On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm View Full Text


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Article Info

DATE

2016-10-11

AUTHORS

I. I. Novikov, L. Ya. Karachinsky, E. S. Kolodeznyi, V. E. Bougrov, A. S. Kurochkin, A. G. Gladyshev, A. V. Babichev, I. M. Gadzhiev, M. S. Buyalo, Yu. M. Zadiranov, A. A. Usikova, Yu. M. Shernyakov, A. V. Savelyev, I. A. Nyapshaev, A. Yu. Egorov

ABSTRACT

The results of experimental studies of the gain properties of “thin” (3.2 nm thick) elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm are presented. The results of studying the threshold and gain characteristics of stripe laser diodes with active regions based on “thin” quantum wells with a lattice–substrate mismatch of +1.0% show that the quantum wells under study exhibit a high modal gain of 11 cm–1 and a low transparency current density of 46 A/cm2 per quantum well. More... »

PAGES

1412-1415

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782616100201

DOI

http://dx.doi.org/10.1134/s1063782616100201

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1017892330


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