Radiation hardness of n-GaN schottky diodes View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2015-10-13

AUTHORS

A. A. Lebedev, S. V. Belov, M. G. Mynbaeva, A. M. Strel’chuk, E. V. Bogdanova, Yu. N. Makarov, A. S. Usikov, S. Yu. Kurin, I. S. Barash, A. D. Roenkov, V. V. Kozlovski

ABSTRACT

Schottky-barrier diodes with a diameter of ~10 µm are fabricated on n-GaN epitaxial films grown by hydride vapor-phase epitaxy (HVPE) on sapphire substrates. The changes in the parameters of the diodes under irradiation with 15 MeV protons are studied. The carrier removal rate was found to be 130–145 cm–1. The linear nature of the dependence N = f(D) (N is the carrier concentration, and D, the irradiation dose) shows that compensation of the material is associated with transitions of electrons from shallow donors to deep acceptor levels which are related to primary radiation defects. More... »

PAGES

1341-1343

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782615100127

DOI

http://dx.doi.org/10.1134/s1063782615100127

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1041392856


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "ITMO University, 197101, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.35915.3b", 
          "name": [
            "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "ITMO University, 197101, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lebedev", 
        "givenName": "A. A.", 
        "id": "sg:person.011264364575.18", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011264364575.18"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Belov", 
        "givenName": "S. V.", 
        "id": "sg:person.012506501113.24", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012506501113.24"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mynbaeva", 
        "givenName": "M. G.", 
        "id": "sg:person.07660667737.36", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07660667737.36"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Strel\u2019chuk", 
        "givenName": "A. M.", 
        "id": "sg:person.015012127015.53", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015012127015.53"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Bogdanova", 
        "givenName": "E. V.", 
        "id": "sg:person.012556446371.01", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012556446371.01"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Nitride Crystals Group, 194156, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Nitride Crystals Group, 194156, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Makarov", 
        "givenName": "Yu. N.", 
        "id": "sg:person.016110745037.19", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016110745037.19"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "ITMO University, 197101, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.35915.3b", 
          "name": [
            "Nitride Crystals Inc., 11729, Washington D.C., NY, USA", 
            "ITMO University, 197101, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Usikov", 
        "givenName": "A. S.", 
        "id": "sg:person.010242465455.19", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010242465455.19"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Nitride Crystals Group, 194156, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Nitride Crystals Group, 194156, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kurin", 
        "givenName": "S. Yu.", 
        "id": "sg:person.015604073572.38", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015604073572.38"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Nitride Crystals Group, 194156, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Nitride Crystals Group, 194156, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Barash", 
        "givenName": "I. S.", 
        "id": "sg:person.015155046377.64", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015155046377.64"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Nitride Crystals Group, 194156, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Nitride Crystals Group, 194156, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Roenkov", 
        "givenName": "A. D.", 
        "id": "sg:person.014367662606.29", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014367662606.29"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg State Polytechnic University, 195251, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.32495.39", 
          "name": [
            "St. Petersburg State Polytechnic University, 195251, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kozlovski", 
        "givenName": "V. V.", 
        "id": "sg:person.011730241573.99", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011730241573.99"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s1027451014050103", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1048356847", 
          "https://doi.org/10.1134/s1027451014050103"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782614020262", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1004427459", 
          "https://doi.org/10.1134/s1063782614020262"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/1.1808825", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1027899446", 
          "https://doi.org/10.1134/1.1808825"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2015-10-13", 
    "datePublishedReg": "2015-10-13", 
    "description": "Schottky-barrier diodes with a diameter of ~10 \u00b5m are fabricated on n-GaN epitaxial films grown by hydride vapor-phase epitaxy (HVPE) on sapphire substrates. The changes in the parameters of the diodes under irradiation with 15 MeV protons are studied. The carrier removal rate was found to be 130\u2013145 cm\u20131. The linear nature of the dependence N = f(D) (N is the carrier concentration, and D, the irradiation dose) shows that compensation of the material is associated with transitions of electrons from shallow donors to deep acceptor levels which are related to primary radiation defects.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782615100127", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "10", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "49"
      }
    ], 
    "keywords": [
      "donors", 
      "levels", 
      "defects", 
      "rate", 
      "changes", 
      "irradiation", 
      "diameter", 
      "hydride vapor-phase epitaxy", 
      "materials", 
      "parameters", 
      "nature", 
      "Schottky-barrier diodes", 
      "vapor-phase epitaxy", 
      "compensation", 
      "epitaxial films", 
      "removal rate", 
      "GaN epitaxial films", 
      "sapphire substrates", 
      "GaN Schottky", 
      "carrier removal rate", 
      "substrate", 
      "radiation hardness", 
      "deep acceptor level", 
      "diodes", 
      "transition", 
      "radiation defects", 
      "linear nature", 
      "dependence n", 
      "primary radiation defects", 
      "hardness", 
      "transition of electrons", 
      "films", 
      "Schottky", 
      "MeV protons", 
      "shallow donors", 
      "epitaxy", 
      "acceptor level", 
      "electrons", 
      "protons", 
      "cm-1"
    ], 
    "name": "Radiation hardness of n-GaN schottky diodes", 
    "pagination": "1341-1343", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1041392856"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782615100127"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782615100127", 
      "https://app.dimensions.ai/details/publication/pub.1041392856"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-01-01T18:36", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220101/entities/gbq_results/article/article_653.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782615100127"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782615100127'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782615100127'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782615100127'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782615100127'


 

This table displays all metadata directly associated to this object as RDF triples.

195 TRIPLES      22 PREDICATES      69 URIs      57 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782615100127 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author Na1f83e6894c74f12aee006c41d6f27fc
5 schema:citation sg:pub.10.1134/1.1808825
6 sg:pub.10.1134/s1027451014050103
7 sg:pub.10.1134/s1063782614020262
8 schema:datePublished 2015-10-13
9 schema:datePublishedReg 2015-10-13
10 schema:description Schottky-barrier diodes with a diameter of ~10 µm are fabricated on n-GaN epitaxial films grown by hydride vapor-phase epitaxy (HVPE) on sapphire substrates. The changes in the parameters of the diodes under irradiation with 15 MeV protons are studied. The carrier removal rate was found to be 130–145 cm–1. The linear nature of the dependence N = f(D) (N is the carrier concentration, and D, the irradiation dose) shows that compensation of the material is associated with transitions of electrons from shallow donors to deep acceptor levels which are related to primary radiation defects.
11 schema:genre article
12 schema:inLanguage en
13 schema:isAccessibleForFree false
14 schema:isPartOf N739d5c0cf28d4a1aa1551110203d5e72
15 N9e6ad37b0f254b649c1af946272c077a
16 sg:journal.1136692
17 schema:keywords GaN Schottky
18 GaN epitaxial films
19 MeV protons
20 Schottky
21 Schottky-barrier diodes
22 acceptor level
23 carrier removal rate
24 changes
25 cm-1
26 compensation
27 deep acceptor level
28 defects
29 dependence n
30 diameter
31 diodes
32 donors
33 electrons
34 epitaxial films
35 epitaxy
36 films
37 hardness
38 hydride vapor-phase epitaxy
39 irradiation
40 levels
41 linear nature
42 materials
43 nature
44 parameters
45 primary radiation defects
46 protons
47 radiation defects
48 radiation hardness
49 rate
50 removal rate
51 sapphire substrates
52 shallow donors
53 substrate
54 transition
55 transition of electrons
56 vapor-phase epitaxy
57 schema:name Radiation hardness of n-GaN schottky diodes
58 schema:pagination 1341-1343
59 schema:productId N1efa7d28521b4cbb833a70c84af8da73
60 Nbdc3e9025a8a4a3a87766ffd9354215a
61 schema:sameAs https://app.dimensions.ai/details/publication/pub.1041392856
62 https://doi.org/10.1134/s1063782615100127
63 schema:sdDatePublished 2022-01-01T18:36
64 schema:sdLicense https://scigraph.springernature.com/explorer/license/
65 schema:sdPublisher Nae7415e7f8344a77b5023e7af9588d5f
66 schema:url https://doi.org/10.1134/s1063782615100127
67 sgo:license sg:explorer/license/
68 sgo:sdDataset articles
69 rdf:type schema:ScholarlyArticle
70 N1efa7d28521b4cbb833a70c84af8da73 schema:name doi
71 schema:value 10.1134/s1063782615100127
72 rdf:type schema:PropertyValue
73 N3d9b25cc8b9f42cf840686eeffdc4c8b rdf:first sg:person.012556446371.01
74 rdf:rest Nd955246c1c3d4b70b6e6ca8fb215fdc7
75 N503e2a9de0f44430b566b042254e40ac rdf:first sg:person.015155046377.64
76 rdf:rest N65c89b242d824edf81d0cad61620293e
77 N65c89b242d824edf81d0cad61620293e rdf:first sg:person.014367662606.29
78 rdf:rest N9f4e920c81a24f0f8c25820c3b522280
79 N666491338f434ad5b6e399c77ac732f5 rdf:first sg:person.07660667737.36
80 rdf:rest Ndeb5a6a089b34c80b2a11daad1a24555
81 N739d5c0cf28d4a1aa1551110203d5e72 schema:volumeNumber 49
82 rdf:type schema:PublicationVolume
83 N981c432048f445b9888836413374919d rdf:first sg:person.015604073572.38
84 rdf:rest N503e2a9de0f44430b566b042254e40ac
85 N9a35f28cf91044e8a2f0de7266d87e97 rdf:first sg:person.012506501113.24
86 rdf:rest N666491338f434ad5b6e399c77ac732f5
87 N9e6ad37b0f254b649c1af946272c077a schema:issueNumber 10
88 rdf:type schema:PublicationIssue
89 N9f4e920c81a24f0f8c25820c3b522280 rdf:first sg:person.011730241573.99
90 rdf:rest rdf:nil
91 Na1f83e6894c74f12aee006c41d6f27fc rdf:first sg:person.011264364575.18
92 rdf:rest N9a35f28cf91044e8a2f0de7266d87e97
93 Nae7415e7f8344a77b5023e7af9588d5f schema:name Springer Nature - SN SciGraph project
94 rdf:type schema:Organization
95 Nbdc3e9025a8a4a3a87766ffd9354215a schema:name dimensions_id
96 schema:value pub.1041392856
97 rdf:type schema:PropertyValue
98 Nd955246c1c3d4b70b6e6ca8fb215fdc7 rdf:first sg:person.016110745037.19
99 rdf:rest Nf3241eaed17349e1b12323bc75528c6a
100 Ndeb5a6a089b34c80b2a11daad1a24555 rdf:first sg:person.015012127015.53
101 rdf:rest N3d9b25cc8b9f42cf840686eeffdc4c8b
102 Nf3241eaed17349e1b12323bc75528c6a rdf:first sg:person.010242465455.19
103 rdf:rest N981c432048f445b9888836413374919d
104 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
105 schema:name Physical Sciences
106 rdf:type schema:DefinedTerm
107 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
108 schema:name Condensed Matter Physics
109 rdf:type schema:DefinedTerm
110 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
111 schema:name Quantum Physics
112 rdf:type schema:DefinedTerm
113 sg:journal.1136692 schema:issn 1063-7826
114 1090-6479
115 schema:name Semiconductors
116 schema:publisher Pleiades Publishing
117 rdf:type schema:Periodical
118 sg:person.010242465455.19 schema:affiliation grid-institutes:grid.35915.3b
119 schema:familyName Usikov
120 schema:givenName A. S.
121 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010242465455.19
122 rdf:type schema:Person
123 sg:person.011264364575.18 schema:affiliation grid-institutes:grid.35915.3b
124 schema:familyName Lebedev
125 schema:givenName A. A.
126 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011264364575.18
127 rdf:type schema:Person
128 sg:person.011730241573.99 schema:affiliation grid-institutes:grid.32495.39
129 schema:familyName Kozlovski
130 schema:givenName V. V.
131 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011730241573.99
132 rdf:type schema:Person
133 sg:person.012506501113.24 schema:affiliation grid-institutes:grid.423485.c
134 schema:familyName Belov
135 schema:givenName S. V.
136 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012506501113.24
137 rdf:type schema:Person
138 sg:person.012556446371.01 schema:affiliation grid-institutes:grid.423485.c
139 schema:familyName Bogdanova
140 schema:givenName E. V.
141 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012556446371.01
142 rdf:type schema:Person
143 sg:person.014367662606.29 schema:affiliation grid-institutes:None
144 schema:familyName Roenkov
145 schema:givenName A. D.
146 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014367662606.29
147 rdf:type schema:Person
148 sg:person.015012127015.53 schema:affiliation grid-institutes:grid.423485.c
149 schema:familyName Strel’chuk
150 schema:givenName A. M.
151 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015012127015.53
152 rdf:type schema:Person
153 sg:person.015155046377.64 schema:affiliation grid-institutes:None
154 schema:familyName Barash
155 schema:givenName I. S.
156 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015155046377.64
157 rdf:type schema:Person
158 sg:person.015604073572.38 schema:affiliation grid-institutes:None
159 schema:familyName Kurin
160 schema:givenName S. Yu.
161 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015604073572.38
162 rdf:type schema:Person
163 sg:person.016110745037.19 schema:affiliation grid-institutes:None
164 schema:familyName Makarov
165 schema:givenName Yu. N.
166 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016110745037.19
167 rdf:type schema:Person
168 sg:person.07660667737.36 schema:affiliation grid-institutes:grid.423485.c
169 schema:familyName Mynbaeva
170 schema:givenName M. G.
171 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07660667737.36
172 rdf:type schema:Person
173 sg:pub.10.1134/1.1808825 schema:sameAs https://app.dimensions.ai/details/publication/pub.1027899446
174 https://doi.org/10.1134/1.1808825
175 rdf:type schema:CreativeWork
176 sg:pub.10.1134/s1027451014050103 schema:sameAs https://app.dimensions.ai/details/publication/pub.1048356847
177 https://doi.org/10.1134/s1027451014050103
178 rdf:type schema:CreativeWork
179 sg:pub.10.1134/s1063782614020262 schema:sameAs https://app.dimensions.ai/details/publication/pub.1004427459
180 https://doi.org/10.1134/s1063782614020262
181 rdf:type schema:CreativeWork
182 grid-institutes:None schema:alternateName Nitride Crystals Group, 194156, St. Petersburg, Russia
183 schema:name Nitride Crystals Group, 194156, St. Petersburg, Russia
184 rdf:type schema:Organization
185 grid-institutes:grid.32495.39 schema:alternateName St. Petersburg State Polytechnic University, 195251, St. Petersburg, Russia
186 schema:name St. Petersburg State Polytechnic University, 195251, St. Petersburg, Russia
187 rdf:type schema:Organization
188 grid-institutes:grid.35915.3b schema:alternateName ITMO University, 197101, St. Petersburg, Russia
189 schema:name ITMO University, 197101, St. Petersburg, Russia
190 Ioffe Physical–Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
191 Nitride Crystals Inc., 11729, Washington D.C., NY, USA
192 rdf:type schema:Organization
193 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical–Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
194 schema:name Ioffe Physical–Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
195 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...