Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2016-07-06

AUTHORS

P. A. Ivanov, A. S. Potapov, T. P. Samsonova, I. V. Grekhov

ABSTRACT

The forward current–voltage characteristics of mesa-epitaxial 4H-SiC Schottky diodes are measured in high electric fields (up to 4 × 105 V/cm) in the n-type base region. A semi-empirical formula for the field dependence of the electron drift velocity in 4H-SiC along the hexagonal axis of the crystal is derived. It is shown that the saturated drift velocity is (1.55 ± 0.05) × 107 cm/s in electric fields higher than 2 × 105 V/cm. More... »

PAGES

883-887

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s106378261607006x

DOI

http://dx.doi.org/10.1134/s106378261607006x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1026837611


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