Electron-diffraction study of graphene-film growth stages during the thermal destruction of 6H-SiC (000) in vacuum View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2016-07-06

AUTHORS

I. S. Kotousova, S. P. Lebedev, A. A. Lebedev

ABSTRACT

The structure of graphene layers grown by sublimation on a 6H-SiC (000\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\bar 1$$\end{document}) substrate surface is studied by electron diffraction depending on the sublimation temperature and substrate-surface pretreatment method. It is shown that the use of polishing sublimation etching of the substrate before thermal destruction at a temperature of 1350°C on the substrate surface results in the formation of single-crystal graphene domains with graphene-lattice rotation by 30° with respect to the SiC lattice and a small fraction of amorphous domains. An increase in the temperature to 1500°C leads to the partial formation of a polycrystalline graphene phase with turbostratic structure while retaining the preferred orientation of graphene crystallites as at 1350°C. The use of pregrowth annealing before thermal destruction makes it possible to grow a graphene film with a more ordered and homogeneous structure without inclusions of amorphous and polycrystalline components. The preferred orientation of graphene domains in the film remains unchanged. More... »

PAGES

951-956

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782616070083

DOI

http://dx.doi.org/10.1134/s1063782616070083

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1023024848


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