Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs View Full Text


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Article Info

DATE

2016-09-16

AUTHORS

A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, M. A. Yagovkina, V. M. Ustinov, N. A. Cherkashin

ABSTRACT

The epitaxial growth of InAlN layers and GaN/AlN/InAlN heterostructures for HEMTs in growth systems with horizontal reactors of the sizes 1 × 2", 3 × 2", and 6 × 2" is investigated. Studies of the structural properties of the grown InAlN layers and electrophysical parameters of the GaN/AlN/InAlN heterostructures show that the optimal quality of epitaxial growth is attained upon a compromise between the growth conditions for InGaN and AlGaN. A comparison of the epitaxial growth in different reactors shows that optimal conditions are realized in small-scale reactors which make possible the suppression of parasitic reactions in the gas phase. In addition, the size of the reactor should be sufficient to provide highly homogeneous heterostructure parameters over area for the subsequent fabrication of devices. The optimal compositions and thicknesses of the InAlN layer for attaining the highest conductance in GaN/AlN/InAlN transistor heterostructures. More... »

PAGES

1241-1247

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782616090232

DOI

http://dx.doi.org/10.1134/s1063782616090232

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https://app.dimensions.ai/details/publication/pub.1032897544


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