Metamorphic distributed Bragg reflectors for the 1440–1600 nm spectral range: Epitaxy, formation, and regrowth of mesa structures View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2015-10

AUTHORS

A. Yu. Egorov, L. Ya. Karachinsky, I. I. Novikov, A. V. Babichev, T. N. Berezovskaya, V. N. Nevedomskiy

ABSTRACT

It is shown that metamorphic In0.3Ga0.7As/In0.3Al0.7As distributed Bragg reflectors (DBRs) with a reflection band at 1440–1600 nm and a reflectance of no less than 0.999 can be fabricated by molecular beam epitaxy (MBE) on a GaAs substrate. It is demonstrated that mesa structures formed from metamorphic DBRs on a GaAs substrate can be regrown by MBE and microcavities can be locally formed in two separate epitaxial processes. The results obtained can find wide application in the fabrication of vertical-cavity surface-emitting lasers (VCSELs) with a buried tunnel junction. More... »

PAGES

1388-1392

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782615100073

DOI

http://dx.doi.org/10.1134/s1063782615100073

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1039812799


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