Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example of p-Ge:Ga) View Full Text


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Article Info

DATE

2016-06-17

AUTHORS

N. A. Poklonski, S. A. Vyrko, O. N. Poklonskaya, A. G. Zabrodskii

ABSTRACT

The electrostatic model of ionization equilibrium between hydrogen-like acceptors and v-band holes in crystalline covalent p-type semiconductors is developed. The range of applicability of the model is the entire insulator side of the insulator–metal (Mott) phase transition. The density of the spatial distribution of acceptor- and donor-impurity atoms and holes over a crystal was assumed to be Poissonian and the fluctuations of their electrostatic potential energy, to be Gaussian. The model takes into account the effect of a decrease in the energy of affinity of an ionized acceptor to a v-band hole due to Debye–Hückel ion screening by both free v-band holes and localized holes hopping over charge states (0) and (–1) of acceptors in the acceptor band. All donors are in charge state (+1) and are not directly involved in the screening, but ensure the total electroneutrality of a sample. In the quasiclassical approximation, analytical expressions for the root-mean-square fluctuation of the v-band hole energy Wp and effective acceptor bandwidth Wa are obtained. In calculating Wa, only fluctuations caused by the Coulomb interaction between two nearest point charges (impurity ions and holes) are taken into account. It is shown that Wp is lower than Wa, since electrostatic fluctuations do not manifest themselves on scales smaller than the average de Broglie wavelength of a free hole. The delocalization threshold for v-band holes is determined as the sum of the diffusive-percolation threshold and exchange energy of holes. The concentration of free v-band holes is calculated at the temperature Tj of the transition from dc band conductivity to conductivity implemented via hopping over acceptor states, which is determined from the virial theorem. The dependence of the differential energy of the thermal ionization of acceptors at the temperature 3Tj/2 on their concentration N and degree of compensation K (the ratio between the donor and acceptor concentrations) is determined. Good quantitative agreement between the results of the calculation and data on the series of neutron transmutation doped p-Ge samples is obtained up to the Mott transition without using any fitting parameters. More... »

PAGES

722-734

References to SciGraph publications

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  • 2002-07. Nonlinear screening of the field of a dopant ion on the metal side of the Mott phase transition in semiconductors in PHYSICS OF THE SOLID STATE
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  • 2005-03. Electron capture by charged impurities in semiconductors under conditions of spatial diffusion in PHYSICS OF THE SOLID STATE
  • 2002-05. Electrostatic Model of Edge Luminescence of Heavily Doped Degenerate Semiconductors in JOURNAL OF APPLIED SPECTROSCOPY
  • 2004-03. Determination of gallium concentration in germanium doped using neutron-induced nuclear transmutation from measurements of resistivity in the region of hopping conductivity in SEMICONDUCTORS
  • 1984. Electronic Properties of Doped Semiconductors in NONE
  • 1999-04. A model of how the thermal ionization energy of impurities in semiconductors depends on their concentration and compensation in SEMICONDUCTORS
  • 2000-02. A model of hopping and band DC photoconduction in doped crystals in PHYSICS OF THE SOLID STATE
  • 2009. Quantum and Semi-classical Percolation and Breakdown in Disordered Solids in NONE
  • 2004-06. Electrostatic models of insulator-metal and metal-insulator concentration phase transitions in Ge and Si crystals doped by hydrogen-like impurities in PHYSICS OF THE SOLID STATE
  • 1999-05. Neutron transmutation doping in semiconductors: Science and applications in PHYSICS OF THE SOLID STATE
  • 2000-04. Electron localization in a nondegenerate semiconductor with a random potential due to charged impurities in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2011-10-07. Specific features of the anisotropy of low-temperature microwave magnetoresistivity of lightly doped p-Ge due to the presence of light and heavy holes in SEMICONDUCTORS
  • 1980-02. The low-frequency, low-temperature dielectric behavior of n-type germanium below the insulator-metal transition in JOURNAL OF LOW TEMPERATURE PHYSICS
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