Effect of transverse electric field and temperature on light absorption in GaAs/AlGaAs tunnel-coupled quantum wells View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2015-11-04

AUTHORS

D. A. Firsov, L. E. Vorobjev, M. Ya. Vinnichenko, R. M. Balagula, M. M. Kulagina, A. P. Vasil’iev

ABSTRACT

The photoluminescence and intersubband absorption spectra are studied in GaAs/AlGaAs tunnel- coupled quantum well structures. The peak positions in the photoluminescence and absorption spectra are consistent with the theoretically calculated energies of optical carrier transitions. The effect of a transverse electric field and temperature on intersubband light absorption is studied. It is caused by electron redistribution between the size-quantization levels and a variation in the energy spectrum of quantum wells. The variation in the refractive index in the energy region of observed intersubband transitions is estimated using Kramers–Kronig relations. More... »

PAGES

1425-1429

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782615110081

DOI

http://dx.doi.org/10.1134/s1063782615110081

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1025330490


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