Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates View Full Text


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Article Info

DATE

2016-02-19

AUTHORS

K. D. Mynbaev, S. V. Zablotsky, A. V. Shilyaev, N. L. Bazhenov, M. V. Yakushev, D. V. Marin, V. S. Varavin, S. A. Dvoretsky

ABSTRACT

Defects in mercury-cadmium-telluride heteroepitaxial structures (with 0.3 to 0.4 molar fraction of cadmium telluride) grown by molecular-beam epitaxy on silicon substrates are studied. The low-temperature photoluminescence method reveals that there are comparatively deep levels with energies of 50 to 60 meV and shallower levels with energies of 20 to 30 meV in the band gap. Analysis of the temperature dependence of the minority carrier lifetime demonstrates that this lifetime is controlled by energy levels with an energy of ∼30 meV. The possible relationship between energy states and crystal-structure defects is discussed. More... »

PAGES

208-211

References to SciGraph publications

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  • 1998-06. Measurement of minority carrier lifetime in n-type MBE HgCdTe and its dependence on annealing in JOURNAL OF ELECTRONIC MATERIALS
  • 2015-03-04. Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy in SEMICONDUCTORS
  • 2012-10-10. Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates in SEMICONDUCTORS
  • 2014-06-12. CdHgTe heterostructures on large-area Si(310) substrates for infrared photodetector arrays of the short-wavelength spectral range in SEMICONDUCTORS
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  • 1995-05. Minority carrier lifetime in indium-doped HgCdTe(211)B epitaxial layers grown by molecular beam epitaxy in JOURNAL OF ELECTRONIC MATERIALS
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    http://scigraph.springernature.com/pub.10.1134/s1063782616020160

    DOI

    http://dx.doi.org/10.1134/s1063782616020160

    DIMENSIONS

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