Ontology type: schema:ScholarlyArticle
2016-07-06
AUTHORSP. A. Ivanov, A. S. Potapov, T. P. Samsonova, I. V. Grekhov
ABSTRACTThe forward current–voltage characteristics of mesa-epitaxial 4H-SiC Schottky diodes are measured in high electric fields (up to 4 × 105 V/cm) in the n-type base region. A semi-empirical formula for the field dependence of the electron drift velocity in 4H-SiC along the hexagonal axis of the crystal is derived. It is shown that the saturated drift velocity is (1.55 ± 0.05) × 107 cm/s in electric fields higher than 2 × 105 V/cm. More... »
PAGES883-887
http://scigraph.springernature.com/pub.10.1134/s106378261607006x
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