the use of an InAlN barrier layer instead of AlGaN results in a more than twofold increase in the carrier concentration in the channel, which leads to a corresponding increase in the saturation current. In situ dielectric-coating deposition on the InAlN/AlN/GaN heterostructure surface during growth process allows an increase in the maximum saturation current and breakdown voltages while retaining high transconductance.
11 schema:genre article
12 schema:inLanguage en
13 schema:isAccessibleForFree false
14 schema:isPartOf N930658a051f34cc2b82eb1eb555a5204
15 Nfa5ec2becb9c4f898447d48681811e67
16 sg:journal.1136692
17 schema:keywords AlGaN
18 AlGaN/AlN/GaN
19 AlN/GaN
20 AlN/GaN heterostructure surface
21 AlN/GaN transistor
22 AlN/GaN/AlGaN
23 AlN/GaN/InAlN heterostructures
24 GaN
25 GaN heterostructure surface
26 GaN transistors
27 GaN/AlGaN
28 GaN/InAlN heterostructures
29 InAlN barrier layer
30 InAlN heterostructures
31 InAlN/AlN/GaN transistor
32 barrier layer
33 basis
34 breakdown voltage
35 carrier concentration
36 channels
37 characteristics
38 characteristics of transistors
39 composition
40 concentration
41 corresponding increase
42 deposition
43 dielectric-coating deposition
44 effect
45 electrical properties
46 electron gas
47 gas
48 growth process
49 heterostructure surface
50 heterostructures
51 high transconductance
52 increase
53 layer
54 layer thickness
55 maximum saturation
56 parameters
57 process
58 properties
59 saturation
60 situ dielectric-coating deposition
61 static parameters
62 such heterostructures
63 surface
64 test transistors
65 thickness
66 transconductance
67 transistors
68 two-dimensional electron gas
69 twofold increase
70 use
71 voltage
72 schema:name effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
73 schema:pagination 1383-1389
74 schema:productId N71c71dd3b04540ce92069cb14a986133
75 Nf3fdcde3e7394520bc03212557a42457
76 schema:sameAs https://app.dimensions.ai/details/publication/pub.1006472615
77 https://doi.org/10.1134/s1063782616100237
78 schema:sdDatePublished 2021-12-01T19:35
79 schema:sdLicense https://scigraph.springernature.com/explorer/license/
80 schema:sdPublisher N3416764154ff4977ae943e1e1cba9660
81 schema:url https://doi.org/10.1134/s1063782616100237
82 sgo:license sg:explorer/license/
83 sgo:sdDataset articles
84 rdf:type schema:ScholarlyArticle
85 N19d57e01698e4bd296fdd0a1f8cf7b6a rdf:first sg:person.015574213725.02
86 rdf:rest Ndba713bae6a745a68f08e0ec0b8b0a83
87 N3416764154ff4977ae943e1e1cba9660 schema:name Springer Nature - SN SciGraph project
88 rdf:type schema:Organization
89 N347b6c29918d42b5add9a29a48c0f840 rdf:first sg:person.014407423647.66
90 rdf:rest Neeee2d3e9d244cde8701bc0bbeb8471f
91 N451a5c59e2f748519571e22c1c0b327d rdf:first sg:person.012211352412.34
92 rdf:rest rdf:nil
93 N501d4b10d6254a0db7da517538e327e8 rdf:first sg:person.010201114167.20
94 rdf:rest Ne183970b290444178ccd9a96d690ad65
95 N54552184e8844bd3a84f30b630239050 rdf:first sg:person.015475065541.13
96 rdf:rest N347b6c29918d42b5add9a29a48c0f840
97 N71c71dd3b04540ce92069cb14a986133 schema:name doi
98 schema:value 10.1134/s1063782616100237
99 rdf:type schema:PropertyValue
100 N930658a051f34cc2b82eb1eb555a5204 schema:issueNumber 10
101 rdf:type schema:PublicationIssue
102 Nc846631c28084edda8e89ebc8057116d rdf:first sg:person.016026355533.82
103 rdf:rest N501d4b10d6254a0db7da517538e327e8
104 Ndba713bae6a745a68f08e0ec0b8b0a83 rdf:first sg:person.013613345543.43
105 rdf:rest Ne37286053c7f4985ab15551bc28352ad
106 Ne183970b290444178ccd9a96d690ad65 rdf:first sg:person.011162335741.78
107 rdf:rest N19d57e01698e4bd296fdd0a1f8cf7b6a
108 Ne37286053c7f4985ab15551bc28352ad rdf:first sg:person.015336773365.62
109 rdf:rest Ne5d0b90ee39c4103a3097033d3ce1b34
110 Ne5d0b90ee39c4103a3097033d3ce1b34 rdf:first sg:person.010360535403.74
111 rdf:rest N451a5c59e2f748519571e22c1c0b327d
112 Neeee2d3e9d244cde8701bc0bbeb8471f rdf:first sg:person.015451372144.61
113 rdf:rest Nc846631c28084edda8e89ebc8057116d
114 Nf3fdcde3e7394520bc03212557a42457 schema:name dimensions_id
115 schema:value pub.1006472615
116 rdf:type schema:PropertyValue
117 Nfa5ec2becb9c4f898447d48681811e67 schema:volumeNumber 50
118 rdf:type schema:PublicationVolume
119 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
120 schema:name Physical Sciences
121 rdf:type schema:DefinedTerm
122 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
123 schema:name Condensed Matter Physics
124 rdf:type schema:DefinedTerm
125 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
126 schema:name Quantum Physics
127 rdf:type schema:DefinedTerm
128 sg:journal.1136692 schema:issn 1063-7826
129 1090-6479
130 schema:name Semiconductors
131 schema:publisher Pleiades Publishing
132 rdf:type schema:Periodical
133 sg:person.010201114167.20 schema:affiliation grid-institutes:grid.423485.c
134 schema:familyName Sakharov
135 schema:givenName A. V.
136 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010201114167.20
137 rdf:type schema:Person
138 sg:person.010360535403.74 schema:affiliation grid-institutes:None
139 schema:familyName Karpov
140 schema:givenName S. Yu.
141 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010360535403.74
142 rdf:type schema:Person
143 sg:person.011162335741.78 schema:affiliation grid-institutes:grid.35915.3b
144 schema:familyName Usov
145 schema:givenName S. O.
146 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011162335741.78
147 rdf:type schema:Person
148 sg:person.012211352412.34 schema:affiliation grid-institutes:grid.502986.0
149 schema:familyName Ustinov
150 schema:givenName V. M.
151 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012211352412.34
152 rdf:type schema:Person
153 sg:person.013613345543.43 schema:affiliation grid-institutes:grid.436529.f
154 schema:familyName Egorkin
155 schema:givenName V. I.
156 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013613345543.43
157 rdf:type schema:Person
158 sg:person.014407423647.66 schema:affiliation grid-institutes:grid.423485.c
159 schema:familyName Lundin
160 schema:givenName V. W.
161 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014407423647.66
162 rdf:type schema:Person
163 sg:person.015336773365.62 schema:affiliation grid-institutes:None
164 schema:familyName Bulashevich
165 schema:givenName K. A.
166 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015336773365.62
167 rdf:type schema:Person
168 sg:person.015451372144.61 schema:affiliation grid-institutes:grid.423485.c
169 schema:familyName Zavarin
170 schema:givenName E. E.
171 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015451372144.61
172 rdf:type schema:Person
173 sg:person.015475065541.13 schema:affiliation grid-institutes:grid.423485.c
174 schema:familyName Tsatsulnikov
175 schema:givenName A. F.
176 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015475065541.13
177 rdf:type schema:Person
178 sg:person.015574213725.02 schema:affiliation grid-institutes:grid.436529.f
179 schema:familyName Zemlyakov
180 schema:givenName V. E.
181 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015574213725.02
182 rdf:type schema:Person
183 sg:person.016026355533.82 schema:affiliation grid-institutes:grid.423485.c
184 schema:familyName Yagovkina
185 schema:givenName M. A.
186 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016026355533.82
187 rdf:type schema:Person
188 sg:pub.10.1134/s1063782610070201 schema:sameAs https://app.dimensions.ai/details/publication/pub.1016453723
189 https://doi.org/10.1134/s1063782610070201
190 rdf:type schema:CreativeWork
191 sg:pub.10.1134/s1063782616020263 schema:sameAs https://app.dimensions.ai/details/publication/pub.1031646426
192 https://doi.org/10.1134/s1063782616020263
193 rdf:type schema:CreativeWork
194 sg:pub.10.1134/s1063785015030116 schema:sameAs https://app.dimensions.ai/details/publication/pub.1002237782
195 https://doi.org/10.1134/s1063785015030116
196 rdf:type schema:CreativeWork
197 grid-institutes:None schema:alternateName “Soft-Impact” Ltd., ul. Engelsa 27, korp. 12v, 194156, St. Petersburg, Russia
198 schema:name “Soft-Impact” Ltd., ul. Engelsa 27, korp. 12v, 194156, St. Petersburg, Russia
199 rdf:type schema:Organization
200 grid-institutes:grid.35915.3b schema:alternateName Saint-Petersburg State University of Information Technologies, Mechanics and Optics, ul. Sablinskaya 14, 197101, St. Petersburg, Russia
201 schema:name Saint-Petersburg State University of Information Technologies, Mechanics and Optics, ul. Sablinskaya 14, 197101, St. Petersburg, Russia
202 Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia
203 rdf:type schema:Organization
204 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical–Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia
205 schema:name Ioffe Physical–Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia
206 Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia
207 rdf:type schema:Organization
208 grid-institutes:grid.436529.f schema:alternateName National Research University of Electronic Technology (MIET), 4806 proezd 5, 124498, Zelenograd, Moscow oblast, Russia
209 schema:name National Research University of Electronic Technology (MIET), 4806 proezd 5, 124498, Zelenograd, Moscow oblast, Russia
210 rdf:type schema:Organization
211 grid-institutes:grid.502986.0 schema:alternateName Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia
212 schema:name Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia
213 rdf:type schema:Organization
 




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