Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs0.92Sb0.08/n+-InAs heterostructure View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2016-05-15

AUTHORS

N. D. Il’inskaya, S. A. Karandashev, N. G. Karpukhina, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus, A. A. Usikova

ABSTRACT

The results of studies of the current–voltage characteristics and of the photoelectric and luminescence properties of a monolithic diode 1 × 64 linear array based on p-InAsSbP/n-InAsSb/n+-InAs with the n+-InAs-substrate side illuminated and sensitive in the region of 4-μm are reported. An analysis is performed of the mechanisms of current flow in the temperature range of 77–353 K and also of the photosensitivity and the speed of response taking into account the spatial distribution of nonequilibrium radiation and the data of capacitance–voltage measurements. More... »

PAGES

646-651

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782616050122

DOI

http://dx.doi.org/10.1134/s1063782616050122

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1005075019


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