Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2016-02-19

AUTHORS

V. G. Tikhomirov, V. E. Zemlyakov, V. V. Volkov, Ya. M. Parnes, V. N. Vyuginov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, A. F. Tsatsulnikov, N. A. Cherkashin, M. N. Mizerov, V. M. Ustinov

ABSTRACT

The numerical simulation, and theoretical and experimental optimization of field-effect microwave high-electron-mobility transistors (HEMTs) based on GaN/AlN/AlGaN heterostructures are performed. The results of the study showed that the optimal thicknesses and compositions of the heterostructure layers, allowing high microwave power implementation, are in relatively narrow ranges. It is shown that numerical simulation can be efficiently applied to the development of microwave HEMTs, taking into account basic physical phenomena and features of actual device structures. More... »

PAGES

244-248

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782616020263

DOI

http://dx.doi.org/10.1134/s1063782616020263

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1031646426


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Joint Stock Company \u201cSvetlana-Electronpribor\u201d, pr. Engelsa 27, korp. 164, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Saint Petersburg Electrotechnical University \u201cLETI\u201d, ul. Prof. Popova 5, 197376, St. Petersburg, Russia", 
            "Joint Stock Company \u201cSvetlana-Electronpribor\u201d, pr. Engelsa 27, korp. 164, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tikhomirov", 
        "givenName": "V. G.", 
        "id": "sg:person.010421414251.74", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010421414251.74"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "National Research University of Electronic Technology (MIET), 4806 proezd 5, 124498, Zelenograd, Moscow oblast, Russia", 
          "id": "http://www.grid.ac/institutes/grid.436529.f", 
          "name": [
            "Joint Stock Company \u201cSvetlana-Electronpribor\u201d, pr. Engelsa 27, korp. 164, 194021, St. Petersburg, Russia", 
            "National Research University of Electronic Technology (MIET), 4806 proezd 5, 124498, Zelenograd, Moscow oblast, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zemlyakov", 
        "givenName": "V. E.", 
        "id": "sg:person.015574213725.02", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015574213725.02"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Joint Stock Company \u201cSvetlana-Electronpribor\u201d, pr. Engelsa 27, korp. 164, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Joint Stock Company \u201cSvetlana-Electronpribor\u201d, pr. Engelsa 27, korp. 164, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Volkov", 
        "givenName": "V. V.", 
        "id": "sg:person.010535760655.05", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010535760655.05"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Joint Stock Company \u201cSvetlana-Electronpribor\u201d, pr. Engelsa 27, korp. 164, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Joint Stock Company \u201cSvetlana-Electronpribor\u201d, pr. Engelsa 27, korp. 164, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Parnes", 
        "givenName": "Ya. M.", 
        "id": "sg:person.015766160555.17", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015766160555.17"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Joint Stock Company \u201cSvetlana-Electronpribor\u201d, pr. Engelsa 27, korp. 164, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Joint Stock Company \u201cSvetlana-Electronpribor\u201d, pr. Engelsa 27, korp. 164, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Vyuginov", 
        "givenName": "V. N.", 
        "id": "sg:person.012333451633.23", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012333451633.23"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
            "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lundin", 
        "givenName": "W. V.", 
        "id": "sg:person.013543521751.29", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013543521751.29"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
            "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sakharov", 
        "givenName": "A. V.", 
        "id": "sg:person.010201114167.20", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010201114167.20"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
            "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zavarin", 
        "givenName": "E. E.", 
        "id": "sg:person.015451372144.61", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015451372144.61"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
            "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tsatsulnikov", 
        "givenName": "A. F.", 
        "id": "sg:person.015475065541.13", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015475065541.13"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "CEMES-CNRS-Universit\u00e9 de Toulouse, 29 Rue Jeanne Marvig, 31055, Toulouse, France", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "CEMES-CNRS-Universit\u00e9 de Toulouse, 29 Rue Jeanne Marvig, 31055, Toulouse, France"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Cherkashin", 
        "givenName": "N. A.", 
        "id": "sg:person.01236734145.04", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01236734145.04"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.502986.0", 
          "name": [
            "Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mizerov", 
        "givenName": "M. N.", 
        "id": "sg:person.012152105512.69", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012152105512.69"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ustinov", 
        "givenName": "V. M.", 
        "id": "sg:person.012211352412.34", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012211352412.34"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s1063785015030116", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1002237782", 
          "https://doi.org/10.1134/s1063785015030116"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782611100216", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1030270115", 
          "https://doi.org/10.1134/s1063782611100216"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2016-02-19", 
    "datePublishedReg": "2016-02-19", 
    "description": "The numerical simulation, and theoretical and experimental optimization of field-effect microwave high-electron-mobility transistors (HEMTs) based on GaN/AlN/AlGaN heterostructures are performed. The results of the study showed that the optimal thicknesses and compositions of the heterostructure layers, allowing high microwave power implementation, are in relatively narrow ranges. It is shown that numerical simulation can be efficiently applied to the development of microwave HEMTs, taking into account basic physical phenomena and features of actual device structures.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782616020263", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "2", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "50"
      }
    ], 
    "keywords": [
      "numerical simulations", 
      "AlGaN heterostructures", 
      "actual device structures", 
      "basic physical phenomena", 
      "device structure", 
      "optimal thickness", 
      "mobility transistors", 
      "heterostructure layers", 
      "experimental optimization", 
      "microwave transistors", 
      "physical phenomena", 
      "heterostructures", 
      "transistors", 
      "simulations", 
      "power implementation", 
      "optimization", 
      "HEMTs", 
      "layer", 
      "thickness", 
      "narrow range", 
      "parameters", 
      "structure", 
      "phenomenon", 
      "range", 
      "composition", 
      "results", 
      "implementation", 
      "features", 
      "development", 
      "study", 
      "GaN/AlN/AlGaN heterostructures", 
      "AlN/AlGaN heterostructures", 
      "high microwave power implementation", 
      "microwave power implementation", 
      "microwave HEMTs", 
      "account basic physical phenomena", 
      "HEMT GaN/AlN/AlGaN heterostructures"
    ], 
    "name": "Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation", 
    "pagination": "244-248", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1031646426"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782616020263"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782616020263", 
      "https://app.dimensions.ai/details/publication/pub.1031646426"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2021-12-01T19:34", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20211201/entities/gbq_results/article/article_684.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782616020263"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

198 TRIPLES      22 PREDICATES      65 URIs      54 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782616020263 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author N05a8ef1640de490d8530cf943bd41254
5 schema:citation sg:pub.10.1134/s1063782611100216
6 sg:pub.10.1134/s1063785015030116
7 schema:datePublished 2016-02-19
8 schema:datePublishedReg 2016-02-19
9 schema:description The numerical simulation, and theoretical and experimental optimization of field-effect microwave high-electron-mobility transistors (HEMTs) based on GaN/AlN/AlGaN heterostructures are performed. The results of the study showed that the optimal thicknesses and compositions of the heterostructure layers, allowing high microwave power implementation, are in relatively narrow ranges. It is shown that numerical simulation can be efficiently applied to the development of microwave HEMTs, taking into account basic physical phenomena and features of actual device structures.
10 schema:genre article
11 schema:inLanguage en
12 schema:isAccessibleForFree false
13 schema:isPartOf N483b2dbec43a431891e67a311ff01b41
14 Na2f36542e8094b5c8ebf6b9331c3fa01
15 sg:journal.1136692
16 schema:keywords AlGaN heterostructures
17 AlN/AlGaN heterostructures
18 GaN/AlN/AlGaN heterostructures
19 HEMT GaN/AlN/AlGaN heterostructures
20 HEMTs
21 account basic physical phenomena
22 actual device structures
23 basic physical phenomena
24 composition
25 development
26 device structure
27 experimental optimization
28 features
29 heterostructure layers
30 heterostructures
31 high microwave power implementation
32 implementation
33 layer
34 microwave HEMTs
35 microwave power implementation
36 microwave transistors
37 mobility transistors
38 narrow range
39 numerical simulations
40 optimal thickness
41 optimization
42 parameters
43 phenomenon
44 physical phenomena
45 power implementation
46 range
47 results
48 simulations
49 structure
50 study
51 thickness
52 transistors
53 schema:name Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
54 schema:pagination 244-248
55 schema:productId N2d2b56f76f9547049c9d294a64fe3d58
56 Nd0107ee4d10e43e5b4283597834e935b
57 schema:sameAs https://app.dimensions.ai/details/publication/pub.1031646426
58 https://doi.org/10.1134/s1063782616020263
59 schema:sdDatePublished 2021-12-01T19:34
60 schema:sdLicense https://scigraph.springernature.com/explorer/license/
61 schema:sdPublisher Nef93a2b21c8a43599171b166a7efd85b
62 schema:url https://doi.org/10.1134/s1063782616020263
63 sgo:license sg:explorer/license/
64 sgo:sdDataset articles
65 rdf:type schema:ScholarlyArticle
66 N02f23ce44cd64e3880912e5efea64fae rdf:first sg:person.012333451633.23
67 rdf:rest Ncfdbefb10bc748af96eff2a0992fd1fd
68 N03b4e55ab1f648a88c5798f9b64e06f9 rdf:first sg:person.015766160555.17
69 rdf:rest N02f23ce44cd64e3880912e5efea64fae
70 N05a8ef1640de490d8530cf943bd41254 rdf:first sg:person.010421414251.74
71 rdf:rest Nd81f5a46fe7e48b99297774f5a144f2e
72 N0d4400fbd5d94418a9835752f6f1b535 rdf:first sg:person.015475065541.13
73 rdf:rest N3f8cf71a05da4be48d5622ea4e299c91
74 N2d2b56f76f9547049c9d294a64fe3d58 schema:name dimensions_id
75 schema:value pub.1031646426
76 rdf:type schema:PropertyValue
77 N3f8cf71a05da4be48d5622ea4e299c91 rdf:first sg:person.01236734145.04
78 rdf:rest Nbc963dfd7bb747ddae278a449e1a8d0a
79 N483b2dbec43a431891e67a311ff01b41 schema:volumeNumber 50
80 rdf:type schema:PublicationVolume
81 N6b62d30bc17844e894e9eb00e5ae3515 rdf:first sg:person.012211352412.34
82 rdf:rest rdf:nil
83 N7a99d6b550224573b78010bf20906f0f rdf:first sg:person.010535760655.05
84 rdf:rest N03b4e55ab1f648a88c5798f9b64e06f9
85 N9fc5485044cb4cde8ecdc82144e7ad92 rdf:first sg:person.015451372144.61
86 rdf:rest N0d4400fbd5d94418a9835752f6f1b535
87 Na2f36542e8094b5c8ebf6b9331c3fa01 schema:issueNumber 2
88 rdf:type schema:PublicationIssue
89 Nbc963dfd7bb747ddae278a449e1a8d0a rdf:first sg:person.012152105512.69
90 rdf:rest N6b62d30bc17844e894e9eb00e5ae3515
91 Ncfdbefb10bc748af96eff2a0992fd1fd rdf:first sg:person.013543521751.29
92 rdf:rest Nf27c640736d74e5c9978f0b0ba103421
93 Nd0107ee4d10e43e5b4283597834e935b schema:name doi
94 schema:value 10.1134/s1063782616020263
95 rdf:type schema:PropertyValue
96 Nd81f5a46fe7e48b99297774f5a144f2e rdf:first sg:person.015574213725.02
97 rdf:rest N7a99d6b550224573b78010bf20906f0f
98 Nef93a2b21c8a43599171b166a7efd85b schema:name Springer Nature - SN SciGraph project
99 rdf:type schema:Organization
100 Nf27c640736d74e5c9978f0b0ba103421 rdf:first sg:person.010201114167.20
101 rdf:rest N9fc5485044cb4cde8ecdc82144e7ad92
102 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
103 schema:name Physical Sciences
104 rdf:type schema:DefinedTerm
105 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
106 schema:name Condensed Matter Physics
107 rdf:type schema:DefinedTerm
108 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
109 schema:name Quantum Physics
110 rdf:type schema:DefinedTerm
111 sg:journal.1136692 schema:issn 1063-7826
112 1090-6479
113 schema:name Semiconductors
114 schema:publisher Pleiades Publishing
115 rdf:type schema:Periodical
116 sg:person.010201114167.20 schema:affiliation grid-institutes:grid.423485.c
117 schema:familyName Sakharov
118 schema:givenName A. V.
119 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010201114167.20
120 rdf:type schema:Person
121 sg:person.010421414251.74 schema:affiliation grid-institutes:None
122 schema:familyName Tikhomirov
123 schema:givenName V. G.
124 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010421414251.74
125 rdf:type schema:Person
126 sg:person.010535760655.05 schema:affiliation grid-institutes:None
127 schema:familyName Volkov
128 schema:givenName V. V.
129 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010535760655.05
130 rdf:type schema:Person
131 sg:person.012152105512.69 schema:affiliation grid-institutes:grid.502986.0
132 schema:familyName Mizerov
133 schema:givenName M. N.
134 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012152105512.69
135 rdf:type schema:Person
136 sg:person.012211352412.34 schema:affiliation grid-institutes:grid.423485.c
137 schema:familyName Ustinov
138 schema:givenName V. M.
139 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012211352412.34
140 rdf:type schema:Person
141 sg:person.012333451633.23 schema:affiliation grid-institutes:None
142 schema:familyName Vyuginov
143 schema:givenName V. N.
144 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012333451633.23
145 rdf:type schema:Person
146 sg:person.01236734145.04 schema:affiliation grid-institutes:None
147 schema:familyName Cherkashin
148 schema:givenName N. A.
149 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01236734145.04
150 rdf:type schema:Person
151 sg:person.013543521751.29 schema:affiliation grid-institutes:grid.423485.c
152 schema:familyName Lundin
153 schema:givenName W. V.
154 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013543521751.29
155 rdf:type schema:Person
156 sg:person.015451372144.61 schema:affiliation grid-institutes:grid.423485.c
157 schema:familyName Zavarin
158 schema:givenName E. E.
159 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015451372144.61
160 rdf:type schema:Person
161 sg:person.015475065541.13 schema:affiliation grid-institutes:grid.423485.c
162 schema:familyName Tsatsulnikov
163 schema:givenName A. F.
164 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015475065541.13
165 rdf:type schema:Person
166 sg:person.015574213725.02 schema:affiliation grid-institutes:grid.436529.f
167 schema:familyName Zemlyakov
168 schema:givenName V. E.
169 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015574213725.02
170 rdf:type schema:Person
171 sg:person.015766160555.17 schema:affiliation grid-institutes:None
172 schema:familyName Parnes
173 schema:givenName Ya. M.
174 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015766160555.17
175 rdf:type schema:Person
176 sg:pub.10.1134/s1063782611100216 schema:sameAs https://app.dimensions.ai/details/publication/pub.1030270115
177 https://doi.org/10.1134/s1063782611100216
178 rdf:type schema:CreativeWork
179 sg:pub.10.1134/s1063785015030116 schema:sameAs https://app.dimensions.ai/details/publication/pub.1002237782
180 https://doi.org/10.1134/s1063785015030116
181 rdf:type schema:CreativeWork
182 grid-institutes:None schema:alternateName CEMES-CNRS-Université de Toulouse, 29 Rue Jeanne Marvig, 31055, Toulouse, France
183 Joint Stock Company “Svetlana-Electronpribor”, pr. Engelsa 27, korp. 164, 194021, St. Petersburg, Russia
184 schema:name CEMES-CNRS-Université de Toulouse, 29 Rue Jeanne Marvig, 31055, Toulouse, France
185 Joint Stock Company “Svetlana-Electronpribor”, pr. Engelsa 27, korp. 164, 194021, St. Petersburg, Russia
186 Saint Petersburg Electrotechnical University “LETI”, ul. Prof. Popova 5, 197376, St. Petersburg, Russia
187 rdf:type schema:Organization
188 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical–Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia
189 schema:name Ioffe Physical–Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia
190 Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia
191 rdf:type schema:Organization
192 grid-institutes:grid.436529.f schema:alternateName National Research University of Electronic Technology (MIET), 4806 proezd 5, 124498, Zelenograd, Moscow oblast, Russia
193 schema:name Joint Stock Company “Svetlana-Electronpribor”, pr. Engelsa 27, korp. 164, 194021, St. Petersburg, Russia
194 National Research University of Electronic Technology (MIET), 4806 proezd 5, 124498, Zelenograd, Moscow oblast, Russia
195 rdf:type schema:Organization
196 grid-institutes:grid.502986.0 schema:alternateName Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia
197 schema:name Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia
198 rdf:type schema:Organization
 




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